Publication number: 20120032150
Abstract: Semiconductor component comprising: a silicon containing layer (1), at least one graphene layer (3, 3?, 3?, 3?41 ), and a functional layer (2, 2?, 2?, 2??) between the silicon containing layer (1) and the graphene layer (3, 3?, 3?, 3??), wherein the at least one graphene layer (3?, 3?, 3??) is deposited directly on the functional layer (2, 2?, 2?, 2??) to form a layer system (6, 6?, 6?, 6??) with the functional layer (2, 2?, 2?, 2??) , and the functional layer (2, 2?, 2?, 2??) includes at least one dielectric material having a dielectric constant k in a range between K=3 to K=400, and a conductance of the functional layer (2, 2?, 2?, 2??) in the layer system (6, 6?, 6?, 6??) is below a conductance of the graphene layer (3, 3?, 3?, 3??).
Type:
Application
Filed:
June 29, 2011
Publication date:
February 9, 2012
Inventors:
Gunther Lippert, Grzegorz Lupina, Olaf Seifarth, Marvin Zöllner, Hans-Joachim Thieme