Abstract: A method for controlling a power converter, which in particular has partial power converters connected in parallel, is provided. The method includes determining a nominal voltage for the power converter; and dividing an output voltage for the power converter into a number of, in particular equal, voltage ranges. The voltage ranges are limited by a discrete upper voltage limit and a discrete lower voltage limit and the voltage ranges can be adjusted by switching the power converter, in particular the partial power converters. The method includes allocating the nominal voltage a voltage range with a discrete upper and lower voltage limits; allocating a first switch setting to the lower voltage limit; allocating a second switch setting to the upper voltage limit; and switching between the first switch setting and the second switch setting so that the power converter generates an actual voltage corresponding to the nominal voltage.

Abstract: In an example, a semiconductor device includes an insulated gate transistor cell, a first region (e.g., a drain region and/or a drift region), a cathode region, a second region (e.g., an anode region and/or a separation region), and a source electrode. The insulated gate transistor cell includes a source region and a gate electrode. The source region and the cathode region are in a silicon carbide body. The gate electrode and the cathode region are electrically connected. The cathode region, the source region, and the first region have a first conductivity type. The second region has a second conductivity type and is between the cathode region and the first region. The source electrode and the source region are electrically connected. The source electrode and the second region are in contact with each other. A rectifying junction is electrically coupled between the source electrode and the cathode region.

Abstract: A method for generating at least one AC voltage using at least one inverter device is provided. The inverter device in each case includes comprises at least one voltage input for applying an input voltage, at least one voltage output for outputting an output voltage and at least one DC voltage intermediate circuit for providing an intermediate circuit voltage. The method includes controlling an AC voltage at the voltage output so as to output a first portion of an input power in the form of useful power, or to receive the input power or a portion thereof, and changing a system voltage of the inverter device such that at least one compensation current flows through at least one load resistor, in order thereby to output a second portion of the input power or the entire input power to the at least one load resistor in the form of excess power.

Abstract: A method for controlling a power converter, which in particular has partial power converters connected in parallel, is provided. The method includes determining a nominal voltage for the power converter; and dividing an output voltage for the power converter into a number of, in particular equal, voltage ranges. The voltage ranges are limited by a discrete upper voltage limit and a discrete lower voltage limit and the voltage ranges can be adjusted by switching the power converter, in particular the partial power converters. The method includes allocating the nominal voltage a voltage range with a discrete upper and lower voltage limits; allocating a first switch setting to the lower voltage limit; allocating a second switch setting to the upper voltage limit; and switching between the first switch setting and the second switch setting so that the power converter generates an actual voltage corresponding to the nominal voltage.

Abstract: In an example, a semiconductor device includes an insulated gate transistor cell, a first region (e.g., a drain region and/or a drift region), a cathode region, a second region (e.g., an anode region and/or a separation region), and a source electrode. The insulated gate transistor cell includes a source region and a gate electrode. The source region and the cathode region are in a silicon carbide body. The gate electrode and the cathode region are electrically connected. The cathode region, the source region, and the first region have a first conductivity type. The second region has a second conductivity type and is between the cathode region and the first region. The source electrode and the source region are electrically connected. The source electrode and the second region are in contact with each other. A rectifying junction is electrically coupled between the source electrode and the cathode region.

Abstract: A power semiconductor device includes a semiconductor body, a first load terminal structure arranged at a front side of the semiconductor body, and a second load terminal structure arranged at a back side of the semiconductor body, and configured for controlling a load current between the load terminal structures by means of at least one transistor cell. The at least one transistor cell is at least partially included in the semiconductor body and electrically connected to the first load terminal structure on one side and to a drift region on the other side, the drift region being of a first conductivity type. The semiconductor body further includes: a transistor short region of the first conductivity type, wherein a transition between the transistor short region and the first load terminal structure forms a Schottky contact; and a separation region of a second conductivity type separating the transistor short and drift regions.

