Abstract: The invention refers to a tipping conveyor element for a continuous piece goods conveyor the driven barrow tram of which included many flexibly linked conveyor elements that each have a tray-shaped supporting plate in their upper end section. The first supporting plate sections of this supporting plate running in conveyor direction are preferably bent or curved upward in relation to the next adjacent section inward, i.e., the second supporting plate sections. A third supporting plate section is connected to a second supporting plate section inward. This third section is inclined or curved downward in relation to the adjacent second supporting plate section.

Abstract: An article has a wall with a first, continuous region and a second, smaller region on the first region and integrally mereged with the first region thereat, both wall regions being made of PVC materials for so integrally merging by the common PVC constituent thereof in the process of forming the regions one on the other. The second wall region is preferably made harder by irradiation crosslinking after forming the regions.

Abstract: The method makes possible the manufacture of luminescence diodes on the basis of GaAsP or other ternary semiconductor layers deposited on a Ge substrate of n-type conductivity, followed by a zinc diffusion. In the method, a resist layer is deposited on the backside of the Ge substrate to passivate the backside to an extent such that it becomes thermally and chemically stable and does not release any Ge to the ambient atmosphere, and the front side of the Ge substrate is chemo-mechanically polished to microsmoothness. Immediately before the epitaxial deposition, the polished front side is subjected to a very weak chemical etching to a removal depth of 500 A units without eliminating the polish or microsmoothness and, thereupon, the substrate is heated, in a high purity hydrogen atmosphere, to a temperature between about 680.degree. C and 720.degree. C and a GaAs layer is deposited on the front side. The temperature is then increased and there is deposited, on the GaAs layer, a ternary A.sub.III B.sub.

Abstract: A method of producing a siliceous cover layer on a semiconductor element or wafer so that the temperature coefficient of the cover layer is approximated to the temperature coefficient of the semiconductor wafer, comprises distributing a combined emulsion over the wafer by centrifugal force. The combined emulsion is formed by making a mixture of a first emulsion of a non-doped, pure, silica emulsion and a second emulsion of a heavily-doped silica emulsion and adjusting the ratio of the first and second emulsions so that the temperature coefficient of the formed layer will be substantially identical with the temperature coefficient of the semiconductor element in form of a wafer or die. After the cover layer is hardened, the peripheral bead which forms from the emulsion mixture is etched off so that the exposed semiconductor surface, as well as the front side of the semiconductor die or wafer, are ready for epitaxial coating.