Abstract: An integrated rectifier circuit has a doped semiconductor body having first and second oppositely doped regions therein and is covered by an electrically insulating layer on which a first pair of input gate electrodes are disposed which are associated with the first oppositely doped region and on which a second pair of input gate electrodes are disposed associated with the second oppositely doped region. The oppositely doped regions are connected to a clock pulse voltage and all of the input gate electrodes are connected to a constant voltage having a magnitude such that a uniform surface potential exists in the semiconductor regions covered by the electrodes. The input gate electrode of the first pair which is disposed at a greater distance from the first oppositely doped region and the input gate electrode of the second pair which is disposed closer to the second oppositely doped region are charged with the alternating voltage component of an input signal.

Abstract: An MIS-field effect transistor comprising a semiconductor member provided with an overlying insulating layer and having a source zone and a drain zone of a first conductivity type provided with respective contacting electrodes, and a gate-electrode layer disposed therebetween, with each of said areas being surrounded by a less heavily doped area of the same conductivity type. At the source side, an additional area abuts the source zone and extends to the semiconductor surface beneath the gate-electrode layer, forming a channel having a very short length. The various dopings having different penetration depths are produced by differential implantation. A windowed mask, having windows with beveled edges at the drain-zone and the source zone, is utilized as an implantation mask, which advantageously is formed by the insulating layer and/or by the gate-electrode layer.

Abstract: A photographic or electronic camera is disclosed having an optoelectronic distance meter. Linear sensors are provided and by way of partial aperture diaphragms associated with a lens first and second images are created and projectd onto the image sensors. An evaluating circuit, in dependence upon varied position displacements of the sensor signals, determines a maximum correlation between the signals and an associated position displacement with a corresponding electrical value corresponding to distance. A stringing mirror deflects the path of rays either into the view finder or to an image plane for picture taking. The swinging mirror has apertures positioned to permit the first and second bundles of rays to pass therethrough. Deflection elements are attached to the swinging mirror and are positioned to direct the partial bundles of rays passing through the apertures such that the images are projected onto the image sensors.

Abstract: An analog-digital converter is disclosed which monitors an output signal of an optoelectronic sensor element for the attainment or non-attainment of a reference charge, whereupon switchover occurs from one logic signal to the other. An exclusion to a large extent of parameter or characteristic tolerance effects on the result of the evaluation is achieved. For this purpose, the converter contains an inverter, the input of which is connected via a reset transistor with a constant voltage source and which is connected via a potential barrier defining transistor with the output of the sensor element. The converter shows no dependence upon fluctuations of the inverter. Applications include distance measuring devices, and photographic and electronic cameras.

Abstract: An MIS-field effect transistor comprising a semiconductor member provided with an overlying insulating layer and having a source zone and a drain zone of a first conductivity type provided with respective contacting electrodes, and a gate-electrode layer disposed therebetween, with each of said areas being surrounded by a less heavily doped area of the same conductivity type. At the source side, an additional area abuts the source zone and extends to the semiconductor surface beneath the gate-electrode layer, forming a channel having a very short length. The various dopings having different penetration depths are produced by differential implantation. A windowed mask, having windows with beveled edges at the drain-zone and the source zone, is utilized as an implantation mask, which advantageously is formed by the insulating layer and/or by the gate-electrode layer.

Abstract: The invention relates to an optoelectronic sensor with at least one sensor element according to the principle of carrier injection (CID), whereby the surface of a doped semiconductor body is faced by two closely adjoining electrodes insulated from one another and from the semiconductor surface by a thin insulation layer that are controllable via separate control circuits. The semiconductor body contains a more strongly doped area having the type of the semiconductor doping on its surface below one of the electrodes, which area extends slightly into the semiconductor surface lying below the other electrode. Thereby, a narrow potential barrier is formed between the two electrodes, for example, between a line electrode and a column electrode. When an optically generated charge under one electrode is displaced under the other electrode, then this narrow potential barrier prevents a flow back of the charge under the discharged electrode.

Abstract: A transversal filter utilizes a charge transfer device (CTD) shift register having parallel inputs and evaluation circuits assigned to those inputs. The evaluation circuits which form evaluation coefficients by reading-in signal-dependent amounts of charges. The charges are summed in the shift register and the charges successively reaching the output level are read out in series in order to form the filtered output signal. An electric coefficient setting is provided which guarantees a large relative adjustment range having a small requirement for semiconductor surface. The evaluation circuits have separately actuated source zones or additional source zones which are arranged in pairs on opposite sides of the CTD transfer channel, or which are provided with gate oxide and field oxide areas arranged beneath a transfer gate between the evaluation circuits and the shift register. A transversal filter constructed according to the invention is suitable for use as an electrically programmable frequency filter.