Abstract: Method to implement heat dissipation multilayer and reduce thermal boundary resistance for high power consumption semiconductor devices is provided. The heat dissipation multilayer comprises a first crystalline layer that possesses a first phonon frequency range, a second crystalline layer that has a second phonon frequency range which does not overlap with the first phonon frequency range, and an amorphous layer located between the first and second crystalline layers. The amorphous layer has a third phonon frequency range that overlaps both the first and second phonon frequency ranges.

Abstract: A midsole includes a midsole body and a resilient plate disposed in the midsole body in a manner that the resilient plate extends along a longitudinal direction. The resilient plate includes a plurality of resilient tubular elements that are integrally connected to each other along the longitudinal direction. Each of the resilient tubular elements extends along a width direction perpendicular to the longitudinal direction. A shoe includes an upper, an outsole, and the aforementioned midsole which is connected between the upper and the outsole.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate; a dielectric layer on the substrate; isolation structures extending through the dielectric layer into the substrate; and a floating gate on the dielectric layer and between the isolation structures, wherein the floating gate includes a first portion directly on the dielectric layer; and second portions on the sidewalls of the first portion.

Abstract: Some embodiments relate to an IC device, including a first chip comprising a plurality of pixel blocks respectively including one of a first plurality of conductive pads, the plurality of pixel blocks arranged in rows extending in a first direction and columns extending in a second direction perpendicular to the first direction; a second chip bonded to the first chip at a bonding interface, where the second chip comprises a second plurality of conductive pad recessed and contacting the first plurality of conductive pads along the bonding interface; and a first corrugated shield line having outermost edges set-back along the second direction from outermost edges of a first row of the plurality of pixel blocks, the first corrugated shield line being arranged within a first dielectric layer and laterally separating neighboring ones of the first plurality of conductive pads within the first row of the plurality of pixel blocks.

Abstract: A semiconductor structure including a device wafer, a carrier structure, and a redistribution layer (RDL) structure is provided. The device wafer includes a first substrate, a first dielectric layer, first bonding pads, and a power via structure. The carrier structure includes the following components. A second substrate has a third surface and a fourth surface opposite to each other. A second dielectric layer is located on the third surface. Second bonding pads are located in the second dielectric layer. The second bonding pads are bonded to the first bonding pad, and the second dielectric layer is bonded to the first dielectric layer. A heat dissipation plate is located on the fourth surface. Through-substrates via (TSVs) pass through the second substrate. The TSV is electrically connected to the heat dissipation plate and the second bonding pad. The RDL structure is electrically connected to the power via structure.

Abstract: A ferroelectric memory structure including a substrate, a ferroelectric capacitor structure, and a switch device is provided. The ferroelectric capacitor structure is disposed on the substrate. The ferroelectric capacitor structure includes at least one first electrode, first dielectric layers, a second electrode, and a ferroelectric material layer. The at least one first electrode and the first dielectric layers are alternately stacked. The second electrode penetrates through the first electrode. The ferroelectric material layer is disposed between the first electrode and the second electrode. The switch device is electrically connected to the ferroelectric capacitor structure.

Abstract: Disclosed herein are pigment compositions for meat substitutes and meat substitutes including such pigment compositions. The pigment compositions include a non-heme iron-binding protein. The pigment compositions provide a pink and/or red color to a meat substitute composition. For example, the non-heme iron-binding protein my include a sequence at least 60%, at least 70%, at least 80%, at least 85%, at least 90%, at least 95%, at least 98%, or at least 99% identical to at least one of SEQ ID NOs: 1-31.

Abstract: Provided are a memory device and a method of manufacturing the same. The memory device includes: a stack structure; a first source/drain region and a second source/drain region located in a substrate beside the stack structure; a first self-aligned contact connected to the first source/drain region; a second self-aligned contact connected to the second source/drain region; a first liner structure located between the first self-aligned contact and a first sidewall of the stack structure; and a second liner structure located between the second self-aligned contact and a second sidewall of the stack structure. The first liner structure and the second liner structure are not connected and do not cover the stack structure.

Abstract: A method and an apparatus for integrated circuit testing are provided. The method includes: operating a tester to perform a qualitative testing on devices in the integrated circuit by following electrical addresses of the devices, and to introduce an original verification pattern during the qualitative testing, such that a verification pattern corresponding to the original verification pattern can be converted from a raw data of a result of the qualitative testing; converting the raw data to a test graph presented by physical addresses, by using pre-determined scramble equations; and identifying portions of the verification pattern appeared in the test graph and comparing the portions of the verification pattern with corresponding portions of the original verification pattern by pattern recognition, and correcting the pre-determined scramble equations according to comparison result.

Abstract: A method and an apparatus for integrated circuit testing are provided. The method includes: operating a tester to perform a qualitative testing on devices in the integrated circuit by following electrical addresses of the devices, and to introduce an original verification pattern during the qualitative testing, such that a verification pattern corresponding to the original verification pattern can be converted from a raw data of a result of the qualitative testing; converting the raw data to a test graph presented by physical addresses, by using pre-determined scramble equations; and identifying portions of the verification pattern appeared in the test graph and comparing the portions of the verification pattern with corresponding portions of the original verification pattern by pattern recognition, and correcting the pre-determined scramble equations according to comparison result.

