Patents by Inventor Hans-Guenter Eckel

Hans-Guenter Eckel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10680523
    Abstract: In accordance with an embodiment, at least one switching circuit includes a voltage clamping element, and a half-bridge with a high-side switch and a low side-switch, wherein the high-side switch and the low-side switch each comprise a control node and a load path, and wherein the load paths of the high-side switch and the low side switch are connected in series. The voltage clamping element is connected in parallel with the half-bridge such that a first overall inductance of first conductors connecting the high-side switch and the low-side switch and connecting the voltage clamping element with the half-bridge is less than 20 nH.
    Type: Grant
    Filed: August 6, 2018
    Date of Patent: June 9, 2020
    Assignee: INFINEON TECHNOLOGIES AUSTRIA AG
    Inventors: Jan Fuhrmann, Thomas Basler, Hans-Guenter Eckel
  • Patent number: 10262993
    Abstract: A semiconductor device includes a first transistor structure including a first transistor body region of a first conductivity type located within a semiconductor substrate. At least part of the first transistor body region is located between a first source/drain region of the first transistor structure and a second source/drain region of the first transistor structure. The semiconductor device includes a second transistor structure including a second transistor body region of a second conductivity type located within the semiconductor substrate. At least part of the second transistor body region is located between a first source/drain region of the second transistor structure and a second source/drain region of the second transistor structure. At least part of the second source/drain region of the second transistor structure is located between a doping region comprising the second source/drain region of the first transistor structure and the second transistor body region.
    Type: Grant
    Filed: February 12, 2016
    Date of Patent: April 16, 2019
    Assignee: Infineon Technologies AG
    Inventors: Marten Müller, Hans-Günter Eckel
  • Patent number: 10243357
    Abstract: An apparatus switches a direct current in a high-voltage line. The apparatus contains a multiplicity of switching units, which are arranged so as to form a series circuit in the high-voltage line. Each switching unit in this case contains a switching element and a surge arrester arranged in a parallel circuit with the switching element, the threshold voltage of the surge arrester being higher than a rated voltage of the switching element. A sum of the rated voltages of the switching elements corresponds at least to an operating voltage of the high-voltage line. The switching elements are mechanical switches, and each mechanical switch contains a contact arrangement having two disconnectable contact pieces and is configured to build up an arcing voltage on disconnection of the contact pieces with a magnitude which is higher than the rated voltage of the mechanical switch.
    Type: Grant
    Filed: December 20, 2013
    Date of Patent: March 26, 2019
    Assignee: Siemens Aktiengesellschaft
    Inventors: Hans-Guenter Eckel, Dominik Ergin, Herbert Gambach, Hans-Joachim Knaak, Andreas Philipp, Hubert Schierling
  • Publication number: 20190058057
    Abstract: A power semiconductor device includes a semiconductor body, a first load terminal structure arranged at a front side of the semiconductor body, and a second load terminal structure arranged at a back side of the semiconductor body, and configured for controlling a load current between the load terminal structures by means of at least one transistor cell. The at least one transistor cell is at least partially included in the semiconductor body and electrically connected to the first load terminal structure on one side and to a drift region on the other side, the drift region being of a first conductivity type. The semiconductor body further includes: a transistor short region of the first conductivity type, wherein a transition between the transistor short region and the first load terminal structure forms a Schottky contact; and a separation region of a second conductivity type separating the transistor short and drift regions.
    Type: Application
    Filed: August 16, 2018
    Publication date: February 21, 2019
    Inventors: Hans-Guenter Eckel, Quang Tien Tran
  • Publication number: 20190044446
    Abstract: In accordance with an embodiment, at least one switching circuit includes a voltage clamping element, and a half-bridge with a high-side switch and a low side-switch, wherein the high-side switch and the low-side switch each comprise a control node and a load path, and wherein the load paths of the high-side switch and the low side switch are connected in series. The voltage clamping element is connected in parallel with the half-bridge such that a first overall inductance of first conductors connecting the high-side switch and the low-side switch and connecting the voltage clamping element with the half-bridge is less than 20 nH.
