Abstract: A chemical transport process which is enhanced by a plasma formed in a substantially oxygen free hydrogen environment for formation of microcrystalline diamond films at a relatively low deposition temperature and a rate of about 1 .mu.m/hr. The process, performed at 80 to 180 Torr and a current density of about 1 amp/cm.sup.2 of substrate, can be scaled to deposit films on large areas. The invention further comprises doped diamond films produced by the process, said product having a well-faceted microcrystalline structure with x-ray diffraction pattern and Raman spectra indicative of a predominately diamond structure. The doped diamond films can function as n-type and p-type semiconductors.

Abstract: Doped and undoped polycrystalline and noncrystalline diamond films produced by plasma enhanced chemical transport emit electrons into a vacuum in response to an applied electrical field. The field required to create emission is less than 20 V/.mu.m for doped polycrystalline films, can be in the range of 5 to 8 volts/.mu.m for undoped nanocrystalline films and may be 3 volts/.mu.m or less for doped nanocrystalline films. These materials exhibit emission properties which are continuous across the whole surface of the film.

Abstract: A process and system for producing fullerenes by sputtering. A carbon target is sputtered to form a vapor of sputtered carbon atoms. The sputtered carbon atoms are quenched in an atmosphere of inert gas and deposited onto a collection substrate. The resulting carbon soot is extracted to recover fullerenes. The process produces carbon soot which is rich in C.sub.70 and higher fullerenes.

Abstract: A process and system for producing fullerenes by electron beam evaporation of a carbon target in a vacuum. A carbon target is evaporated by an electron beam in a vacuum to form a flux of carbon atoms or clusters. The evaporated carbon atoms or clusters are deposited onto collection substrates which are electrically charged and heated or neutral and chilled. The resulting carbon soot is extracted to recover fullerenes. The process produces carbon soot which is rich in C.sub.70 and higher fullerenes.

Abstract: A process for depositing metal oxides by activated reactive evaporation (ARE) wherein deposition rate and film quality is controlled by reference to the relative amounts of metal and metal oxide present on the surface of the target material. The ratio of metal surface area to metal oxide surface area required to obtain high deposition rates is achieved by maintaining a relatively high concentration of oxygen in the reaction zone. This relative ratio of metal surface area to metal oxide surface area on target material provides a continuous indirect measure of film deposition rate and quality during the ARE process.

Abstract: A process and apparatus that may be used for the production of diamond and doped diamond films at high rates by activated reactive vapor deposition. Carbon is evaporated in a vacuum chamber in the presence of atomic hydrogen containing plasma to form diamond precursors which then deposit on a substrate located within the vacuum chamber. The substrate temperature is maintained at between about 20.degree.-600.degree. C.

Abstract: A process and apparatus that may be used for the production of diamond and doped diamond films at high rates by activated reactive vapor deposition. Carbon is evaporated in a vacuum chamber in the presence of atomic hydrogen containing plasma to form diamond precursors which then deposit on a substrate located within the vacuum chamber.