Patents by Inventor Hans-Gunter Eckel
Hans-Gunter Eckel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11695349Abstract: A method for controlling a power converter, which in particular has partial power converters connected in parallel, is provided. The method includes determining a nominal voltage for the power converter; and dividing an output voltage for the power converter into a number of, in particular equal, voltage ranges. The voltage ranges are limited by a discrete upper voltage limit and a discrete lower voltage limit and the voltage ranges can be adjusted by switching the power converter, in particular the partial power converters. The method includes allocating the nominal voltage a voltage range with a discrete upper and lower voltage limits; allocating a first switch setting to the lower voltage limit; allocating a second switch setting to the upper voltage limit; and switching between the first switch setting and the second switch setting so that the power converter generates an actual voltage corresponding to the nominal voltage.Type: GrantFiled: November 8, 2021Date of Patent: July 4, 2023Assignee: Wobben Properties GmbHInventors: Yves Hein, Hans-Günter Eckel
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Publication number: 20220166336Abstract: A method for generating at least one AC voltage using at least one inverter device is provided. The inverter device in each case includes comprises at least one voltage input for applying an input voltage, at least one voltage output for outputting an output voltage and at least one DC voltage intermediate circuit for providing an intermediate circuit voltage. The method includes controlling an AC voltage at the voltage output so as to output a first portion of an input power in the form of useful power, or to receive the input power or a portion thereof, and changing a system voltage of the inverter device such that at least one compensation current flows through at least one load resistor, in order thereby to output a second portion of the input power or the entire input power to the at least one load resistor in the form of excess power.Type: ApplicationFiled: April 1, 2020Publication date: May 26, 2022Inventors: Hans-Günter ECKEL, Ingmar KAISER
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Publication number: 20220149749Abstract: A method for controlling a power converter, which in particular has partial power converters connected in parallel, is provided. The method includes determining a nominal voltage for the power converter; and dividing an output voltage for the power converter into a number of, in particular equal, voltage ranges. The voltage ranges are limited by a discrete upper voltage limit and a discrete lower voltage limit and the voltage ranges can be adjusted by switching the power converter, in particular the partial power converters. The method includes allocating the nominal voltage a voltage range with a discrete upper and lower voltage limits; allocating a first switch setting to the lower voltage limit; allocating a second switch setting to the upper voltage limit; and switching between the first switch setting and the second switch setting so that the power converter generates an actual voltage corresponding to the nominal voltage.Type: ApplicationFiled: November 8, 2021Publication date: May 12, 2022Inventors: Yves HEIN, Hans-Günter ECKEL
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Patent number: 10262993Abstract: A semiconductor device includes a first transistor structure including a first transistor body region of a first conductivity type located within a semiconductor substrate. At least part of the first transistor body region is located between a first source/drain region of the first transistor structure and a second source/drain region of the first transistor structure. The semiconductor device includes a second transistor structure including a second transistor body region of a second conductivity type located within the semiconductor substrate. At least part of the second transistor body region is located between a first source/drain region of the second transistor structure and a second source/drain region of the second transistor structure. At least part of the second source/drain region of the second transistor structure is located between a doping region comprising the second source/drain region of the first transistor structure and the second transistor body region.Type: GrantFiled: February 12, 2016Date of Patent: April 16, 2019Assignee: Infineon Technologies AGInventors: Marten Müller, Hans-Günter Eckel
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Patent number: 10033211Abstract: A multilevel converter has a central device for controlling operations and a plurality of series-connected sub modules that each has a first switch, a second switch, and a capacitor. At least two of the sub modules form a multi module, wherein, in charging phases and in discharging phases of the multi module, one of the switches of each sub module is switched off and the other switch of each sub module is switched on. The multi module has a control device that is connected to the central device and undertakes control of the sub modules of the multi module on the basis of control signals from the central device. The control device is configured such that it monitors the capacitor voltages of the sub modules and, in the event of an imbalance in the capacitor voltages, brings about balancing.Type: GrantFiled: August 15, 2013Date of Patent: July 24, 2018Assignee: Siemens AktiengesellschaftInventor: Hans-Günter Eckel