    Type: Application
    Filed: August 6, 2018
    Publication date: February 7, 2019
    Inventors: Jan Fuhrmann, Thomas Basler, Hans-Guenter Eckel
  • Patent number: 10033211
    Abstract: A multilevel converter has a central device for controlling operations and a plurality of series-connected sub modules that each has a first switch, a second switch, and a capacitor. At least two of the sub modules form a multi module, wherein, in charging phases and in discharging phases of the multi module, one of the switches of each sub module is switched off and the other switch of each sub module is switched on. The multi module has a control device that is connected to the central device and undertakes control of the sub modules of the multi module on the basis of control signals from the central device. The control device is configured such that it monitors the capacitor voltages of the sub modules and, in the event of an imbalance in the capacitor voltages, brings about balancing.
    Type: Grant
    Filed: August 15, 2013
    Date of Patent: July 24, 2018
    Assignee: Siemens Aktiengesellschaft
    Inventor: Hans-Günter Eckel
  • Patent number: 9929677
    Abstract: The invention relates to a active-neutral point clamped converter having at least one half-bridge circuit connected into a DC voltage circuit. Each half-bridge circuit has a high-potential-side input half-bridge and a low-potential-side input half-bridge in series. The half-bridge circuit further has an output half-bridge connected between center taps of the input half-bridges. The total inductance within the output half-bridges and between the three half-bridges is dimensioned such that if any of the power semiconductors of the half-bridge circuit fails, a short-circuit can be reliably disconnected via a shorted circuit formed between the three half-bridges of the half-bridge circuit by the intact power semiconductors in said shorted circuit.
    Type: Grant
    Filed: July 8, 2014
    Date of Patent: March 27, 2018
    Assignee: SIEMENS AKTIENGELLSCHAFT
    Inventor: Hans-Günter Eckel
  • Patent number: 9787173
    Abstract: A multilevel converter has a plurality of series-connected sub modules, which each have at least one first switch, one second switch and one capacitor. Current is output by way of the capacitor during discharging phases and current is received or charging the capacitor during charging phases. At least one of the sub modules has two part-modules that are galvanically connected to each other or are formed by two part-modules that are galvanically connected to each other. Each has a first switch, a second switch and a capacitor, and a first and a second part-module terminal. The galvanic connection between the two part-modules includes at least one inductive element.
    Type: Grant
    Filed: September 8, 2014
    Date of Patent: October 10, 2017
    Assignee: Siemens Aktiengesellschaft
    Inventor: Hans-Guenter Eckel
  • Patent number: 9780658
    Abstract: An intermediate voltage circuit current converter having two current converter sections arranged in series on the direct voltage side is disclosed. The current converter section has a capacitor connected in parallel with two bridge modules that are connected in series with each other. The output of the current converter section is located on the series connection between the two bridge modules and the outputs of the two current converter sections are connected to a further bridge module. Each bridge modules comprises a series connection of two power semiconductor units. The intermediate potentials on the connection between the two power semiconductor units in each of the bridge modules are electrically connected to one another by a further capacitor, and the intermediate potential of the further bridge module provides the phase connection of the intermediate voltage circuit current converter for a given phase of the intermediate voltage circuit current converter.
    Type: Grant
    Filed: September 29, 2015
    Date of Patent: October 3, 2017
    Assignee: SIEMENS AKTIENGESELLSCHAFT
    Inventors: Hans-Günter Eckel, Sidney Gierschner
  • Patent number: 9774187
    Abstract: A device for load flow control of a direct current in a branch of a direct current voltage network node having a longitudinal voltage source which has a coupling device for connection or disconnection of electrical power. The coupling device for connection and disconnection of electrical power are connected to a coupling device for connection and disconnection of electric power of a further load flow control device which is disposed in another branch of the same direct current voltage network node. Thus the device can be used economically and flexibly for control of a load flow on or in a network node.
