Abstract: An RC IGBT includes, in a single chip, an active region configured to conduct both a forward load current and a reverse load current between a first load terminal at a front side of a semiconductor body of the RC IGBT and a second load terminal at a back side of the semiconductor body. The active region is separated into at least an IGBT-only region and an RC IGBT region. At least 90% of the IGBT-only region is configured to conduct, based on a first control signal, only the forward load current. At least 90% of the RC IGBT region is configured to conduct the reverse load current and, based on a second control signal, the forward load current.

Abstract: In an example, a semiconductor device includes an insulated gate transistor cell, a first region (e.g., a drain region and/or a drift region), a cathode region, a second region (e.g., an anode region and/or a separation region), and a source electrode. The insulated gate transistor cell includes a source region and a gate electrode. The source region and the cathode region are in a silicon carbide body. The gate electrode and the cathode region are electrically connected. The cathode region, the source region, and the first region have a first conductivity type. The second region has a second conductivity type and is between the cathode region and the first region. The source electrode and the source region are electrically connected. The source electrode and the second region are in contact with each other. A rectifying junction is electrically coupled between the source electrode and the cathode region.

Abstract: In an example, a semiconductor device includes an insulated gate transistor cell, a first region (e.g., a drain region and/or a drift region), a cathode region, a second region (e.g., an anode region and/or a separation region), and a source electrode. The insulated gate transistor cell includes a source region and a gate electrode. The source region and the cathode region are in a silicon carbide body. The gate electrode and the cathode region are electrically connected. The cathode region, the source region, and the first region have a first conductivity type. The second region has a second conductivity type and is between the cathode region and the first region. The source electrode and the source region are electrically connected. The source electrode and the second region are in contact with each other. A rectifying junction is electrically coupled between the source electrode and the cathode region.

Abstract: A power semiconductor device includes a semiconductor body, a first load terminal structure arranged at a front side of the semiconductor body, and a second load terminal structure arranged at a back side of the semiconductor body, and configured for controlling a load current between the load terminal structures by means of at least one transistor cell. The at least one transistor cell is at least partially included in the semiconductor body and electrically connected to the first load terminal structure on one side and to a drift region on the other side, the drift region being of a first conductivity type. The semiconductor body further includes: a transistor short region of the first conductivity type, wherein a transition between the transistor short region and the first load terminal structure forms a Schottky contact; and a separation region of a second conductivity type separating the transistor short and drift regions.

Abstract: A power module for a converter, in particular for a multilevel converter. The power module includes a link circuit capacitor, two connection terminals, at least one half-bridge connected in parallel with the link circuit capacitor and having two semiconductor switches, and, for each half-bridge, a bypass diode connected in parallel with a first semiconductor switch of the half-bridge and a load-relief circuit group connected in parallel with the first semiconductor switch. The load-relief circuit group has a load-relief thyristor and a load-relief diode connected in series with the load-relief thyristor.

Abstract: In accordance with an embodiment, at least one switching circuit includes a voltage clamping element, and a half-bridge with a high-side switch and a low side-switch, wherein the high-side switch and the low-side switch each comprise a control node and a load path, and wherein the load paths of the high-side switch and the low side switch are connected in series. The voltage clamping element is connected in parallel with the half-bridge such that a first overall inductance of first conductors connecting the high-side switch and the low-side switch and connecting the voltage clamping element with the half-bridge is less than 20 nH.

Abstract: An apparatus switches a direct current in a high-voltage line. The apparatus contains a multiplicity of switching units, which are arranged so as to form a series circuit in the high-voltage line. Each switching unit in this case contains a switching element and a surge arrester arranged in a parallel circuit with the switching element, the threshold voltage of the surge arrester being higher than a rated voltage of the switching element. A sum of the rated voltages of the switching elements corresponds at least to an operating voltage of the high-voltage line. The switching elements are mechanical switches, and each mechanical switch contains a contact arrangement having two disconnectable contact pieces and is configured to build up an arcing voltage on disconnection of the contact pieces with a magnitude which is higher than the rated voltage of the mechanical switch.

Abstract: A power semiconductor device includes a semiconductor body, a first load terminal structure arranged at a front side of the semiconductor body, and a second load terminal structure arranged at a back side of the semiconductor body, and configured for controlling a load current between the load terminal structures by means of at least one transistor cell. The at least one transistor cell is at least partially included in the semiconductor body and electrically connected to the first load terminal structure on one side and to a drift region on the other side, the drift region being of a first conductivity type. The semiconductor body further includes: a transistor short region of the first conductivity type, wherein a transition between the transistor short region and the first load terminal structure forms a Schottky contact; and a separation region of a second conductivity type separating the transistor short and drift regions.

Abstract: In accordance with an embodiment, at least one switching circuit includes a voltage clamping element, and a half-bridge with a high-side switch and a low side-switch, wherein the high-side switch and the low-side switch each comprise a control node and a load path, and wherein the load paths of the high-side switch and the low side switch are connected in series. The voltage clamping element is connected in parallel with the half-bridge such that a first overall inductance of first conductors connecting the high-side switch and the low-side switch and connecting the voltage clamping element with the half-bridge is less than 20 nH.

Abstract: A multilevel converter has a plurality of series-connected sub modules, which each have at least one first switch, one second switch and one capacitor. Current is output by way of the capacitor during discharging phases and current is received or charging the capacitor during charging phases. At least one of the sub modules has two part-modules that are galvanically connected to each other or are formed by two part-modules that are galvanically connected to each other. Each has a first switch, a second switch and a capacitor, and a first and a second part-module terminal. The galvanic connection between the two part-modules includes at least one inductive element.

Abstract: A device for load flow control of a direct current in a branch of a direct current voltage network node having a longitudinal voltage source which has a coupling device for connection or disconnection of electrical power. The coupling device for connection and disconnection of electrical power are connected to a coupling device for connection and disconnection of electric power of a further load flow control device which is disposed in another branch of the same direct current voltage network node. Thus the device can be used economically and flexibly for control of a load flow on or in a network node.

Abstract: A semiconductor device includes a first transistor structure including a first transistor body region of a first conductivity type located within a semiconductor substrate. At least part of the first transistor body region is located between a first source/drain region of the first transistor structure and a second source/drain region of the first transistor structure. The semiconductor device includes a second transistor structure including a second transistor body region of a second conductivity type located within the semiconductor substrate. At least part of the second transistor body region is located between a first source/drain region of the second transistor structure and a second source/drain region of the second transistor structure. At least part of the second source/drain region of the second transistor structure is located between a doping region comprising the second source/drain region of the first transistor structure and the second transistor body region.

Abstract: A device for load flow control of a direct current in a branch of a direct current voltage network node having a longitudinal voltage source which has a coupling device for connection or disconnection of electrical power. The coupling device for connection and disconnection of electrical power are connected to a coupling device for connection and disconnection of electric power of a further load flow control device which is disposed in another branch of the same direct current voltage network node. Thus the device can be used economically and flexibly for control of a load flow on or in a network node.

Abstract: A submodule for a modular multilevel converter has at least one unipolar energy storage device, first and second connection terminals and a power semiconductor circuit with power semiconductor switches that are driven with a control signal and freewheeling diodes connected in parallel with an assigned power semiconductor switch in the opposite sense. Depending on the driving of the power semiconductor switches, the voltage across the energy storage device(s) or else a zero voltage can be generated between the first and second connection terminals. The power semiconductor circuit forms a bridging branch between the potential points of the first and second connection terminals. Only the power semiconductor switches in the bridging branch are reverse conductive power semiconductor switches. The submodule has low on-state losses during normal operation and is also cost-effective.