Abstract: The invention relates to a laser diode including a vertical resonator and to a method for producing the laser diode such that at least one active layer is configured between reflective layers. The invention is characterized by configuring at least one antioxidation layer between the reflective layers, thus preventing distortion caused by unintentional oxidation. The antioxidation layer consists of a III–V semiconductor material with a proportion of a molar aluminum of less than 0.7 and/or a III–V semiconductor material with an optical depth of at least two quarter waves.

Abstract: A laser device has a laser diode with an optical resonator. The resonator has an exit side for emitting light into an optical system. A monitor diode is provided and has a light-sensitive face for measuring optical quantities of the laser diode. The light-sensitive face of the monitor diode is optically coupled to a backside of the laser diode, on the other side from the light exit side of the resonator, the backside also emitting light. This configuration permits a space-saving SMD layout for the laser device.

Abstract: A VCSEL has an active layer, a photodetector in one of the DBR gratings and with a radiation-absorbing layer that is arranged in an antinode of a laser mode. The laser and the photodetector are electrically driven by a common contact on a thick, heavily doped spacer layer that ensures low laser impedance and little electrical crosstalk between the laser and the photodetector.

Abstract: The invention relates to a laser diode including a vertical resonator and to a method for producing the laser diode such that at least one active layer is configured between reflective layers. The invention is characterized by configuring at least one antioxidation layer between the reflective layers, thus preventing distortion caused by unintentional oxidation. The antioxidation layer consists of a III-V semiconductor material with a proportion of a molar aluminum of less than 0.7 and/or a III-V semiconductor material with an optical depth of at least two quarter waves.

Abstract: A laser device has a laser diode with an optical resonator. The resonator has an exit side for emitting light into an optical system. A monitor diode is provided and has a light-sensitive face for measuring optical quantities of the laser diode. The light-sensitive face of the monitor diode is optically coupled to a backside of the laser diode, on the other side from the light exit side of the resonator, the backside also emitting light. This configuration permits a space-saving SMD layout for the laser device.

Abstract: A VCSEL has an active layer, a photodetector in one of the DBR gratings and with a radiation-absorbing layer that is arranged in an antinode of a laser mode. The laser and the photodetector are electrically driven by a common contact on a thick, heavily doped spacer layer that ensures low laser impedance and little electrical crosstalk between the laser and the photodetector.