Abstract: A power module for a converter, in particular for a multilevel converter. The power module includes a link circuit capacitor, two connection terminals, at least one half-bridge connected in parallel with the link circuit capacitor and having two semiconductor switches, and, for each half-bridge, a bypass diode connected in parallel with a first semiconductor switch of the half-bridge and a load-relief circuit group connected in parallel with the first semiconductor switch. The load-relief circuit group has a load-relief thyristor and a load-relief diode connected in series with the load-relief thyristor.

Abstract: A power module for a converter, in particular for a multilevel converter. The power module includes a link circuit capacitor, two connection terminals, at least one half-bridge connected in parallel with the link circuit capacitor and having two semiconductor switches, and, for each half-bridge, a bypass diode connected in parallel with a first semiconductor switch of the half-bridge and a load-relief circuit group connected in parallel with the first semiconductor switch. The load-relief circuit group has a load-relief thyristor and a load-relief diode connected in series with the load-relief thyristor.

Abstract: In accordance with an embodiment, at least one switching circuit includes a voltage clamping element, and a half-bridge with a high-side switch and a low side-switch, wherein the high-side switch and the low-side switch each comprise a control node and a load path, and wherein the load paths of the high-side switch and the low side switch are connected in series. The voltage clamping element is connected in parallel with the half-bridge such that a first overall inductance of first conductors connecting the high-side switch and the low-side switch and connecting the voltage clamping element with the half-bridge is less than 20 nH.

Abstract: A semiconductor device includes a first transistor structure including a first transistor body region of a first conductivity type located within a semiconductor substrate. At least part of the first transistor body region is located between a first source/drain region of the first transistor structure and a second source/drain region of the first transistor structure. The semiconductor device includes a second transistor structure including a second transistor body region of a second conductivity type located within the semiconductor substrate. At least part of the second transistor body region is located between a first source/drain region of the second transistor structure and a second source/drain region of the second transistor structure. At least part of the second source/drain region of the second transistor structure is located between a doping region comprising the second source/drain region of the first transistor structure and the second transistor body region.

Abstract: An apparatus switches a direct current in a high-voltage line. The apparatus contains a multiplicity of switching units, which are arranged so as to form a series circuit in the high-voltage line. Each switching unit in this case contains a switching element and a surge arrester arranged in a parallel circuit with the switching element, the threshold voltage of the surge arrester being higher than a rated voltage of the switching element. A sum of the rated voltages of the switching elements corresponds at least to an operating voltage of the high-voltage line. The switching elements are mechanical switches, and each mechanical switch contains a contact arrangement having two disconnectable contact pieces and is configured to build up an arcing voltage on disconnection of the contact pieces with a magnitude which is higher than the rated voltage of the mechanical switch.

Abstract: A power semiconductor device includes a semiconductor body, a first load terminal structure arranged at a front side of the semiconductor body, and a second load terminal structure arranged at a back side of the semiconductor body, and configured for controlling a load current between the load terminal structures by means of at least one transistor cell. The at least one transistor cell is at least partially included in the semiconductor body and electrically connected to the first load terminal structure on one side and to a drift region on the other side, the drift region being of a first conductivity type. The semiconductor body further includes: a transistor short region of the first conductivity type, wherein a transition between the transistor short region and the first load terminal structure forms a Schottky contact; and a separation region of a second conductivity type separating the transistor short and drift regions.

Abstract: In accordance with an embodiment, at least one switching circuit includes a voltage clamping element, and a half-bridge with a high-side switch and a low side-switch, wherein the high-side switch and the low-side switch each comprise a control node and a load path, and wherein the load paths of the high-side switch and the low side switch are connected in series. The voltage clamping element is connected in parallel with the half-bridge such that a first overall inductance of first conductors connecting the high-side switch and the low-side switch and connecting the voltage clamping element with the half-bridge is less than 20 nH.

