Abstract: A lithographic apparatus having a controller that sets at lest one system parameter such that the difference between the critical dimension of pattern features formed on the substrate in regions of relatively high and relatively low pattern feature density is minimised for an area on the substrate on which a patterned beam of radiation is to be projected and which re-sets the at least one system parameter between a projection of the patterned radiation beam onto two areas of the substrate.

Abstract: A metrology apparatus for measuring a parameter of a microscopic structure on a substrate, the apparatus comprising a supercontinuum light source arranged to generate a measurement beam, an optical system arranged to direct the measurement beam onto the substrate and a sensor for detecting radiation reflected and/or diffracted by the structure.

Abstract: A lithographic apparatus includes an illuminator configured to condition a beam of radiation and a support configured to hold a patterning device. The patterning device is configured to pattern the beam of radiation according to a desired pattern. The lithographic apparatus also includes a substrate table configured to hold a substrate and a projection system configured to project the patterned beam onto a target portion of the substrate to form a patterned image on the substrate. The apparatus further includes a sensor configured and arranged to intercept a portion of the beam and to measure a transmission of the beam through at least a portion of the patterning device.

Abstract: A lithographic apparatus comprises an illumination system for providing a projection beam of radiation, a support structure for supporting patterning device, the patterning device serving to transmit or reflect radiation in the projection beam and impart the projection beam with a pattern in its cross-section, a substrate table for holding a substrate, and a projection system for projecting the patterned beam onto a target portion of the substrate. A sensor is provided for measuring the spatial intensity distribution of the projection beam at the substrate. The spatial distribution of transmission or reflectance of the patterning device, together with the distribution of the projection beam incident on the patterning device, may be determined from the measured intensity distribution. By comparing the transmission or reflectance from regions having identical patterns the overall (macroscopic) distribution of the transmission or reflectance of the patterning device can be determined.

Abstract: To calibrate a lithographic apparatus contrast in the aerial image is measured for a plurality of different settings of available manipulators of the projection system. Appropriate settings of the manipulators are determined as those giving the maximum contrast values.

Abstract: A method according to an embodiment includes obtaining calibration measurement data, with an optical detection apparatus, from a plurality of marker structure sets provided on a calibration substrate. Each marker structure set includes at least one calibration marker structure created using different known values of the process parameter. The method includes obtaining measurement data, with the optical detection apparatus, from at least one marker structure provided on a substrate and exposed using an unknown value of the process parameter; and determining the unknown value of the process parameter from the obtained measurement data by employing regression coefficients in a model based on the known values of the process parameter and the calibration measurement data.