Patents by Inventor Hans Juergen Hoene

Hans Juergen Hoene has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8697021
    Abstract: The invention relates to a process for the catalytic hydrodehalogenation of SiCl4 to form HSiCl3, which comprises bringing a gaseous feed mixture comprising hydrogen and silicon tetrachloride into direct contact with at least one heating element of a resistance heating device, with the heating element being composed of a metal or a metal alloy and being heated to carry out the reaction.
    Type: Grant
    Filed: March 10, 2005
    Date of Patent: April 15, 2014
    Assignee: Evonik Degussa GmbH
    Inventors: Klaus Bohmhammel, Sven Koether, Gerhard Roewer, Ingo Roever, Jaroslaw Monkiewicz, Hans-Juergen Hoene
  • Publication number: 20100266489
    Abstract: The invention relates to a method for the treatment of a composition containing inorganic silanes and at least one foreign metal and/or a compound containing a foreign metal, wherein the composition is brought in contact with at least one adsorption agent, and for obtaining the composition, in which the content of foreign metal and/or of a compound containing a foreign metal is reduced, and to a corresponding composition having a reduced foreign metal content, and further to the use of organic resins, activated carbons, silicates, and/or zeolites for the reduction of foreign metals and/or compounds containing foreign metals in compositions of inorganic silanes.
    Type: Application
    Filed: August 20, 2008
    Publication date: October 21, 2010
    Applicant: Evonik Degussa GmbH
    Inventors: Hartwig Rauleder, Ekkehard Mueh, Jaroslaw Monkiewicz, Hans Juergen Hoene, Raymund Sonnenschein
  • Publication number: 20090035205
    Abstract: The invention relates to a process for the catalytic hydrodehalogenation of SiCl4 to HSiCl3 in the presence of hydrogen, in which at least one metal or metal salt selected from among the elements of main group 2 of the Periodic Table of the Elements (PTE) is used as catalyst at a temperature in the range from 300 to 1 000° C. In particular, the catalyst is a metal or metal salt which forms stable metal chlorides under these conditions.
    Type: Application
    Filed: March 1, 2005
    Publication date: February 5, 2009
    Applicant: DEGUSSA AG
    Inventors: Klaus Bohmhammel, Sven Koether, Gerhard Roewer, Ingo Roever, Jaroslaw Monkiewicz, Hans-Juergen Hoene
  • Publication number: 20080289690
    Abstract: The present invention relates to a process for producing a silicon film on a substrate surface by vapor deposition, starting from a silicon-based precursor, characterized in that the precursor used is silicon tetrachloride. The present invention also relates to thin-film solar cells or crystalline silicon thin-film solar cells obtainable by the process according to the invention. The invention also relates to the use of silicon tetrachloride for producing a film deposited on a substrate from the vapor phase.
    Type: Application
    Filed: December 7, 2006
    Publication date: November 27, 2008
    Applicants: EVONIK DEGUSSA GmbH, FRAUNHOFER-GESELL. ZUR FOERD DER ANG. FORS. E.V.
    Inventors: Raymund Sonnenschein, Hartwig Rauleder, Hans Juergen Hoene, Stefan Reber, Norbert Schillinger