Abstract: A multilevel converter has a central device for controlling operations and a plurality of series-connected sub modules that each has a first switch, a second switch, and a capacitor. At least two of the sub modules form a multi module, wherein, in charging phases and in discharging phases of the multi module, one of the switches of each sub module is switched off and the other switch of each sub module is switched on. The multi module has a control device that is connected to the central device and undertakes control of the sub modules of the multi module on the basis of control signals from the central device. The control device is configured such that it monitors the capacitor voltages of the sub modules and, in the event of an imbalance in the capacitor voltages, brings about balancing.

Abstract: The invention relates to a active-neutral point clamped converter having at least one half-bridge circuit connected into a DC voltage circuit. Each half-bridge circuit has a high-potential-side input half-bridge and a low-potential-side input half-bridge in series. The half-bridge circuit further has an output half-bridge connected between center taps of the input half-bridges. The total inductance within the output half-bridges and between the three half-bridges is dimensioned such that if any of the power semiconductors of the half-bridge circuit fails, a short-circuit can be reliably disconnected via a shorted circuit formed between the three half-bridges of the half-bridge circuit by the intact power semiconductors in said shorted circuit.

Abstract: A multilevel converter has a plurality of series-connected sub modules, which each have at least one first switch, one second switch and one capacitor. Current is output by way of the capacitor during discharging phases and current is received or charging the capacitor during charging phases. At least one of the sub modules has two part-modules that are galvanically connected to each other or are formed by two part-modules that are galvanically connected to each other. Each has a first switch, a second switch and a capacitor, and a first and a second part-module terminal. The galvanic connection between the two part-modules includes at least one inductive element.

Abstract: An intermediate voltage circuit current converter having two current converter sections arranged in series on the direct voltage side is disclosed. The current converter section has a capacitor connected in parallel with two bridge modules that are connected in series with each other. The output of the current converter section is located on the series connection between the two bridge modules and the outputs of the two current converter sections are connected to a further bridge module. Each bridge modules comprises a series connection of two power semiconductor units. The intermediate potentials on the connection between the two power semiconductor units in each of the bridge modules are electrically connected to one another by a further capacitor, and the intermediate potential of the further bridge module provides the phase connection of the intermediate voltage circuit current converter for a given phase of the intermediate voltage circuit current converter.

Abstract: A device for load flow control of a direct current in a branch of a direct current voltage network node having a longitudinal voltage source which has a coupling device for connection or disconnection of electrical power. The coupling device for connection and disconnection of electrical power are connected to a coupling device for connection and disconnection of electric power of a further load flow control device which is disposed in another branch of the same direct current voltage network node. Thus the device can be used economically and flexibly for control of a load flow on or in a network node.

Abstract: A power plant contains an internal AC voltage grid, electrical energy generation units which are connected to the internal AC voltage grid, and a HVDC transmission device, which is connected to the internal AC voltage grid, is connectable to an external AC voltage grid via a DC link and enables energy transmission from the internal AC voltage grid in the direction of the external AC voltage grid. The energy generation units feed their power into the internal AC voltage grid via a power electronics converter. The energy generation units each have a synchronization device, which is suitable for regulating the generation of the output voltage of the respective energy generation unit such that the phase angle of the output voltage has a setpoint phase angle, which is preset to the respective energy generation unit, with respect to a synchronization signal applied on the input side.

Abstract: An apparatus switches a direct current in a high-voltage line. The apparatus contains a multiplicity of switching units, which are arranged so as to form a series circuit in the high-voltage line. Each switching unit in this case contains a switching element and a surge arrester arranged in a parallel circuit with the switching element, the threshold voltage of the surge arrester being higher than a rated voltage of the switching element. A sum of the rated voltages of the switching elements corresponds at least to an operating voltage of the high-voltage line. The switching elements are mechanical switches, and each mechanical switch contains a contact arrangement having two disconnectable contact pieces and is configured to build up an arcing voltage on disconnection of the contact pieces with a magnitude which is higher than the rated voltage of the mechanical switch.