Patents by Inventor Hans G. Sippach

Hans G. Sippach has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4724326
    Abstract: An apparatus for determining the fluorescence of materials in a scene which includes optical means to collect radiation from the scene. Means are provided to divide the collected radiation into first and second beam paths. The first beam path traverses a first filter centered on a Fraunhofer line and having a passband which extends into the solar continuum on either side of the Fraunhofer line. The second beam path traverses the first filter and a second filter, also centered on the Fraunhofer line, with a passband on the order of half the bandwidth, at half-depth, of the Fraunhofer line. Means are provided to image the first and second beams onto first and second detector arrays, respectively. The image on the first detector array is registered with the image on the second detector array. Co-adding means are provided whereby successive detector pixels at successive time intervals corresponding to a single point on the ground are added and averaged.
    Type: Grant
    Filed: June 5, 1986
    Date of Patent: February 9, 1988
    Assignee: The Perkin-Elmer Corporation
    Inventors: Sherman K. Poultney, Hans G. Sippach, Joseph H. Oberheuser
  • Patent number: 4004148
    Abstract: The present invention relates to an accumulation mode charge injection device utilizing the extrinsic photoconductivity of a doped semiconductor material to sense infrared radiation. The device is operated at cryostatic temperatures to preclude thermal ionization of the impurity sites and majority carriers are produced by IR photons interacting with these sites. The device utilizes a metal-oxide-semiconductor structure to accumulate the IR photon induced majority carriers at the semiconductor oxide interface under a first bias condition. When the bias is reversed the accumulated charges are injected into an output electrode. The sensor may be used singly or in arrays of similar sensors.
    Type: Grant
    Filed: February 2, 1976
    Date of Patent: January 18, 1977
    Assignee: General Electric Company
    Inventors: Philip E. Howard, James C. Kim, Hans G. Sippach