Abstract: A method for manufacturing a semiconductor device includes providing a semiconductor substrate including a first surface and a second surface which is arranged opposite to the first surface. The semiconductor substrate includes a plurality of trench structures extending from the first surface into the semiconductor substrate. The thickness of the semiconductor substrate is then reduced by removing semiconductor material at the second surface to obtain a processed second surface with exposed bottom portions of the trench structures. At least a first mask is formed on the processed second surface in a self-aligned manner with respect to the bottom portions of the trench structures, and doping regions are formed in the semiconductor substrate between the trench structures.

Abstract: A method for manufacturing a semiconductor device includes providing a semiconductor substrate including a first surface and a second surface which is arranged opposite to the first surface. The semiconductor substrate includes a plurality of trench structures extending from the first surface into the semiconductor substrate. The thickness of the semiconductor substrate is then reduced by removing semiconductor material at the second surface to obtain a processed second surface with exposed bottom portions of the trench structures. At least a first mask is formed on the processed second surface in a self-aligned manner with respect to the bottom portions of the trench structures, and doping regions are formed in the semiconductor substrate between the trench structures.

Abstract: A semiconductor component has a semiconductor body comprising a blocking pn junction, a source zone of a first conductivity type connected to a first electrode and bordering on a zone forming the blocking pn junction of a second conductivity type complementary to the first conductivity type, and a drain zone of the first conductivity type connected to a second electrode. The side of the zone of the second conductivity type facing the drain zone forms a first surface, and in the region between the first surface and a second surface located between the first surface and the drain zone, comprises areas of the first and second conductivity type nested in one another. The second surface is positioned at a distance from the drain zone such that the areas of the first and second conductivity type nested in each other do not reach the drain zone.

Abstract: A semiconductor component has a semiconductor body comprising blocking pn junction, a source zone of a first conductivity type connected to a first electrode and bordering on a zone forming the blocking pn junction of a second conductivity type complementary to the first conductivity type, and a drain zone of the first conductivity type connected to a second electrode. The side of the zone of the second conductivity type facing the drain zone forms a first surface, and in the region between the first surface and a second surface located between the first surface and the drain zone, comprises areas of the first and second conductivity type nested in one another. The second surface coincides with the surface of the drain zone facing the source zone, such that the regions of the first and second conductivity type nested inside each other reach the drain zone.

Abstract: A semiconductor component having a semiconductor body comprises a blocking pn junction, a source zone of a first conductivity type and bordering on a zone forming the blocking pn junction of a second conductivity type complementary to the first conductivity type, and a drain zone of the first conductivity type. The side of the zone of the second conductivity type faces the drain zone forming a first surface, and in the region between the first surface and a second surface areas of the first and second conductivity type are nested in one another. The areas of the first and second conductivity type are variably so doped that near the first surface doping atoms of the second conductivity type predominate, and near the second surface doping atoms of the first conductivity type predominate. Furthermore a plurality of floating zones of the first and second conductivity type is provided.

Abstract: A process for manufacturing of a semiconductor device comprising a blocking pn junction, a source zone of a first conductivity type connected to a first electrode and bordering on a zone forming the blocking pn junction of a second conductivity type complementary to the first conductivity type, and a drain zone of the first conductivity type connected to a second electrode, the side of the zone of the second conductivity type facing the drain zone forming a first surface, and in the region between the first surface and a second surface located between the first surface and the drain zone, areas of the first and second conductivity type nested in one another, comprises the step of: varying in individual semiconductor layers, by doping, the degree of compensation in the regions of the second conductivity type.

Abstract: A switching power supply including a power factor correction circuit comprises a rectifier, an inductor coupled in series with the rectifier, a semiconductor switch formed by a compensation device coupled in parallel with the rectifier and the inductor. The output circuit comprises a diode coupled in series with a capacitor both coupled in parallel with the semiconductor switch. An input current sensor, and a control unit for controlling the compensation device are provided.

Abstract: The present invention relates to a continuous adiabatic process for preparing nitrochlorobenzene in the presence of phosphoric acid. The waste acid produced during the practice of the process is reconcentrated and recycled into the nitration reaction.

