Abstract: The invention relates to a multi-beam deflector array device for use in a particle-beam exposure apparatus employing a beam of charged particles, the multi-beam deflector array device having a plate-like shape with a membrane region, the membrane region including a first side facing towards the incoming beam of particles, an array of apertures, each aperture allowing passage of a corresponding beamlet formed out of the beam of particles, a plurality of depressions, each depression being associated with at least one aperture, and an array of electrodes, each aperture being associated with at least one electrode and each electrode being located in a depression, the electrodes being configured to realize a non-deflecting state, wherein the particles that pass through the apertures are allowed to travel along a desired path, and a deflecting state, wherein the particles are deflected off the desired path.

Abstract: A charged-particle multi-beam exposure apparatus (1) for exposure of a target (41) uses a plurality of beams of electrically charged particles, which propagate along parallel beam paths towards the target (41). For each particle beam an illumination system (10), a pattern definition means (20) and a projection optics system (30) are provided. The illuminating system (10) and/or the projection optics system (30) comprise particle-optical lenses having lens elements (L1, L2, L3, L4, L5) common to more than one particle beam. The pattern definition means (20) defines a multitude of beamlets in the respective particle beam, forming its shape into a desired pattern which is projected onto the target (41), by allowing it to pass only through a plurality of apertures defining the shape of beamlets permeating said apertures, and further comprises a blanking means to switch off the passage of selected beamlets from the respective paths of the beamlets.

Abstract: A charged-particle multi-beam exposure apparatus (1) for exposure of a target (41) uses a plurality of beams of electrically charged particles, which propagate along parallel beam paths towards the target (41). For each particle beam an illumination system (10), a pattern definition means (20) and a projection optics system (30) are provided. The illuminating system (10) and/or the projection optics system (30) comprise particle-optical lenses having lens elements (L1, L2, L3, L4, L5) common to more than one particle beam. The pattern definition means (20) defines a multitude of beamlets in the respective particle beam, forming its shape into a desired pattern which is projected onto the target (41), by allowing it to pass only through a plurality of apertures defining the shape of beamlets permeating said apertures, and further comprises a blanking means to switch off the passage of selected beamlets from the respective paths of the beamlets.

Abstract: Method of synthesising carbon nano tubes (CNTs) on a catalyst layer formed on a support member, by catalytic deposition of carbon from a gaseous phase, whereby an ion beam is used prior to, during and/or after formation of said carbon nano tubes for modifying the physical, chemical and/or conductive properties of said carbon nano tubes.

Abstract: In a particle multibeam lithography apparatus an illumination system (242) having a particle source (203) produces an illuminating beam (205) of electrically charged particles, and a multibeam optical system (208) positioned after the illumination system (242) and comprising at least one aperture plate having an array of a plurality of apertures to form a plurality of sub-beams focuses the sub-beams onto the surface of a substrate (220), wherein for each sub-beam (207) a deflection unit (210) is positioned within the multibeam optical system and adapted to correct individual imaging aberrations of the respective sub-beam with respect to the desired target position and/or position the sub-beam during a writing process an the substrate surface.

Abstract: A charged-particle multi-beam exposure apparatus (1) for exposure of a target (41) uses a plurality of beams of electrically charged particles, which propagate along parallel beam paths towards the target (41). For each particle beam an illumination system (10), a pattern definition means (20) and a projection optics system (30) are provided. The illuminating system (10) and/or the projection optics system (30) comprise particle-optical lenses having lens elements (L1, L2, L3, L4, L5) common to more than one particle beam. The pattern definition means (20) defines a multitude of beamlets in the respective particle beam, forming its shape into a desired pattern which is projected onto the target (41), by allowing it to pass only through a plurality of apertures defining the shape of beamlets permeating said apertures, and further comprises a blanking means to switch off the passage of selected beamlets from the respective paths of the beamlets.

Abstract: An apparatus for masked ion-beam lithography comprises a mask maintenance module for prolongation of the lifetime of the stencil mask. The module comprises a deposition means for depositing material to the side of the mask irradiated by the lithography beam, with at least one deposition source being positioned in front of the mask, and further comprises a sputter means in which at least one sputter source, positioned in front of the mask holder means and outside the path of the lithography beam, produces a sputter ion beam directed to the mask in order to sputter off material from said mask in a scanning procedure and compensate for inhomogeneity of deposition.