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Patent number: 9929677Abstract: The invention relates to a active-neutral point clamped converter having at least one half-bridge circuit connected into a DC voltage circuit. Each half-bridge circuit has a high-potential-side input half-bridge and a low-potential-side input half-bridge in series. The half-bridge circuit further has an output half-bridge connected between center taps of the input half-bridges. The total inductance within the output half-bridges and between the three half-bridges is dimensioned such that if any of the power semiconductors of the half-bridge circuit fails, a short-circuit can be reliably disconnected via a shorted circuit formed between the three half-bridges of the half-bridge circuit by the intact power semiconductors in said shorted circuit.Type: GrantFiled: July 8, 2014Date of Patent: March 27, 2018Assignee: SIEMENS AKTIENGELLSCHAFTInventor: Hans-Günter Eckel
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Patent number: 9780658Abstract: An intermediate voltage circuit current converter having two current converter sections arranged in series on the direct voltage side is disclosed. The current converter section has a capacitor connected in parallel with two bridge modules that are connected in series with each other. The output of the current converter section is located on the series connection between the two bridge modules and the outputs of the two current converter sections are connected to a further bridge module. Each bridge modules comprises a series connection of two power semiconductor units. The intermediate potentials on the connection between the two power semiconductor units in each of the bridge modules are electrically connected to one another by a further capacitor, and the intermediate potential of the further bridge module provides the phase connection of the intermediate voltage circuit current converter for a given phase of the intermediate voltage circuit current converter.Type: GrantFiled: September 29, 2015Date of Patent: October 3, 2017Assignee: SIEMENS AKTIENGESELLSCHAFTInventors: Hans-Günter Eckel, Sidney Gierschner
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Publication number: 20160315467Abstract: An apparatus switches a direct current in a high-voltage line. The apparatus contains a multiplicity of switching units, which are arranged so as to form a series circuit in the high-voltage line. Each switching unit in this case contains a switching element and a surge arrester arranged in a parallel circuit with the switching element, the threshold voltage of the surge arrester being higher than a rated voltage of the switching element. A sum of the rated voltages of the switching elements corresponds at least to an operating voltage of the high-voltage line. The switching elements are mechanical switches, and each mechanical switch contains a contact arrangement having two disconnectable contact pieces and is configured to build up an arcing voltage on disconnection of the contact pieces with a magnitude which is higher than the rated voltage of the mechanical switch.Type: ApplicationFiled: December 20, 2013Publication date: October 27, 2016Inventors: Hans-Günter ECKEL, Dominik ERGIN, Herbert GAMBACH, Hans-Joachim KNAAK, Andreas PHILIPP, Hubert SCHIERLING
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Patent number: 9412853Abstract: A protective device for a voltage-controlled semiconductor switch has a gate connection, a power emitter connection, an auxiliary emitter connection and a collector connection. The semiconductor switch can switch a current between the collector connection and the power emitter connection. A voltage-limiting device limits the voltage between the gate connection and the power emitter connection. A deactivation device is connected to the voltage-limiting device and deactivates the voltage-limiting device during a switch-on of the semiconductor switch.Type: GrantFiled: November 7, 2011Date of Patent: August 9, 2016Assignee: SIEMENS AKTIENGESELLSCHAFTInventors: Hans-Günter Eckel, Steffen Pierstorf
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Publication number: 20160190846Abstract: A multilevel converter has a central device for controlling operations and a plurality of series-connected sub modules that each has a first switch, a second switch, and a capacitor. At least two of the sub modules form a multi module, wherein, in charging phases and in discharging phases of the multi module, one of the switches of each sub module is switched off and the other switch of each sub module is switched on. The multi module has a control device that is connected to the central device and undertakes control of the sub modules of the multi module on the basis of control signals from the central device. The control device is configured such that it monitors the capacitor voltages of the sub modules and, in the event of an imbalance in the capacitor voltages, brings about balancing.Type: ApplicationFiled: August 15, 2013Publication date: June 30, 2016Inventor: HANS-GÜNTER ECKEL
