Patents by Inventor Hans-Jurgen Lugauer

Hans-Jurgen Lugauer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210288221
    Abstract: In an embodiment, an optoelectronic semiconductor component includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, wherein a respective semiconductor material of the first and second semiconductor layers are each a compound semiconductor material including a first, a second and a third composition element, and a second contact region configured to electrically contact the second semiconductor layer, wherein the first semiconductor layer is patterned and arranged over the second semiconductor layer, wherein the second contact region is arranged between patterned regions of the first semiconductor layer, wherein the second contact region comprises a second metallic contact layer and a semiconductor contact layer between the second metallic contact layer and the second semiconductor layer, wherein a semiconductor material of the semiconductor contact layer includes the first, second and third composition elements, and wherein a concentration
    Type: Application
    Filed: August 9, 2019
    Publication date: September 16, 2021
    Inventors: Mohammad Tollabi Mazraehno, Mariel Grace Jama, Hans-Jürgen Lugauer, Alexander Pfeuffer
  • Publication number: 20210273400
    Abstract: A laser device is provided which comprises a common waveguide layer and a plurality of laser bodies, wherein each of the laser bodies has an active region configured for generating coherent electromagnetic radiation. The laser bodies are arranged side by side on the common waveguide layer, wherein the laser bodies are directly adjacent to the common waveguide layer. In particular, the laser bodies are configured to be phase-coupled to each other via the waveguide layer during operation of the laser device. Furthermore, a method for producing such a phase-coupled laser device is provided.
    Type: Application
    Filed: August 9, 2019
    Publication date: September 2, 2021
    Inventors: Bruno Jentzsch, Alexander Behres, Hans-Jürgen Lugauer
  • Patent number: 11069835
    Abstract: An optoelectronic semiconductor chip and a method for manufacturing a semiconductor chip are disclosed. In an embodiment an optoelectronic semiconductor chip includes a plurality of fins and a current expansion layer for common contacting of at least some of the fins, wherein each fin includes two side surfaces arranged opposite one another and an active region arranged on each of the side surfaces, wherein the plurality of fins include inner fins and outer fins having an adjacent fin only on one side, and wherein the current expansion layer is in direct contact with the inner fins on their outside.
    Type: Grant
    Filed: March 16, 2018
    Date of Patent: July 20, 2021
    Assignee: OSRAM OLED GMBH
    Inventors: Adrian Stefan Avramescu, Tansen Varghese, Martin Straßburg, Hans-Jürgen Lugauer, Sönke Fündling, Jana Hartmann, Frederik Steib, Andreas Waag
  • Publication number: 20200028029
    Abstract: An optoelectronic semiconductor chip and a method for manufacturing a semiconductor chip are disclosed. In an embodiment an optoelectronic semiconductor chip includes a plurality of fins and a current expansion layer for common contacting of at least some of the fins, wherein each fin includes two side surfaces arranged opposite one another and an active region arranged on each of the side surfaces, wherein the plurality of fins include inner fins and outer fins having an adjacent fin only on one side, and wherein the current expansion layer is in direct contact with the inner fins on their outside.
    Type: Application
    Filed: March 16, 2018
    Publication date: January 23, 2020
    Inventors: Adrian Stefan Avramescu, Tansen Varghese, Martin Straßburg, Hans-Jürgen Lugauer, Sönke Fündling, Jana Hartmann, Frederik Steib, Andreas Waag
  • Patent number: 10074769
    Abstract: A method of producing an optoelectronic component includes providing a carrier having a carrier surface, a first lateral section of the carrier surface being raised relative to a second lateral section of the carrier surface; arranging an optoelectronic semiconductor chip having a first surface and a second surface on the carrier surface, wherein the first surface faces toward the carrier surface; and forming a molded body having an upper side facing toward the carrier surface and a lower side opposite the upper side, the semiconductor chip being at least partially embedded in the molded body.