Abstract: For producing a superconducting circuit, a film (12) consisting of a cuprate superconductor material is generated on a substrate (13), wherein the superconductor material is in the superconducting state at an operating temperature of the superconducting circuit to be produced, and then the film is irradiated by projecting an energetic ion radiation onto the film through a mask (11) positioned at a distance from the film and protecting selected areas of the film from being irradiated, the mask comprising a structure pattern transparent to the ion radiation but otherwise opaque to the ion radiation. Areas (14) not protected by the mask are irradiated with an ion dose being sufficiently low to avoid degradation of the crystal structure of the first film but being sufficient to inhibit superconductivity of the film with respect to the operating temperature; ion doses are preferably in the range of 0.8·1015 and 2·1015 ions/cm2 or below.

Abstract: In a particle projection lithography system, an alignment system is used to determine alignment parameters to measure the position and shape of an optical image of a pattern of structures formed in a mask and imaged onto a target by means of a broad particle beam, by means of an apparatus with a plurality of alignment marks adapted to produce secondary radiation upon irradiation with radiation of said particle beam. In order to allow for a variation of the alignment parameters along the optical axis, the alignment marks are positioned outside the aperture of the alignment system for the part of the beam that generates said optical image, arranged at positions to coincide with particle reference beams projected through reference beam forming structures provided on the mask while said optical image is projected onto the target, and situated on at least two different levels over the target as seen along the directions of the respective reference beams.

Abstract: In a particle multibeam lithography apparatus an illumination system (242) having a particle source (203) produces an illuminating beam (205) of electrically charged particles, and a multibeam optical system (208) positioned after the illumination system (242) and comprising at least one aperture plate having an array of a plurality of apertures to form a plurality of sub-beams focuses the sub-beams onto the surface of a substrate (220), wherein for each sub-beam (207) a deflection unit (210) is positioned within the multibeam optical system and adapted to correct individual imaging aberrations of the respective sub-beam with respect to the desired target position and/or position the sub-beam during a writing process an the substrate surface Preferably, for each sub-beam the respective aperture of the first aperture plate defines the size and shape of the sub-beam cross-section and the multibeam optical system produces a demagnified image of the aperture on the substrate surface, with a demagnification of at

Abstract: A field-ionization source, comprising array of emitter electrodes (31) and counter electrodes (32) positioned at a distance from the base (P1) of the emitter electrodes. The emitter electrodes, ending in emitter tips (61), extend from their bases towards corresponding openings (62) of the counter electrodes and are adapted to be connected to a positive electric high voltage with respect to the counter electrodes. At the emitter tips (61), gas species provided from a source substance are field-ionized by means of the high voltage and ions thus produced are accelerated through the openings (61, 41). A distribution system (43, S2) is provided to distribute said source substance from a supply to the space (S1) around the emitter tips.

Abstract: In order to increase the rigidity of a membrane mask that can be used for ion projection lithography, a second wafer made of the material of the membrane layer is provided in addition to a first wafer. The second wafer is patterned in the same way as the first wafer to form a second carrying ring and is fitted on the membrane layer in a mirror-inverted manner with respect to the first wafer so that the membrane area is arranged between the first and second carrying rings in a centered manner in the direction perpendicular to the membrane plane.

Abstract: In a particle projection lithography system, an alignment system is used to determine alignment parameters to measure the position and shape of an optical image of a pattern of structures formed in a mask and imaged onto a target by means of a broad particle beam, by means of an apparatus with a plurality of alignment marks adapted to produce secondary radiation upon irradiation with radiation of said particle beam. In order to allow for a variation of the alignment parameters along the optical axis, the alignment marks are positioned outside the aperture of the alignment system for the part of the beam that generates said optical image, arranged at positions to coincide with particle reference beams projected through reference beam forming structures provided on the mask while said optical image is projected onto the target, and situated on at least two different levels over the target as seen along the directions of the respective reference beams.

