Abstract: The present invention is related to a device (1) for measuring the quiescent current IDDQ drawn by an electronic device such as a CMOS device or an IC, from a supply voltage. The quiescent current is drawn in between switching peaks, and is a measure for the quality of a device under test. The measurement device of the invention comprises a current measuring unit (6), and parallel to this CMU (6), a current bypass unit CBU (20), comprising a power MOSFET. In the CBU of the invention, a connection (51) is present between a terminal other than the gate or base of one driver transistor and the source of the MOSFET, thereby minimising the charge transfer effects which are likely to occur during switching of the MOSFET. The invention is further related to a measurement device for IDDQ measurement comprising a current offset unit (21), which is aimed at improving the measurement range, without losing measurement resolution.

Abstract: The present invention is related to a method for testing a micro-electronic device, by applying a plurality of test vectors to said device, and measuring for each test vector, the quiescent supply current IDDQ, to said device, wherein each IDDQ measured value is divided by another IDDQ value, and wherein the result of said division is compared to a predefined reference, resulting in a pass or fail decision for said device.

Abstract: The present invention is related to a device (1) for measuring the quiescent current IDDQ drawn by an electronic device such as a CMOS device or an IC, from a supply voltage. The quiescent current is drawn in between switching peaks, and is a measure for the quality of a device under test. The measurement device of the invention comprises a current measuring unit (6), and parallel to this CMU (6), a current bypass unit CBU (20), comprising a power MOSFET. In the CBU of the invention, a connection (51) is present between a terminal other than the gate or base of one driver transistor and the source of the MOSFET, thereby minimising the charge transfer effects which are likely to occur during switching of the MOSFET. The invention is further related to a measurement device for IDDQ measurement comprising a current offset unit (21), which is aimed at improving the measurement range, without losing measurement resolution.

Abstract: The present invention is related to a device (1) for measuring the quiescent current IDDQ drawn by an electronic device such as a CMOS device or an IC, from a supply voltage. The quiescent current is drawn in between switching peaks, and is a measure for the quality of a device under test. The measurement device of the invention comprises a current measuring unit (6), and parallel to this CMU (6), a current bypass unit CBU (20), comprising a power MOSFET. In the CBU of the invention, a connection (51) is present between a terminal other than the gate or base of one driver transistor and the source of the MOSFET, thereby minimising the charge transfer effects which are likely to occur during switching of the MOSFET. The invention is further related to a measurement device for IDDQ measurement comprising a current offset unit (21), which is aimed at improving the measurement range, without losing measurement resolution.

Abstract: Test circuitry and test methods performing supply current measurement is presented. The test circuitry can be but is not limited to be on-chip. The supply current, also denoted test current, can be transient. The test circuitry and methods do not cause additional power supply voltage degradation. The test circuitry and methods provide detection capabilities for open defects, causing significant reduction of the transient supply current.

Abstract: The present invention is related to a device (1) for measuring the quiescent current IDDQ drawn by an electronic device such as a CMOS device or an IC, from a supply voltage. The quiescent current is drawn in between switching peaks, and is a measure for the quality of a device under test. The measurement device of the invention comprises a current measuring unit (6), and parallel to this CMU (6), a current bypass unit CBU (20), comprising a power MOSFET. In the CBU of the invention, a connection (51) is present between a terminal other than the gate or base of one driver transistor and the source of the MOSFET, thereby minimising the charge transfer effects which are likely to occur during switching of the MOSFET. The invention is further related to a measurement device for IDDQ measurement comprising a current offset unit (21), which is aimed at improving the measurement range, without losing measurement resolution.

Abstract: The present invention is related to a method for testing a micro-electronic device, by applying a plurality of test vectors to said device, and measuring for each test vector, the quiescent supply current IDDQ, to said device, wherein each IDDQ measured value is divided by another IDDQ value, and wherein the result of said division is compared to a predefined reference, resulting in a pass or fail decision for said device.

Abstract: Test circuitry and test methods performing supply current measurement is presented. The test circuitry can be but is not limited to be on-chip. The supply current, also denoted test current, can be transient. The test circuitry and methods do not cause additional power supply voltage degradation. The test circuitry and methods provide detection capabilities for open defects, causing significant reduction of the transient supply current.

Abstract: An apparatus and method for testing supply connections of an electronic device by using a current mirror configuration through using a particular connection of the branches of the current mirror to the supply line is provided. Such connection results in unbalanced operation of the current mirror but depending whether the supply connection under test is proper or not, the unbalance is essentially different, resulting in a high sensitivity of the test device.

Abstract: Test circuitry and test methods performing supply current measurement is presented. The test circuitry can be but is not limited to be on-chip. The supply current, also denoted test current, can be transient. The test circuitry and methods do not cause additional power supply voltage degradation. The test circuitry and methods provide detection capabilities for open defects, causing significant reduction of the transient supply current.

Abstract: A system for the measurement of a supply current of an electronic circuit is disclosed. The system includes: a first part for applying and controlling at least one voltage and one current on the circuit; a second part being fed by an input voltage and delivering a first output voltage and a first output current on a first terminal and a second output current on a second terminal, the first output voltage being essentially equal to the input voltage, said second output current being essentially proportional to the first output current being the supply current; a switch in between the first and the second part, being controlled by trigger means controlled by the first part, for turning the switch off or on whereby switching the second part in measurement mode or in bypass mode.

Abstract: The present invention relates to a system for the measurement of a supply current of an electronic circuit, comprising:a first part with control means for applying and controlling at least one voltage and one current on said circuit;a second part being fed by an input voltage and delivering a first output voltage and a first output current on a first terminal and a second output current on a second terminal, said first output voltage being essentially equal to said input voltage, said second output current being essentially proportional to said first output current being said supply current;a switch in between said first and said second part, being controlled by trigger means controlled by said first part, for turning said switch off or on whereby switching said second part in measurement mode or in bypass mode.