    Type: Grant
    Filed: February 6, 2014
    Date of Patent: September 11, 2018
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Thomas Schwarz, Hans-Jürgen Lugauer, Jürgen Moosburger, Stefan Illek, Tansen Varghese, Matthias Sabathil
  • Patent number: 9853186
    Abstract: The invention relates to a light-emitting semiconductor component, comprising—a first semiconductor body (1), which comprises an active zone (11) in which during the operation of the light-emitting semiconductor component electromagnetic radiation is generated, at least some of which leaves the first semiconductor body (1) through a radiation exit surface (1a), and—a second semiconductor body (2), which is suitable for converting the electromagnetic radiation into converted electromagnetic radiation having a longer wavelength, wherein—the first semiconductor body (1) and the second semiconductor body (2) are produced separately from each other,—the second semiconductor body (2) is electrically inactive, and—the second semiconductor body (2) is in direct contact with the radiation exit surface (1a) and is attached there to the first semiconductor body (1) without connecting means.
    Type: Grant
    Filed: May 2, 2016
    Date of Patent: December 26, 2017
    Assignee: OSRAM OPTO SEMICONDUCTORS GMBH
    Inventors: Matthias Sabathil, Andreas Plöβl, Hans-Jürgen Lugauer, Alexander Linkov, Patrick Rode
  • Patent number: 9812619
    Abstract: The present application relates to a method of producing an optoelectronic component. An optoelectronic is produced by this method. An optoelectronic semiconductor chip has a first surface. A sacrificial layer is deposited on the first surface. The optoelectronic semiconductor chip is at least partially embedded in a mold body and the sacrificial layer is removed.
    Type: Grant
    Filed: January 15, 2014
    Date of Patent: November 7, 2017
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Jürgen Moosburger, Thomas Schwarz, Hans-Jürgen Lugauer, Tansen Varghese, Stefan Illek
  • Patent number: 9786824
    Abstract: A method can be used for producing an optoelectronic component. An optoelectronic semiconductor chip has a front face and a rear face. A sacrificial layer is applied to the rear face. A molded body is formed the optoelectronic semiconductor chip being at least partially embedded in the molded body. The sacrificial layer is removed.
    Type: Grant
    Filed: January 15, 2014
    Date of Patent: October 10, 2017
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Stefan Illek, Hans-Jürgen Lugauer, Jürgen Moosburger, Thomas Schwarz, Tansen Varghese
  • Publication number: 20160247966
    Abstract: The invention relates to a light-emitting semiconductor component, comprising—a first semiconductor body (1), which comprises an active zone (11) in which during the operation of the light-emitting semiconductor component electromagnetic radiation is generated, at least some of which leaves the first semiconductor body (1) through a radiation exit surface (1a), and—a second semiconductor body (2), which is suitable for converting the electromagnetic radiation into converted electromagnetic radiation having a longer wavelength, wherein—the first semiconductor body (1) and the second semiconductor body (2) are produced separately from each other,—the second semiconductor body (2) is electrically inactive, and—the second semiconductor body (2) is in direct contact with the radiation exit surface (1a) and is attached there to the first semiconductor body (1) without connecting means.
    Type: Application
    Filed: May 2, 2016
    Publication date: August 25, 2016
    Inventors: Matthias SABATHIL, Andreas PLÖßL, Hans-Jürgen LUGAUER, Alexander LINKOV, Patrick RODE
  • Patent number: 9331243
    Abstract: The invention relates to a light-emitting semiconductor component, comprising—a first semiconductor body (1), which comprises an active zone (11) in which during the operation of the light-emitting semiconductor component electromagnetic radiation is generated, at least some of which leaves the first semiconductor body (1) through a radiation exit surface (1a), and—a second semiconductor body (2), which is suitable for converting the electromagnetic radiation into converted electromagnetic radiation having a longer wavelength, wherein—the first semiconductor body (1) and the second semiconductor body (2) are produced separately from each other, —the second semiconductor body (2) is electrically inactive, and—the second semiconductor body (2) is in direct contact with the radiation exit surface (1a) and is attached there to the first semiconductor body (1) without connecting means.