Abstract: A particle beam lithography method for imaging a structure pattern onto one or more fields on a substrate (11) by means of electrically charged particles, e.g. ions, in which a particle beam is shaped into a desired beam pattern by means of a mask positioned in the particle beam, converted into a beam pattern by apertures in the mask and projected onto the substrate to form an image of the mask apertures. According to the invention, a plurality of masks is positioned on one mask carrier, thus offering a plurality of aperture patterns which are used for producing structure patterns to be imaged onto respective areas (S) of the substrate. The patterns thus imaged, as a whole, combine together to form e.g. the total pattern of a die-field (D) of the substrate (11).

Abstract: The invention relates to a method for producing a structured layer of defined functional molecules on the surface of a flat substrate, on the surface of which structures having different surface properties, at least as regards their hydrophobicity, are produced. A monolayer of a protein-containing crystalline cell surface layer (S layer) is deposited by recrystallization on said structured surface. Said S Layer binds only to those structured areas of the surface characterized by raised hydrophobicity. Alternatively, a structured S-layer may also be produced on the basis of a monolayer of an S layer deposited on a substrate by irradiating predefined sections of said layer to be structured with radiation of a predetermined intensity and energy. In the irradiated sections of the S-layer this suppresses the binding or intercalating ability of at least one surface.

Abstract: A method for the purpose of producing a stencil mask, which comprises a sheet having structures in the form of orifices, wherein the method comprises the following sequence of steps:a) selecting a planar, two-dimensional substrate consisting of a specific material comprising a thickness greater than 50 .mu.m,b) producing a thin layer, the so-called intermediate layer on the upper side of the substrate,c) structuring this intermediate layer by means of a lithographic process with the structures for the mask which is to be produced,d) etching the lower side of the substrate at least in the region of the structures provided for the mask orifices, until the substrate comprises in this region a predetermined membrane thickness less than 50 .mu.m,e) etching the upper side of the membrane using the structured intermediate layer as a masking layer, in order to form in this membrane the orifices of the mask which orifices correspond to the structures of the intermediate layer, andf) removing the intermediate layer.

Abstract: In order to process a carbon film carbon is deposited on a substrate by sputtering from a carbon sputter target in a gas mixture which contains nitrogen in a minimum proportion of 20% and a sputter gas at a predetermined gas pressure and the substrate is then subjected under a high vacuum to thermal treatment at a temperature above 100.degree. C. The carbon films produced in this manner comprise a fiber and/or tube structure which extends substantially perpendicular to the film.

Abstract: A process is disclosed for producing a structured mask for use in reproducing structures of that mask on an object with the aid of electromagnetic or particulate radiation, in particular for ion beam lithography. A flat smooth substrate of more than 20 .mu.m in thickness is selected and a thin diaphragm is produced from that substrate by etching one of the sections removed from the edging to a depth of c. 0.5-20 .mu.m, the tensile stress within the diaphragm being greater than 5 MPa. Lithographic structures are then formed on a central region of the diaphragm with a tensile stress of more than 5 MPa; apertures are etched into the diaphragm to form the mask structures and the effective thickness inside a diaphragm region substantially enclosing the mask structures is reduced, causing the central region containing the structures to be joined to the substrate edging elastically in such a way that the mean tensile stress within this central region is reduced to below 5 MPa.

Abstract: A silicon membrane for use as a micromechanical sensor or as a mask for projection lithography is fabricated by doping a silicon wafer to different thicknesses at different portions and then electrochemically etching away the undoped portion of the wafer.

Abstract: In an ion projection lithography system, apparatus and methods for positioning on a substrate or wafer at a target station an image of structures provided on a mask, wherein the mask includes reference marks to provide ion reference beams about the image field, the target station includes marks and the beam of the system is controlled to establish a coincidence of the marks on the mask with the corresponding marks at the target station. The ion projection system shown includes in this optical path an electrostatic multipole, means for rotational adjustment of the image relative to the substrate, and means for correcting the scale of the image. Embodiments are shown in which the marks at the target station are carried on the wafer or on a reference block which is positionally related to the wafer, e.g., by an interferometer.