Abstract: A method for producing an optoelectronic device is provided, in which a luminescent diode chip (10) is mounted on a base surface (8) on the first terminal area (1) of a carrier (3). An electrically insulating layer (4) is applied to side faces (17) of the luminescent diode chip (10). An electrically conductive layer (5), which leads from a second terminal contact (12) of the luminescent diode chip (10) over the electrically insulating layer (4) to a second terminal area (2) on the carrier (3), is subsequently applied. A photoresist layer (7) is applied to the electrically conductive layer (5), which photoresist layer (7) is exposed by application of an electrical voltage to the luminescent diode chip (10) so that the luminescent diode chip (10) emits radiation (23). After development of the photoresist layer (7), a portion of the electrically conductive layer (5) arranged on the radiation exit surface (9) is removed by means of an etching process, in which the photoresist layer (7) serves as a mask.

Abstract: A method for manufacturing an optoelectronic semiconductor component, comprising: providing a semiconductor chip in a composite wafer, comprising an active side for emitting a primary radiation and a contact terminal which is arranged on the active side; depositing a coupling element on the active side; attaching a luminescence conversion element, for converting part of the primary radiation into a secondary radiation, to the coupling element.

Abstract: A method for manufacturing an optoelectronic semiconductor component, comprising: providing a semiconductor chip in a composite wafer, comprising an active side for emitting a primary radiation and a contact terminal which is arranged on the active side; depositing a coupling element on the active side; attaching a luminescence conversion element, for converting part of the primary radiation into a secondary radiation, to the coupling element.

Abstract: A method of producing a light-emitting diode includes providing at least one light-emitting diode chip, providing a suspension comprising a solvent and particles of at least one luminescent material, arranging the at least one light-emitting diode chip in the suspension, electrophoretically depositing the particles on an outer face of the at least one light-emitting diode chip, and completing the light-emitting diode.

Abstract: A method for producing an optoelectronic device is provided, in which a luminescent diode chip (10) is mounted on a base surface (8) on the first terminal area (1) of a carrier (3). An electrically insulating layer (4) is applied to side faces (17) of the luminescent diode chip (10). An electrically conductive layer (5), which leads from a second terminal contact (12) of the luminescent diode chip (10) over the electrically insulating layer (4) to a second terminal area (2) on the carrier (3), is subsequently applied. A photoresist layer (7) is applied to the electrically conductive layer (5), which photoresist layer (7) is exposed by application of an electrical voltage to the luminescent diode chip (10) so that the luminescent diode chip (10) emits radiation (23). After development of the photoresist layer (7), a portion of the electrically conductive layer (5) arranged on the radiation exit surface (9) is removed by means of an etching process, in which the photoresist layer (7) serves as a mask.

Abstract: A method of producing a component including providing a carrier having a top, an underside, and at least one connection area, applying an optoelectronic component to the top, wherein the optoelectronic component has a contact area facing away from the carrier, applying insulating material to the contact and connection areas, wherein the insulating material is free of foreign particles, applying an insulating layer to exposed places of the insulating material, optoelectronic component and carrier, wherein the insulating layer includes foreign particles in a predefinable concentration, removing the insulating layer in a region above the contact and/or connection areas, to produce openings, removing the insulating material in a region above the contact and connection areas, thereby producing at least two openings in the insulating material, and arranging conductive material on the insulating layer and at least in places in the openings, wherein conductive material conductively connects the contact and connection

Abstract: A housing body for an optoelectronic component comprises a main surface having a first area region and a second area region. The first area region and the second area region form a step in the main surface. The first area region and the second area region adjoin one another by means of an outer edge. The second area region and the outer edge enclose the first area region.

Abstract: A method for manufacturing at least one optoelectronic semiconductor device includes providing a substrate and applying a number of optoelectronic semiconductor chips, which are arranged spaced apart from one another in a lateral direction, on an upper face of the substrate. At least one reflective coating is applied to the exposed areas of the substrate and the lateral surfaces of the optoelectronic semiconductor chips. Openings are introduced into the reflective coating, which completely penetrate the reflective coating. Electrically conductive material is arranged on the reflective coating and at least on some parts of the openings. Radiation penetration surfaces of the optoelectronic semiconductor chips are free of the reflective coating and the reflective coating does not laterally extend beyond the optoelectronic semiconductor chips.

Abstract: A method for producing a plurality of radiation-emitting semiconductor components (10) is specified, said components each comprising at least one semiconductor chip (1) and a converter lamina (2). For this purpose, this method involves providing a plurality of semiconductor chips (1) in the wafer assembly (10a), said semiconductor chips each being suitable for emitting a primary radiation. Moreover, a plurality of converter laminae (2) are provided on a common carrier (2a), said converter laminae each being suitable for converting the primary radiation into a secondary radiation, wherein a converter lamina (2) is in each case mounted on one semiconductor chip (1) or onto a plurality of semiconductor chips (1) by means of an automated method.

Abstract: A method of producing a silicone foil for use in an optoelectronic semiconductor component by molding including introducing a mold foil into a mold, introducing a carrier foil into the mold, wherein the carrier foil is fitted on a substrate foil and the substrate foil projects laterally beyond the carrier foil at least in places within a cavity of the mold, providing and applying a silicone base composition to the mold foil or to the carrier foil, molding the silicone base composition for the silicone foil in the mold between the mold foil and the carrier foil, wherein the silicone base composition is brought into contact with the substrate foil in at least one overlap region laterally alongside the carrier foil, removing the mold foil from the silicone foil, and separating the overlap region.

Abstract: An optoelectronic semiconductor component includes a carrier and at least one optoelectronic semiconductor chip mounted on the carrier top. The semiconductor component includes at least one bonding wire, via which the semiconductor chip is electrically contacted, and at least one covering body mounted on a main radiation side and projects beyond the bonding wire. At least one reflective potting compound encloses the semiconductor chip laterally and extends at least as far as the main radiation side of the semiconductor chip. The bonding wire is covered completely by the reflective potting compound or completely by the reflective potting compound together with the covering body.

Abstract: An optoelectronic component comprising an optoelectronic semiconductor chip (104) having a contact side (106) and a radiation coupling-out side (108) situated opposite; a chip carrier (102), on which the semiconductor chip (104) is applied via its contact side (106); a radiation conversion element (110) applied on the radiation coupling-out side (108); and a reflective potting compound (112), which is applied on the chip carrier (102) and laterally encloses the semiconductor chip (104) and the radiation conversion element (110); wherein the potting compound (112) adjoins an upper edge of the radiation conversion element (110) in a substantially flush fashion, such that a top side of the radiation conversion element (110) is free of the potting compound (112).

Abstract: A method for manufacturing an optoelectronic semiconductor component, comprising: providing a semiconductor chip in a composite wafer, comprising an active side for emitting a primary radiation and a contact terminal which is arranged on the active side; depositing a coupling element on the active side; attaching a luminescence conversion element, for converting part of the primary radiation into a secondary radiation, to the coupling element.

Abstract: A housing body for an optoelectronic component comprises a main surface having a first area region and a second area region. The first area region and the second area region form a step in the main surface. The first area region and the second area region adjoin one another by means of an outer edge. The second area region and the outer edge enclose the first area region.