Abstract: The present invention relates to a continuous isothermal process for preparing mononitrotoluenes in the presence of a mixed acid component comprising mixtures of sulfuric acid and phosphoric acid with concentration of the resultant waste acid and recycling of the concentrated waste acid to the process.

Abstract: A switching power supply including a power factor correction circuit comprises a rectifier, an inductor coupled in series with the rectifier, a semiconductor switch formed by a compensation device coupled in parallel with the rectifier and the inductor. The output circuit comprises a diode coupled in series with a capacitor both coupled in parallel with the semiconductor switch. An input current sensor, and a control unit for controlling the compensation device are provided.

Abstract: A semiconductor component has a semiconductor body comprising a blocking pn junction, a source zone of a first conductivity type connected to a first electrode and bordering on a zone forming the blocking pn junction of a second conductivity type complementary to the first conductivity type, and a drain zone of the first conductivity type connected to a second electrode. The side of the zone of the second conductivity type facing the drain zone forms a first surface, and in the region between the first surface and a second surface located between the first surface and the drain zone, comprises areas of the first and second conductivity type nested in one another. The second surface is positioned at a distance from the drain zone such that the areas of the first and second conductivity type nested in each other do not reach the drain zone.

Abstract: A semiconductor component has a semiconductor body comprising blocking pn junction, a source zone of a first conductivity type connected to a first electrode and bordering on a zone forming the blocking pn junction of a second conductivity type complementary to the first conductivity type, and a drain zone of the first conductivity type connected to a second electrode. The side of the zone of the second conductivity type facing the drain zone forms a first surface, and in the region between the first surface and a second surface located between the first surface and the drain zone, comprises areas of the first and second conductivity type nested in one another. The second surface coincides with the surface of the drain zone facing the source zone, such that the regions of the first and second conductivity type nested inside each other reach the drain zone.

Abstract: A semiconductor component having a semiconductor body comprises a blocking pn junction, a source zone of a first conductivity type and bordering on a zone forming the blocking pn junction of a second conductivity type complementary to the first conductivity type, and a drain zone of the first conductivity type. The side of the zone of the second conductivity type faces the drain zone forming a first surface, and in the region between the first surface and a second surface areas of the first and second conductivity type are nested in one another. The areas of the first and second conductivity type are variably so doped that near the first surface doping atoms of the second conductivity type predominate, and near the second surface doping atoms of the first conductivity type predominate. Furthermore a plurality of floating zones of the first and second conductivity type is provided.

Abstract: A process for manufacturing of a semiconductor device comprising a blocking pn junction, a source zone of a first conductivity type connected to a first electrode and bordering on a zone forming the blocking pn junction of a second conductivity type complementary to the first conductivity type, and a drain zone of the first conductivity type connected to a second electrode, the side of the zone of the second conductivity type facing the drain zone forming a first surface, and in the region between the first surface and a second surface located between the first surface and the drain zone, areas of the first and second conductivity type nested in one another, comprises the step of:

Abstract: The present invention relates to a continuous adiabatic process for preparing nitrochlorobenzene in the presence of phosphoric acid. The waste acid produced during the practice of the process is reconcentrated and recycled into the nitration reaction.

Abstract: The present invention relates to a continuous adiabatic process for preparing nitrochlorobenzene, in which the waste sulfuric acid produced during the practice of the process is reconcentrated and recycled into the nitration reaction.

Abstract: The present invention relates to a process for the continuous isothermal preparation of mononitrotoluenes with concentration of the resultant waste sulfuric acid and recycling of the concentrated waste sulfuric acid to the process.

Abstract: The present invention relates to a continuous adiabatic process for preparing nitrochlorobenzene, in which the waste sulfuric acid produced during the practice of the process is reconcentrated and recycled into the nitration reaction.

Abstract: The present invention relates to a continuous isothermal process for preparing mononitrotoluenes in the presence of a mixed acid component comprising mixtures of sulfuric acid and phosphoric acid with concentration of the resultant waste acid and recycling of the concentrated waste acid to the process.

Abstract: The present invention relates to a process for the continuous isothermal preparation of mononitrotoluenes with concentration of the resultant waste sulfuric acid and recycling of the concentrated waste sulfuric acid to the process.