Abstract: An image sensor includes: a plurality of sensing portions; a color filter layer disposed on the sensing portions; and a micro-lens disposed on the color filter layer. The micro-lens includes a positive radius of curvature, and a dish structure including a negative radius of curvature is formed within the micro-lens.

Abstract: An optical engine device with a heat dissipation function suitable for providing projection light of a projector includes a heat conductive casing, a phosphor wheel structure and a heat dissipation module. The phosphor wheel structure is disposed in the heat conductive casing. The heat dissipation module includes a channel member and a flow generation device. The channel member is disposed corresponding to the phosphor wheel structure in the heat conductive casing and has a guide channel and a nozzle extending from an outlet of the guide channel and facing a back side of the phosphor wheel structure. The flow generation device is connected to an inlet of the guide channel to generate an airflow flowing into the guide channel and passing through the nozzle for forming an impact flow toward the back side of the phosphor wheel structure.

Abstract: A rotating shaft device includes a base, a rotation member, a slide member, a supporting member, and a linkage unit. The rotation member is rotatable relative to the base between a first position and a second position. The slide member is slidable relative to the base. The supporting member is pivotable relative to the base between an initial position and a supporting position. The linkage unit is convertible between a folded state and an expanded state. When the rotation member is in the first position, the linkage unit is in the folded state and the supporting member is in the initial position. When the rotation member is rotated to the second position, the slide member is urged by the rotation member to slide and to convert the linkage unit into the expanded state, and the supporting member is urged by the linkage unit to pivot to the supporting position.

Abstract: A method for controlling a warehouse robot to store or retrieve an inventory item on a shelf. The method includes: receiving an instruction to transport the inventory item, obtaining a position of the inventory item from the received instruction, directing the warehouse robot to move to the location of the inventory item, detecting a position shift of the inventory item away from the obtained position based on the location and the orientation of the inventory item, adjusting a position of the warehouse robot to compensate for the position shift, retrieving the inventory item from storage, and transporting the inventory item to a destination.

Abstract: A method is provided in which a monitor cell is made that is substantially identical to the flash memory cells of an embedded memory array. The monitor cell is formed simultaneously with the cells of the memory array, and so in certain critical aspects, is exactly comparable. An aperture is formed that extends through the control gate and intervening dielectric to the floating gate of the monitor cell. To prevent silicide contamination during a subsequent CMP process, a silicide protection layer (SPL), such as a resist protective oxide, is formed over exposed portions of the control gate prior to formation of a silicide contact formed on the floating gate. The SPL is formed simultaneously with existing manufacturing processes to avoid additional process steps.

Abstract: Provided are a semiconductor device and a method for forming the same. The semiconductor device includes a substrate including first and second active regions defined by an element isolation structure, a first element in the first active region and including a gate structure on the substrate, a second element in the second active region and including an insulation pattern in the substrate and including a first portion and a second portion surrounding the first portion, and a dummy gate structure in the second active region and including first and second patterns respectively on the first and second portions and a third pattern on the device isolation structure. The second portion and the element isolation structure define a region where a first doped region of the second element is formed. The second portion and the first portion define a region where a second doped region of the second element is formed.

Abstract: A rotating shaft device includes a base, a rotation member, a slide member, a resistance-providing member, a supporting member, and a linkage unit. The rotation member is rotatable relative to the base between a first rotation position and a second rotation position. The slide member is slidable relative to the base between a first slide position and a second slide position. The resistance-providing member prevents the slide member from moving toward the first slide position when the slide member is in the second slide position. The supporting member is movable relative to the base between an initial position and a supporting position. The linkage unit is convertible between a folded state and an expanded state. When the rotation member is in the first rotation position, the slide member, the linkage unit, and the supporting member are respectively in the first slide position, the folded state, and the initial position.

Abstract: A semiconductor device includes a first conductive structure extending along a vertical direction and a second conductive structure extending along the vertical direction. The second conductive structure is spaced apart from the first conductive structure along a first lateral direction. The semiconductor device includes third conductive structures each extending along the first lateral direction. The third conductive structures are disposed across the first and second conductive structures. The semiconductor device includes a first semiconductor channel extending along the vertical direction. The first semiconductor channel is disposed between the third conductive structures and the first conductive structure, and between the third conductive structures and the second conductive structure. The first and second conductive structures each have a first varying width along the first lateral direction, and the first semiconductor channel has a second varying width along a second lateral direction.