Abstract: Provided are a memory device and a method of manufacturing the same. The memory device includes: a stack structure; a first source/drain region and a second source/drain region located in a substrate beside the stack structure; a first self-aligned contact connected to the first source/drain region; a second self-aligned contact connected to the second source/drain region; a first liner structure located between the first self-aligned contact and a first sidewall of the stack structure; and a second liner structure located between the second self-aligned contact and a second sidewall of the stack structure. The first liner structure and the second liner structure are not connected and do not cover the stack structure.

Abstract: An ambient light sensor includes a substrate, a metasurface disposed on the substrate, and an aperture layer disposed on the substrate. The metasurface includes a plurality of nanostructures and a filling layer laterally surrounding the plurality of nanostructures. The aperture layer laterally separates the metasurface into a plurality of sub-meta groups.

Abstract: The method of forming the semiconductor structure includes the following steps. First trenches and second trenches are respectively formed in a substrate of the logic region and the substrate of the array region. A dielectric liner is formed in the first trenches and second trenches. First coating blocks and second coating blocks are respectively formed in the first trenches and second trenches. A cap layer is formed on the first coating blocks and the second coating blocks. Oxide structures are formed on the cap layer. Part of the oxide structures and part of the cap layer is removed. A semiconductor layer is formed in the array region and disposed on the substrate and between the oxide structures.

Abstract: A bead product is provided. The bead product comprises a plurality of beads, each of the plurality of beads having a first surface facing a first direction opposing a second surface facing a second direction; a plurality of holding members, one of the plurality of holding members disposed within or attached to the plurality of beads; a framework formed from the holding member and the plurality of beads, the framework having a first configuration and a second configuration; and a locking mechanism, the locking mechanism locks positions of the holding member, the plurality of beads or both on the framework in the first configuration and the locking mechanism unlocks only a predetermined bead of the plurality beads for movement on the framework in the second configuration. Systems and methods are disclosed.

Abstract: An ambient light sensor includes a substrate, a metasurface disposed on the substrate, and an aperture layer disposed on the substrate. The metasurface includes a plurality of nanostructures and a filling layer laterally surrounding the plurality of nanostructures. The aperture layer laterally separates the metasurface into a plurality of sub-meta groups.

Abstract: An interconnect structure including a dielectric structure, plugs, and conductive lines is provided. The dielectric structure is disposed on a substrate. The plugs are disposed in the dielectric structure. The conductive lines are disposed in the dielectric structure and are electrically connected to the plugs. The sidewall of at least one of the conductive lines is in direct contact with the dielectric structure.

Abstract: A CMOS image sensor with 3D monolithic OSFET and FEMIM capacitor, including a substrate with CMOS devices formed thereon, a BEOL interconnect layer on the substrate and with BEOL interconnects formed therein, a pixel circuit layer on the BEOL interconnect layer. The OSFETs and FEMIM capacitors are formed in the pixel circuit layer, and a photoelectric conversion layer on the pixel circuit layer and with photodiodes are formed therein, wherein the CMOS devices, the OSFETs, FEMIM capacitors and photodiodes are electrically connected with each other through the BEOL interconnects.

Abstract: Disposed are a semiconductor structure, a manufacturing method thereof and a flash memory. The semiconductor structure includes a substrate, first isolation structures, a gate structure and an oxide layer. The first isolation structures define a first active area in a peripheral region of the substrate. The oxide layer is disposed on the substrate in the first active area and covered by the first isolation structures. The oxide layer and the first isolation structures define an opening exposing the substrate. The gate structure is disposed on the substrate in the first active area and includes a gate dielectric layer disposed in the opening and a gate disposed on the gate dielectric layer. The oxide layer is located around the gate dielectric layer. The width of the bottom surface of the gate is less than that of the top surface of the first active area.

Abstract: A method of forming a semiconductor structure includes forming first to third sacrificial layers on a substrate including a memory cell area and a peripheral area with a word line area. The second and third sacrificial layers in the word line area are removed to expose the top surface of the first sacrificial layer. The first sacrificial layer in the word line area and the third sacrificial layer in the memory cell area are removed. A word line dielectric layer and a first conductive layer are formed on the substrate in the word line area. The first and second sacrificial layers in the memory cell area are removed. A tunneling dielectric layer is formed on the substrate in the memory cell area. The thickness of the tunneling dielectric layer is smaller than the thickness of the word line dielectric layer.

Abstract: A resistive memory apparatus including bit lines, word lines, a memory array, bypass paths, select circuits, and a switch circuit is provided. The word lines are respectively crossed with the bit lines. The memory array includes memory elements. One end of each of the memory elements is coupled to the corresponding word line, and another end of each of the memory elements is coupled between a first node and a second node on the corresponding bit line. Each of the bypass paths is connected in parallel with the corresponding bit line between the first node point and the second node. Each of the select circuits is coupled to the corresponding bit line and bypass path, and configured to select the coupled bit line or bypass path. The switch circuit is coupled to the word lines, and configured to select one of the word lines.