    Type: Grant
    Filed: March 7, 2012
    Date of Patent: May 3, 2016
    Assignee: OSRAM OPTO SEMICONDUCTORS GMBH
    Inventors: Matthias Sabathil, Andreas Plöβl, Hans-Jürgen Lugauer, Alexander Linkov, Patrick Rode
  • Publication number: 20160013380
    Abstract: The present application relates to a method of producing an optoelectronic component. An optoelectronic is produced by this method. An optoelectronic semiconductor chip has a first surface. A sacrificial layer is deposited on the first surface. The optoelectronic semiconductor chip is at least partially embedded in a mold body and the sacrificial layer is removed.
    Type: Application
    Filed: January 15, 2014
    Publication date: January 14, 2016
    Inventors: Jürgen Moosburger, Thomas Schwarz, Hans-Jürgen Lugauer, Tansen Varghese, Stefan Illek
  • Publication number: 20160005936
    Abstract: A method can be used for for producing an optoelectronic component. An optoelectronic semiconductor chip has a front face and a rear face. A sacrificial layer is applied to the rear face. A molded body is formed the optoelectronic semiconductor chip being at least partially embedded in the molded body. The sacrificial layer is removed.
    Type: Application
    Filed: January 15, 2014
    Publication date: January 7, 2016
    Inventors: Stefan Illek, Hans-Jürgen Lugauer, Jürgen Moosburger, Thomas Schwarz, Tansen Varghese
  • Publication number: 20150380602
    Abstract: A method of producing an optoelectronic component includes providing a carrier having a carrier surface, a first lateral section of the carrier surface being raised relative to a second lateral section of the carrier surface; arranging an optoelectronic semiconductor chip having a first surface and a second surface on the carrier surface, wherein the first surface faces toward the carrier surface; and forming a molded body having an upper side facing toward the carrier surface and a lower side opposite the upper side, the semiconductor chip being at least partially embedded in the molded body.
    Type: Application
    Filed: February 6, 2014
    Publication date: December 31, 2015
    Applicant: OSRAM Opto Semiconductore GmbH
    Inventors: Thomas Schwarz, Hans-Jürgen Lugauer, Jürgen Moosburger, Stefan Illek, Tansen Varghese, Matthias Sabathil
  • Publication number: 20140070246
    Abstract: The invention relates to a light-emitting semiconductor component, comprising—a first semiconductor body (1), which comprises an active zone (11) in which during the operation of the light-emitting semiconductor component electromagnetic radiation is generated, at least some of which leaves the first semiconductor body (1) through a radiation exit surface (1a), and—a second semiconductor body (2), which is suitable for converting the electromagnetic radiation into converted electromagnetic radiation having a shorter wavelength, wherein—the first semiconductor body (1) and the second semiconductor body (2) are produced separately from each other,—the second semiconductor body (2) is electrically inactive, and—the second semiconductor body (2) is in direct contact with the radiation exit surface (1a) and is attached there to the first semiconductor body (1) without connecting means.
    Type: Application
    Filed: March 7, 2012
    Publication date: March 13, 2014
    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
    Inventors: Matthias Sabathil, Andreas Plößl, Hans-Jürgen Lugauer, Alexander Linkov, Patrick Rode
  • Patent number: 8598596
    Abstract: An optoelectronic semiconductor chip includes a semiconductor layer sequence having at least one doped functional layer having at least one dopant and at least one codopant, wherein the semiconductor layer sequence includes a semiconductor material having a lattice structure, one selected from the dopant and the codopant is an electron acceptor and the other an electron donor, the codopant is bonded to the semiconductor material and/or arranged at interstitial sites, and the codopant at least partly forms no bonding complexes with the dopant.