    Type: Grant
    Filed: June 19, 2012
    Date of Patent: September 26, 2017
    Assignee: SIEMENS AKTIENGESELLSCHAFT
    Inventor: Hans-Guenter Eckel
  • Publication number: 20170005479
    Abstract: A power plant contains an internal AC voltage grid, electrical energy generation units which are connected to the internal AC voltage grid, and a HVDC transmission device, which is connected to the internal AC voltage grid, is connectable to an external AC voltage grid via a DC link and enables energy transmission from the internal AC voltage grid in the direction of the external AC voltage grid. The energy generation units feed their power into the internal AC voltage grid via a power electronics converter. The energy generation units each have a synchronization device, which is suitable for regulating the generation of the output voltage of the respective energy generation unit such that the phase angle of the output voltage has a setpoint phase angle, which is preset to the respective energy generation unit, with respect to a synchronization signal applied on the input side.
    Type: Application
    Filed: December 2, 2014
    Publication date: January 5, 2017
    Inventors: HANS-GUENTER ECKEL, MAGDALENA GIERSCHNER, HANS-JOACHIM KNAAK
  • Publication number: 20160315467
    Abstract: An apparatus switches a direct current in a high-voltage line. The apparatus contains a multiplicity of switching units, which are arranged so as to form a series circuit in the high-voltage line. Each switching unit in this case contains a switching element and a surge arrester arranged in a parallel circuit with the switching element, the threshold voltage of the surge arrester being higher than a rated voltage of the switching element. A sum of the rated voltages of the switching elements corresponds at least to an operating voltage of the high-voltage line. The switching elements are mechanical switches, and each mechanical switch contains a contact arrangement having two disconnectable contact pieces and is configured to build up an arcing voltage on disconnection of the contact pieces with a magnitude which is higher than the rated voltage of the mechanical switch.
    Type: Application
    Filed: December 20, 2013
    Publication date: October 27, 2016
    Inventors: Hans-Günter ECKEL, Dominik ERGIN, Herbert GAMBACH, Hans-Joachim KNAAK, Andreas PHILIPP, Hubert SCHIERLING
  • Publication number: 20160240644
    Abstract: A semiconductor device includes a first transistor structure including a first transistor body region of a first conductivity type located within a semiconductor substrate. At least part of the first transistor body region is located between a first source/drain region of the first transistor structure and a second source/drain region of the first transistor structure. The semiconductor device includes a second transistor structure including a second transistor body region of a second conductivity type located within the semiconductor substrate. At least part of the second transistor body region is located between a first source/drain region of the second transistor structure and a second source/drain region of the second transistor structure. At least part of the second source/drain region of the second transistor structure is located between a doping region comprising the second source/drain region of the first transistor structure and the second transistor body region.
    Type: Application
    Filed: February 12, 2016
    Publication date: August 18, 2016
    Inventors: Marten Müller, Hans-Guenter Eckel
  • Publication number: 20160233758
    Abstract: A multilevel converter has a plurality of series-connected sub modules, which each have at least one first switch, one second switch and one capacitor. Current is output by way of the capacitor during discharging phases and current is received or charging the capacitor during charging phases. At least one of the sub modules has two part-modules that are galvanically connected to each other or are formed by two part-modules that are galvanically connected to each other. Each has a first switch, a second switch and a capacitor, and a first and a second part-module terminal. The galvanic connection between the two part-modules includes at least one inductive element.
    Type: Application
    Filed: September 8, 2014
    Publication date: August 11, 2016
    Inventor: HANS-GUENTER ECKEL
  • Patent number: 9412853
    Abstract: A protective device for a voltage-controlled semiconductor switch has a gate connection, a power emitter connection, an auxiliary emitter connection and a collector connection. The semiconductor switch can switch a current between the collector connection and the power emitter connection. A voltage-limiting device limits the voltage between the gate connection and the power emitter connection. A deactivation device is connected to the voltage-limiting device and deactivates the voltage-limiting device during a switch-on of the semiconductor switch.