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Publication number: 20160181948Abstract: The invention relates to a active-neutral point clamped converter having at least one half-bridge circuit connected into a DC voltage circuit. Each half-bridge circuit has a high-potential-side input half-bridge and a low-potential-side input half-bridge in series. The half-bridge circuit further has an output half-bridge connected between center taps of the input half-bridges. The total inductance within the output half-bridges and between the three half-bridges is dimensioned such that if any of the power semiconductors of the half-bridge circuit fails, a short-circuit can be reliably disconnected via a shorted circuit formed between the three half-bridges of the half-bridge circuit by the intact power semiconductors in said shorted circuit.Type: ApplicationFiled: July 8, 2014Publication date: June 23, 2016Applicant: SIEMENS AKTIENGESELLSCHAFTInventor: Hans-Günter ECKEL
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Publication number: 20160094128Abstract: An intermediate voltage circuit current converter having two current converter sections arranged in series on the direct voltage side is disclosed. The current converter section has a capacitor connected in parallel with two bridge modules that are connected in series with each other. The output of the current converter section is located on the series connection between the two bridge modules and the outputs of the two current converter sections are connected to a further bridge module. Each bridge modules comprises a series connection of two power semiconductor units. The intermediate potentials on the connection between the two power semiconductor units in each of the bridge modules are electrically connected to one another by a further capacitor, and the intermediate potential of the further bridge module provides the phase connection of the intermediate voltage circuit current converter for a given phase of the intermediate voltage circuit current converter.Type: ApplicationFiled: September 29, 2015Publication date: March 31, 2016Applicant: Siemens AktiengesellschaftInventors: Hans-Günter Eckel, Sidney Gierschner
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Patent number: 9263969Abstract: A submodule for a high-voltage converter with reduced risk of cross-ignition includes first and second series-connected energy storage devices, first and second semiconductor series circuits connected in parallel with the energy storage devices, respectively, and having first and second, and respectively third and fourth, switched power semiconductor switching units. A first terminal connects to a first potential point between the first and second switching units, a second terminal connects to a second potential point between the third and fourth switching units. A connecting switching unit is connected between the first and second semiconductor series circuits. A first connecting branch with a first diode connects the first potential point and the potential point between the energy storage devices. A second connecting branch with a second diode connects the second potential point and the potential point between the energy storage devices.Type: GrantFiled: June 11, 2010Date of Patent: February 16, 2016Assignee: SIEMENS AKTIENGESELLSCHAFTInventors: Hans-Günter Eckel, Herbert Gambach
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Patent number: 9263933Abstract: The invention relates to a method for commutating from a reverse-conducting IGBT (T1) operated in the diode mode to a reverse-conducting IGBT (T2) operated in the IGBT mode. According to the invention the reverse-conducting IGBT (T1) operated in the diode mode is turned off only at the instant a current starts to flow in the reverse-conducting IGBT (T2) operated in the IGBT mode. Accordingly said commutation method is event-driven, as a result of which it is less sensitive to poorly toleranced operating times.Type: GrantFiled: May 17, 2010Date of Patent: February 16, 2016Assignee: SIEMENS AKTIENGESELLSCHAFTInventor: Hans-Günter Eckel
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Publication number: 20140320198Abstract: A protective device for a voltage-controlled semiconductor switch has a gate connection, a power emitter connection, an auxiliary emitter connection and a collector connection. The semiconductor switch can switch a current between the collector connection and the power emitter connection. A voltage-limiting device limits the voltage between the gate connection and the power emitter connection. A deactivation device is connected to the voltage-limiting device and deactivates the voltage-limiting device during a switch-on of the semiconductor switch.Type: ApplicationFiled: November 7, 2011Publication date: October 30, 2014Applicant: SIEMENS AKTIENGESELLSCHAFTInventors: Hans-Günter Eckel, Steffen Pierstorf