    Type: Grant
    Filed: October 12, 2009
    Date of Patent: December 3, 2013
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Vincent Grolier, Lutz Hoeppel, Hans-Jürgen Lugauer, Martin Strassburg, Andreas Biebersdorf
  • Patent number: 8592840
    Abstract: An optoelectronic semiconductor chip includes an epitaxially grown semiconductor layer sequence based on GaN, InGaN, AlGaN and/or InAlGaN, a p-doped layer sequence, an n-doped layer sequence, an active zone that generates an electromagnetic radiation and is situated between the p-doped layer sequence and the n-doped layer sequence, and at least one AlxGa1-xN-based intermediate layer where 0<x?1, which is situated at a same side of the active zone as the n-doped layer sequence.
    Type: Grant
    Filed: December 20, 2010
    Date of Patent: November 26, 2013
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Matthias Peter, Tobias Meyer, Nikolaus Gmeinwieser, Tetsuya Taki, Hans-Jürgen Lugauer, Alexander Walter
  • Patent number: 8436393
    Abstract: A light-emitting diode chip comprises a GaN-based, radiation-emitting epitaxial layer sequence, an active region, an n-doped layer and a p-doped layer. The p-doped layer is provided, on its main surface facing away from the active region, with a reflective contact metallization comprising a radioparent contact layer and a reflective layer. Methods for fabricating LED chips of this type by thin-film technology are provided, as are LED components containing such LED chips.
    Type: Grant
    Filed: April 4, 2011
    Date of Patent: May 7, 2013
    Assignee: Osram GmbH
    Inventors: Berthold Hahn, Ulrich Jacob, Hans-Jürgen Lugauer, Manfred Mundbrod-Vangerow
  • Patent number: 8420439
    Abstract: A method of producing a radiation-emitting thin film component includes providing a substrate, growing nanorods on the substrate, growing a semiconductor layer sequence with at least one active layer epitaxially on the nanorods, applying a carrier to the semiconductor layer sequence, and detaching the semiconductor layer sequence and the carrier from the substrate by at least partial destruction of the nanorods.
    Type: Grant
    Filed: October 19, 2009
    Date of Patent: April 16, 2013
    Assignee: OSRAM Opto Semiconductors GmbH
    Inventors: Hans-Jürgen Lugauer, Klaus Streubel, Martin Strassburg, Reiner Windisch, Karl Engl
  • Publication number: 20120313138
    Abstract: An optoelectronic semiconductor chip includes an epitaxially grown semiconductor layer sequence based on GaN, InGaN, AlGaN and/or InAlGaN, a p-doped layer sequence, an n-doped layer sequence, an active zone that generates an electromagnetic radiation and is situated between the p-doped layer sequence and the n-doped layer sequence, and at least one AlxGa 1-xN-based intermediate layer where 0<x?1, which is situated at a same side of the active zone as the n-doped layer sequence.
    Type: Application
    Filed: December 20, 2010
    Publication date: December 13, 2012
    Applicant: OSRAM Opto Semiconductors GmbH
    Inventors: Matthias Peter, Tobias Meyer, Nikolaus Gmeinwieser, Tetsuya Taki, Hans-Jürgen Lugauer, Alexander Walter
  • Publication number: 20110278641
    Abstract: An optoelectronic semiconductor chip includes a semiconductor layer sequence having at least one doped functional layer having at least one dopant and at least one codopant, wherein the semiconductor layer sequence includes a semiconductor material having a lattice structure, one selected from the dopant and the codopant is an electron acceptor and the other an electron donor, the codopant is bonded to the semiconductor material and/or arranged at interstitial sites, and the codopant at least partly forms no bonding complexes with the dopant.
    Type: Application
    Filed: October 12, 2009
    Publication date: November 17, 2011
    Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
    Inventors: Vincent Grolier, Lutz Hoeppel, Hans-Jürgen Lugauer, Martin Strassburg, Andreas Biebersdorf