    Type: Grant
    Filed: November 7, 2011
    Date of Patent: August 9, 2016
    Assignee: SIEMENS AKTIENGESELLSCHAFT
    Inventors: Hans-Günter Eckel, Steffen Pierstorf
  • Publication number: 20160190846
    Abstract: A multilevel converter has a central device for controlling operations and a plurality of series-connected sub modules that each has a first switch, a second switch, and a capacitor. At least two of the sub modules form a multi module, wherein, in charging phases and in discharging phases of the multi module, one of the switches of each sub module is switched off and the other switch of each sub module is switched on. The multi module has a control device that is connected to the central device and undertakes control of the sub modules of the multi module on the basis of control signals from the central device. The control device is configured such that it monitors the capacitor voltages of the sub modules and, in the event of an imbalance in the capacitor voltages, brings about balancing.
    Type: Application
    Filed: August 15, 2013
    Publication date: June 30, 2016
    Inventor: HANS-GÜNTER ECKEL
  • Publication number: 20160181948
    Abstract: The invention relates to a active-neutral point clamped converter having at least one half-bridge circuit connected into a DC voltage circuit. Each half-bridge circuit has a high-potential-side input half-bridge and a low-potential-side input half-bridge in series. The half-bridge circuit further has an output half-bridge connected between center taps of the input half-bridges. The total inductance within the output half-bridges and between the three half-bridges is dimensioned such that if any of the power semiconductors of the half-bridge circuit fails, a short-circuit can be reliably disconnected via a shorted circuit formed between the three half-bridges of the half-bridge circuit by the intact power semiconductors in said shorted circuit.
    Type: Application
    Filed: July 8, 2014
    Publication date: June 23, 2016
    Applicant: SIEMENS AKTIENGESELLSCHAFT
    Inventor: Hans-Günter ECKEL
  • Publication number: 20160094128
    Abstract: An intermediate voltage circuit current converter having two current converter sections arranged in series on the direct voltage side is disclosed. The current converter section has a capacitor connected in parallel with two bridge modules that are connected in series with each other. The output of the current converter section is located on the series connection between the two bridge modules and the outputs of the two current converter sections are connected to a further bridge module. Each bridge modules comprises a series connection of two power semiconductor units. The intermediate potentials on the connection between the two power semiconductor units in each of the bridge modules are electrically connected to one another by a further capacitor, and the intermediate potential of the further bridge module provides the phase connection of the intermediate voltage circuit current converter for a given phase of the intermediate voltage circuit current converter.
    Type: Application
    Filed: September 29, 2015
    Publication date: March 31, 2016
    Applicant: Siemens Aktiengesellschaft
    Inventors: Hans-Günter Eckel, Sidney Gierschner
  • Patent number: 9263969
    Abstract: A submodule for a high-voltage converter with reduced risk of cross-ignition includes first and second series-connected energy storage devices, first and second semiconductor series circuits connected in parallel with the energy storage devices, respectively, and having first and second, and respectively third and fourth, switched power semiconductor switching units. A first terminal connects to a first potential point between the first and second switching units, a second terminal connects to a second potential point between the third and fourth switching units. A connecting switching unit is connected between the first and second semiconductor series circuits. A first connecting branch with a first diode connects the first potential point and the potential point between the energy storage devices. A second connecting branch with a second diode connects the second potential point and the potential point between the energy storage devices.
    Type: Grant
    Filed: June 11, 2010
    Date of Patent: February 16, 2016
    Assignee: SIEMENS AKTIENGESELLSCHAFT
    Inventors: Hans-Günter Eckel, Herbert Gambach
  • Patent number: 9263933
    Abstract: The invention relates to a method for commutating from a reverse-conducting IGBT (T1) operated in the diode mode to a reverse-conducting IGBT (T2) operated in the IGBT mode. According to the invention the reverse-conducting IGBT (T1) operated in the diode mode is turned off only at the instant a current starts to flow in the reverse-conducting IGBT (T2) operated in the IGBT mode. Accordingly said commutation method is event-driven, as a result of which it is less sensitive to poorly toleranced operating times.
    Type: Grant
    Filed: May 17, 2010
    Date of Patent: February 16, 2016
    Assignee: SIEMENS AKTIENGESELLSCHAFT
    Inventor: Hans-Günter Eckel