Patents by Inventor Hans-J. Herzog

Hans-J. Herzog has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Structured semiconductor body
    Patent number: 4949146
    Abstract: A structured semiconductor body e.g., an integrated circuit or a transistor, based on an silicon substrate having barrier regions which contain polycrystalline silicon, preferably produced by a silicon MBE process. The barrier regions are required to delimit monocrystalline silicon semiconductor regions and/or structures to prevent undesirable current flow.
    Type: Grant
    Filed: December 12, 1986
    Date of Patent: August 14, 1990
    Assignees: Licentia Patent-Verwaltungs GmbH, Telefunken electronic GmbH
    Inventors: Hans J. Herzog, Klaus Worner, Erich Kasper
  • Modulation doped field effect transistor with doped Si.sub.x Ge.sub.1-x -intrinsic Si layering
    Patent number: 4710788
    Abstract: A modulation doped field effect transistor (MODFET) having an n-conductive channel. This channel is produced by a heterostructure formed on a silicon substrate and composed of a modulation doped Si.sub.1-x Ge.sub.x layer as well as an undoped Si layer.
    Type: Grant
    Filed: December 1, 1986
    Date of Patent: December 1, 1987
    Assignee: Licentia Patent-Verwaltungs-GmbH
    Inventors: Heinrich Dambkes, Hans-J. Herzog, Helmut Jorke