Abstract: A semiconductor device comprises a first conductive structure extending along a vertical direction and a second conductive structure extending along the vertical direction. The second conductive structure is spaced apart from the first conductive structure along a lateral direction. The semiconductor device further comprises a plurality of third conductive structures each extending along the lateral direction. The plurality of third conductive structures are disposed across the first and second conductive structures. The first and second conductive structures each have a varying width along the lateral direction. The plurality of third conductive structures have respective different thicknesses in accordance with the varying width of the first and second conductive structures.

Abstract: A semiconductor device includes a first conductor structure extending along a lateral direction. The semiconductor device includes a first memory film that extends along a vertical direction and is in contact with the first conductor structure. The semiconductor device includes a first semiconductor film that extends along the vertical direction and is in contact with the first memory film. Ends of the first semiconductor film align with ends of the first memory film, respectively. The semiconductor device includes a second conductor structure extending along the vertical direction. The semiconductor device includes a third conductor structure extending along the vertical direction. The semiconductor device includes a fourth conductor structure extending along the vertical direction. The second and fourth conductor structures are coupled to the ends of the first semiconductor film, and the third conductor structure is coupled to a portion of the first semiconductor film between its ends.

Abstract: A method of manufacturing a Schottky barrier diode includes: forming a first well region and a second well region adjacent to the first well region in a substrate; depositing a first dielectric layer over the first well region and the second well region; performing a first patterning operation on the first dielectric layer to cause the first dielectric layer to include a stepped shape; performing a second patterning operation on the first dielectric layer to form a gate dielectric layer of a first transistor device in the second well region; and forming a conductive layer over the first well region to obtain a Schottky barrier interface.

Abstract: A semiconductor device is described. An isolation region is disposed on the substrate. A plurality of channels extend through the isolation region from the substrate. The channels including an active channel and an inactive channel. A dummy fin is disposed on the isolation region and between the active channel and the inactive channel. An active gate is disposed over the active channel and the inactive channel, and contacts the isolation region. A dielectric material extends through the active gate and contacts a top of the dummy fin. The inactive channel is a closest inactive channel to the dielectric material. A long axis of the active channel extends in a first direction. A long axis of the active gate extends in a second direction. The active channel extends in a third direction from the substrate. The dielectric material is closer to the inactive channel than to the active channel.

Abstract: An alignment structure for a semiconductor device and a method of forming same are provided. A method includes forming an isolation region over a substrate and forming an alignment structure over the isolation region. Forming the alignment structure includes forming a sacrificial gate electrode layer over the substrate and the isolation region. The sacrificial gate electrode layer is patterned to form a plurality of first sacrificial gates over the isolation region. At least one of the plurality of first sacrificial gates is reshaped. The at least one of the plurality of first sacrificial gates is disposed at an edge of the alignment structure in a plan view. A sidewall of the at least one of the plurality of first sacrificial gates comprises a notch at an interface between the at least one of the plurality of first sacrificial gates and the isolation region.

Abstract: A device is described that includes a lens, a photonic substrate, and a surface emitting laser mounted and a set of photodetectors mounted on the photonic substrate. The photonic substrate includes a first surface coupler, a second surface coupler, and an interference coupler. The surface emitting laser emits electromagnetic radiation that is modulated according to a continuous wave frequency modulation. The first surface coupler directs a local oscillator portion of the electromagnetic radiation toward the set of photodetectors. The second surface coupler directs, toward the set of photodetectors, a signal portion of the electromagnetic radiation that is reflected from a target and received via the lens. The interference coupler optically interferes the local oscillator portion from the first surface coupler with the signal portion from the second surface coupler to generate a set of optical outputs that are provided to the set of photodetectors.

Abstract: This disclosure relates to a combined power module that includes a base structure, a terminal structure, a second terminal, and a cover. The terminal structure includes a mount assembly and a plurality of first terminals. The mount assembly is assembled on the base structure. The first terminals are disposed on the mount assembly. The second terminal is disposed on the base structure. The cover is disposed on the base structure and covers at least part of the first terminals and at least part of the second terminal.

Abstract: A power module with detachable function is provided. The power module includes a housing box part, a power component, a housing cover part, and a sensing component. The sensing component is configured to measure parameters of the power component and detachably installed on the housing cover part and the housing box part. When the housing cover part is mounted on the housing box part, the housing cover part and the housing box part can restrict the movement of the sensing component. Thus, a tight fit can be achieved.

Abstract: An electronic device including a first body, a keyboard, a light-emitting touch pad module, a light-transmitting cover and a second body is provided. The first body has a first area and a second area arranged side by side. The keyboard is disposed in the first area. The light-emitting touch pad module is slidably disposed in the second area. The light-transmitting cover is disposed on the second area and covers the light-emitting touch pad module. The light-emitting touch pad module displays a drifting touch area on the light-transmitting cover. The second body is pivotally connected to the first body.