Abstract: The invention concerns a semiconductor component and an associated production process having a silicon-bearing layer, a praseodymium oxide layer and a mixed oxide layer arranged between the silicon-bearing layer and the praseodymium oxide layer and containing silicon, praseodymium and oxygen. It is possible because of the mixed oxide layer on the one hand to improve the capacitance of the component and on the other hand to achieve a high level of charge carrier mobility without the necessity for a silicon oxide intermediate layer.

Abstract: The invention concerns a semiconductor component and an associated production process having a silicon-bearing layer, a praseodymium oxide layer and a mixed oxide layer arranged between the silicon-bearing layer and the praseodymium oxide layer and containing silicon, praseodymium and oxygen. It is possible because of the mixed oxide layer on the one hand to improve the capacitance of the component and on the other hand to achieve a high level of charge carrier mobility without the necessity for a silicon oxide intermediate layer.

Abstract: Disclosed is an electronic device with a layer succession of the metal-insulator-metal (MIM) or metal-insulator-semiconductor (MIS) kind. The insulator layer contains or consists of praseodymium titanate. A metal layer or both metal layers contain titanium nitride (TiN), tantalum nitride (TaN) or ruthenium oxide (RuO2) or consist of one of those materials. MIM capacitors for mixed signal and HF applications comprising titanium nitride electrodes and an SiO2/Pr2Ti2O7 layer stack as the dielectric exhibit a high capacitance density of 8 fF/?m2 at the very low VCC of ?40 ppm/V2. The guaranteed operating voltage extrapolated to 10 years is 6 V.

Abstract: In accordance with the invention there is provided a semiconductor capacitor having a first semiconductor layer which forms a first capacitor electrode and which includes silicon, a second capacitor electrode and a capacitor dielectric including praseodymium oxide between the capacitor electrodes, in which provided between the capacitor dielectric including praseodymium oxide and at least the first semiconductor layer including silicon is a first thin intermediate layer representing a diffusion barrier for oxygen. In particular the thin intermediate layer can include oxynitride.

Abstract: A semiconductor component having a silicon-bearing layer and a praseodymium oxide layer, wherein arranged between the silicon-bearing layer and the praseodymium oxide layer is a mixed oxide layer containing silicon, praseodymium and oxygen. The layer is of a thickness of a maximum of 5 nanometers. A production process for such a semiconductor component is also provided. It is possible by means of the mixed oxide layer to improve on the one hand the capacitance of the component in relation to previously known components which contain a silicon oxide intermediate layer. On the other hand a high level of charge carrier mobility is achieved without the necessity for a silicon oxide intermediate layer.

Abstract: In accordance with the invention the semiconductor capacitor includes a first capacitor electrode 1, a second capacitor electrode 3 and a capacitor dielectric 5 which is arranged between the two capacitor electrodes and which includes praseodymium oxide. It is distinguished in that the second capacitor electrode 3 includes praseodymium silicide.

Abstract: In accordance with the invention the semiconductor capacitor includes a first capacitor electrode 1, a second capacitor electrode 3 and a capacitor dielectric 5 which is arranged between the two capacitor electrodes and which includes praseodymium oxide. It is distinguished in that the second capacitor electrode 3 includes praseodymium silicide.

Abstract: In accordance with the invention there is provided a semiconductor capacitor having a first semiconductor layer which forms a first capacitor electrode and which includes silicon, a second capacitor electrode and a capacitor dielectric including praseodymium oxide between the capacitor electrodes, in which provided between the capacitor dielectric including praseodymium oxide and at least the first semiconductor layer including silicon is a first thin intermediate layer representing a diffusion barrier for oxygen. In particular the thin intermediate layer can include oxynitride.