Abstract: Two-dimensional chemical maps of a layered nanostructure are reconstructed from selected spectroscopy line scans in a scanning electron microscope. Embodiments include fast two-dimensional scanning a layered nanostructure to form a structure image having multiple layers, slow-rate spectroscopy scanning the nanostructure along selected scanning lines to form chemical profiles, warping the structure image into a warped structure image by flattening each of the layers in the structure image, aligning chemical profiles to the warped structure image, forming warped chemical maps, and inversely transforming the warped chemical maps into two-dimensional chemical maps.

Abstract: Two-dimensional chemical maps of a layered nanostructure are reconstructed from selected spectroscopy line scans in a scanning electron microscope. Embodiments include fast two-dimensional scanning a layered nanostructure to form a structure image having multiple layers, slow-rate spectroscopy scanning the nanostructure along selected scanning lines to form chemical profiles, warping the structure image into a warped structure image by flattening each of the layers in the structure image, aligning chemical profiles to the warped structure image, forming warped chemical maps, and inversely transforming the warped chemical maps into two-dimensional chemical maps.

Abstract: An alloy forming dopant material is deposited prior to the formation of a copper line, for instance by incorporating the dopant material into the barrier layer, which is then driven into the vicinity of a weak interface by means of a heat treatment. As indicated by corresponding investigations, the dopant material is substantially transported to the weak interface through grain boundary regions rather than through the bulk copper material (copper grains), thereby enabling moderately high alloy concentrations in the vicinity of the interface while maintaining a relatively low overall concentration within the grains. The alloy at the interface reduces electromigration along the interface.

Abstract: A lattice distortion may be achieved by incorporating a hydrogen species into a semiconductor material, such as silicon, without destroying the lattice structure. For example, by incorporating the hydrogen species on the basis of an electron shower, a tensile strain component may be obtained in the channel of N-channel transistors.

Abstract: During the formation of a metallization layer of a semiconductor device, a cap layer is formed above a metal line and subsequently an implantation process is performed so as to modify the metal in the vicinity of the interface between the cap layer and the metal line. Consequently, an improved behavior in view of electromigration of the metal line may be obtained, thereby increasing device reliability.

Abstract: An alloy forming dopant material is deposited prior to the formation of a copper line, for instance by incorporating the dopant material into the barrier layer, which is then driven into the vicinity of a weak interface by means of a heat treatment. As indicated by corresponding investigations, the dopant material is substantially transported to the weak interface through grain boundary regions rather than through the bulk copper material (copper grains), thereby enabling moderately high alloy concentrations in the vicinity of the interface while maintaining a relatively low overall concentration within the grains. The alloy at the interface reduces electromigration along the interface.

Abstract: During the formation of a metallization layer of a semiconductor device, a cap layer is formed above a metal line and subsequently an implantation process is performed so as to modify the metal in the vicinity of the interface between the cap layer and the metal line. Consequently, an improved behavior in view of electromigration of the metal line may be obtained, thereby increasing device reliability.

Abstract: A method is provided for preparing a sample for cross-section analysis by a transmission electron microscope. Semiconductor samples containing recessed portions or unfilled structures are filled with a filling material so as to produce a planar top surface onto which a metal layer can be deposited for thinning the sample to a thickness of less than 100 nm by an FIB technique.