Abstract: A process is provided for the intracellular manipulation of a biological cell (3) which is positioned adhering to a support area (5) in a culture medium (2). Inside the support area (5) for the cell (3) an opening into the membrane of the cell (3) is created spaced from its support edge. The edge of the cell membrane surrounding the opening, adhering to the support area (5), thus seals off the cell fluid situated in the interior of the cell (3) from the culture medium (2) and insulates the cell fluid against the culture medium (2). The interior of the cell (3) is manipulated through the opening. An apparatus for implementing the process is also provided, including an object carrier (4) with a support area (5) for adhering the cell and a poration tool (6) for creating the opening in the cell membrane. The poration tool (6) may be any of various chemical, mechanical and/or electrical devices.

Abstract: In a method for examination of the surface of an object for a topographic and/or a chemical property, the object-surface is impinged with surface-structure selective biocomponents for examination of a topographic property and/or with chemoselective biocomponents for the examination of a chemical property, together with a nutrient medium and/or an osmotic protective medium for the biocomponents. The biocomponents contained in the nutrient medium and/or the osmotic protective medium are in contact with the object-surface or are spaced from the object surface by less than the detection range of the biocomponents. The object surface is then examined with the biocomponents contained in the nutrient medium and/or the osmotic protective medium by determining at least one examination measurement value. The examination measurement value is compared with a reference measurement value, and conclusions can be drawn about the topographic and/or chemical properties of the object from the result of the comparison.

Abstract: A process is provided for the intracellular manipulation of a biological cell (3) which is positioned adhering to a support area (5) in a culture medium (2). Inside the support area (5) for the cell (3) an opening into the membrane of the cell (3) is created spaced from its support edge. The edge of the cell membrane surrounding the opening, adhering to the support area (5), thus seals off the cell fluid situated in the interior of the cell (3) from the culture medium (2) and insulates the cell fluid against the culture medium (2). The interior of the cell (3) is manipulated through the opening. An apparatus for implementing the process is also provided, including an object carrier (4) with a support area (5) for adhering the cell and a poration tool (6) for creating the opening in the cell membrane. The poration tool (6) may be any of various chemical, mechanical and/or electrical devices.

Abstract: A measuring device (1), for examining a medium (2) that is liquid or free-flowing, has at least two electrically and/or optically conducting layers or layer areas (5a, 5b, 5c, 6a, 6b, 7a, 7b) located on a substrate layer (3), wherein these layers or layer areas are electrically and/or optically insulated from each other. At least one of these layers or layer areas (5a, 5b, 5c, 6a, 6b, 7a, 7b) is part of a layer stack (4), which has several layers arranged on top of each other on the substrate layer (3). The layer stack has, on its side facing away from the substrate layer (3), a recess that adjoins the electrically and/or optically conducting layers or layer areas (5a, 5b, 6a, 6b, 7a, 7b). At least one electrically and/or optically conducting layer or layer area (5a, 5b, 6a, 6b, 7a, 7b) located in the layer stack (4) is spaced at a distance from the bottom (11) of the recess (10).

Abstract: A method is provided for measuring a state variable of a biological cell (3) located in a nutrient medium (2) and supported on and adhering to a support area (5). Within the support area (5) for the cell (3) and at a distance from the support area edge, an opening is made in the membrane of the cell (3). The edge of the cell membrane that surrounds the opening and adheres to the support area (5) seals off the liquid found inside the cell (3) from the nutrient medium (2). Through the opening the state variable (2) is measured. An apparatus for performing the method is also provided.

Abstract: A coupling (1) has a coupling receiver (2) and a coupling counterpart (3) connectable with it, which in the coupling position is held in a receiver depression (6) of the coupling receiver. The receiver depression (6) is arranged in a layer stack (4) with at least two layers (5a, 5b, 5c, 5d, 5e). Proceeding from the flat surface of the layer stack (4) bordering upon the recess depression (6) to the interior of the receiver depression (6), the lateral boundary wall of the recess depression (6) has at least one cutback, which is formed by a receding layer (5a, 5c) or a receding layer area. The coupling counterpart (3) has at least one lateral guide and/or locking projection (9a, 9b), which engages into a cutback (8a, 8b) of the component (2) in the coupling position.

Abstract: A chip arrangement (1) has a substrate board (2) with an opening (3), into which a carrier chip (4) is inserted, which has an electrical or electronic structural component (5). At least one conductor path (7) is integrated into the carrier chip (4), which connects the structural component (5) to the electrical connection contact (8). The carrier chip (4) is inserted into the opening (3) in such a way that its ends project beyond the opposite-facing, flat-sided surfaces (9, 9′) of the substrate board (2), and thereby form overhangs (10, 10′). Here, the structural component is arranged on the overhang (10) projecting beyond the one surface (9), and the connection contact (8) is arranged on the overhang (10′) projecting beyond the other surface (9′), and the conductor path (7) connecting the structural component (5) and the connection contact (8) passes through the opening (3). A seal is arranged between the substrate board (2) and the carrier chip (4).

Abstract: A process is provided for manufacturing a layer arrangement (1) having a bump for a flip chip or similar connection. The layer arrangement has a plurality of layers (2, 3, 4, 5, 6, 7, 11) made of solid material and stacked into a layer stack (8). A recess (10) that extends over several layers (2, 3, 4, 5, 6, 7, 11) is made in the layer stack (8) transverse to the coating planes of the layers (2, 3, 4, 5, 6, 7, 11). A bump material (14) is placed in the recess (10). A profiling is created on the lateral boundary wall of the recess (10) by removal of layer material of different layers (2, 3, 4, 5, 6, 7, 11) of the layer stack (8). The profiling, starting from the surface (9) of the layer stack (8) and progressing in layers to the inside of the recess (10), has at least two indentations (12) and at least one projection (13) located between them. After the production of the profiling, a bump material (14) is brought into the recess (10) in such a way that it grasps behind the indentations (12).

Abstract: A method is disclosed for forming implanted wells and islands of CMOS integrated circuits with a retrograde profile, i.e., with wells and islands having a smaller penetration depth, shallower doping profile, and less lateral diffusion than in conventional CMOS circuits.

Abstract: A method for producing a monolithic integrated circuit having at least a pair of complementary field effect transistors and at least one bipolar transistor is described. A stripe of a relatively thin oxide layer formed during the gate oxide process for the field effect transistors separates the emitter region area and collector contact region area of the bipolar transistor. During a separate masked ion implantation step, the base zone doping material of the bipolar transistor is implanted. The emitter zone is diffused from a polycrystalline emitter electrode formed during the processing of the gate electrodes.

Abstract: The invention relates to an ion-implantation process for fabricating integrated bipolar planar transistors, particularly transistors for very high frequencies. To prevent the variations in the thicknesss of the insulating layer, through which the dopants for the base region are implanted into the semiconductor body in the form of ions, from causing variations in current gain, the dopants for the emitter regions are implanted through the same insulating layer as the dopants for the base region. The total charge in the base region below the emitter region thus becomes substantially independent of thickness variations of the insulating layer through which the dopants for the emitter region and those for the base region are implanted.