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Patent number: 8854109Abstract: A method for controlling two electrically series-connected reverse-conductive (RC) IGBTs (RC-IBGT) of a half bridge is disclosed, wherein an operating DC voltage is applied across the series connection and one of the two series-connected reverse-conductive IGBTs operates in IGBT mode and another of the two series-connected reverse-conductive IGBTs operates in diode mode, and wherein each of the two reverse-conductive IGBTs has three switching states “+15V”, “0V”, “?15V”. The RC-IGBT T1 operated in diode mode does not go into the switching state (?15V) of highly charged carrier concentration, but instead into a state of medium charge carrier concentration associated with the switching state “0V”, and not into the switching state “?15V”, as is known from conventional methods. This reduces the reverse-recovery without adversely affecting the forward voltage.Type: GrantFiled: January 13, 2012Date of Patent: October 7, 2014Assignee: Siemens AktiengesellschaftInventor: Hans-Günter Eckel
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Publication number: 20130321062Abstract: A method for controlling two electrically series-connected reverse-conductive (RC) IGBTs (RC-IBGT) of a half bridge is disclosed, wherein an operating DC voltage is applied across the series connection and one of the two series-connected reverse-conductive IGBTs operates in IGBT mode and another of the two series-connected reverse-conductive IGBTs operates in diode mode, and wherein each of the two reverse-conductive IGBTs has three switching states “+15V”, “0V”, “?15V”. The RC-IGBT T1 operated in diode mode does not go into the switching state (?15V) of highly charged carrier concentration, but instead into a state of medium charge carrier concentration associated with the switching state “0V”, and not into the switching state “?15V”, as is known from conventional methods. This reduces the reverse-recovery without adversely affecting the forward voltage.Type: ApplicationFiled: January 13, 2012Publication date: December 5, 2013Applicant: Siemens AktiengesellschaftInventor: Hans-Günter Eckel
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Patent number: 8415747Abstract: A semiconductor device includes a cathode and an anode. The anode includes a first p-type semiconductor anode region and a second p-type semiconductor anode region. The first p-type semiconductor anode region is electrically connected to an anode contact area. The second p-type semiconductor anode region is electrically coupled to the anode contact area via a switch configured to provide an electrical connection or an electrical disconnection between the second p-type anode region and the anode contact area.Type: GrantFiled: December 28, 2010Date of Patent: April 9, 2013Assignee: Infineon Technologies Austria AGInventors: Hans-Günter Eckel, Jörg Schumann
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Publication number: 20130082534Abstract: A submodule for a high-voltage converter with reduced risk of cross-ignition includes first and second series-connected energy storage devices, first and second semiconductor series circuits connected in parallel with the energy storage devices, respectively, and having first and second, and respectively third and fourth, switched power semiconductor switching units. A first terminal connects to a first potential point between the first and second switching units, a second terminal connects to a second potential point between the third and fourth switching units. A connecting switching unit is connected between the first and second semiconductor series circuits. A first connecting branch with a first diode connects the first potential point and the potential point between the energy storage devices. A second connecting branch with a second diode connects the second potential point and the potential point between the energy storage devices.Type: ApplicationFiled: June 11, 2010Publication date: April 4, 2013Applicant: SIEMENS AKTIENGESELLSCHAFTInventors: Hans-Günter Eckel, Herbert Gambach
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Publication number: 20120161224Abstract: A semiconductor device includes a cathode and an anode. The anode includes a first p-type semiconductor anode region and a second p-type semiconductor anode region. The first p-type semiconductor anode region is electrically connected to an anode contact area. The second p-type semiconductor anode region is electrically coupled to the anode contact area via a switch configured to provide an electrical connection or an electrical disconnection between the second p-type anode region and the anode contact area.Type: ApplicationFiled: December 28, 2010Publication date: June 28, 2012Applicant: INFINEON TECHNOLOGIES AUSTRIA AGInventors: Hans-Günter Eckel, Jörg Schumann