Patents by Inventor Hans Meixner

Hans Meixner has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7992426
    Abstract: A FET gas sensor having a relatively low operating temperature, for example, room temperature, is free from cross sensitivities from interfering gases by a preceding in-line filter. The sensor's service life is substantially stabilizable by using fabric-like activated charcoal filters which can be regenerated by a moderate temperature increase, and by limiting the diffusion of the analyte gas, which is made possible by the relatively small amount of gas detectable on the sensitive layer of the sensor. This substantially increases the service life of the filters. The gas sensor eliminates cross sensitivities to thereby increase the detection reliability thereof. Also, the gas sensor has relative long term stability and is economical to build. The gas sensor can read relatively weak signals generated by gas-sensitive layers, for example, without other stronger gas signals interfering with the weak signals.
    Type: Grant
    Filed: April 21, 2005
    Date of Patent: August 9, 2011
    Assignee: Micronas GmbH
    Inventors: Maximilian Fleischer, Uwe Lampe, Hans Meixner, Roland Pohle, Ralf Schneider, Elfriede Simon
  • Patent number: 7946153
    Abstract: A gas sensor based on a field effect transistor (“FET”) evaluates both a change in work function of a gas-sensitive layer of the FET and a change in the capacitance of the layer. Thus, two physically independent signals are read from the gas-sensitive layer, each signal representing a sensitivity to a different gas. This reduces the effect of cross-sensitivities; that is, of one gas on the target gas. The underlying physical mechanisms, the first causing a change in the work function in a reaction with gases and the second causing a change in the capacitance of the sensitive layer, are widely different. Because of this, the two parameters demonstrate different gas sensitivities. If the reactions to both gases are known, the effect of the interfering gas on the sensor signal can be compensated for, and with this the concentration of the target gas can be determined.
    Type: Grant
    Filed: April 22, 2005
    Date of Patent: May 24, 2011
    Assignee: Micronas GmbH
    Inventors: Maximilian Fleischer, Uwe Lampe, Hans Meixner, Roland Pohle, Elfriede Simon
  • Patent number: 7886993
    Abstract: An injection valve for injecting fuel comprises a valve housing (1) inside of which a drive unit (15) controls the movement of a valve needle (5) that is pretensioned by a spring (11). The injection valve also comprises a main chamber (27), which is provided inside the valve housing, is filled with fuel and accommodates the valve needle (5), and comprises a hydraulic bearing for the drive unit (15). The hydraulic bearing has a hydraulic chamber (29) that is connected to the main chamber (27), whereby fuel serves as the operating substance of the hydraulic bearing.
    Type: Grant
    Filed: August 23, 2004
    Date of Patent: February 15, 2011
    Assignee: Siemens Aktiengesellschaft
    Inventors: Georg Bachmaier, Bernhard Fischer, Bernhard Gottlieb, Andreas Kappel, Hans Meixner, Enrico Ulivieri
  • Patent number: 7851202
    Abstract: A biosensor for detecting an antigen using an antigen/antibody coupling includes: a silicon substrate, at least one interdigital electrode pair structure that is located on the silicon substrate, the electrode pair being interspaced at a maximum distance of 1.0 ?m; a counter-electrode on the silicon substrate; a reference electrode; a first layer of protein, covering at least the interdigital electrode structure; a selective second protein layer applied to the first layer and containing a capture antibody selected specifically with respect to the antigen of interest and to which the antigen can be coupled. A sensor signal can be read on the interdigital electrode structure, if the antigen is coupled to the capture antibody by way of a sample to be analyzed that comes into contact with the biosensor and a redox reactive molecule is enzymatically released on the sensor surface by an enzyme-marked detection antibody likewise coupled to the antigen.
    Type: Grant
    Filed: January 27, 2005
    Date of Patent: December 14, 2010
    Assignee: Siemens Aktiengesellschaft
    Inventors: Maximilian Fleischer, Corinna Haindl, Hans Meixner, Elfriede Simon
  • Patent number: 7772617
    Abstract: A gas sensitive field effect transistor comprises a semiconductor substrate that includes a capacitance well, and source and drain regions of a field effect transistor. A gate of the field effect transistor is separated from the semiconductor substrate by an insulator, and a gas sensitive layer separated from the gate by an air gap. The field effect transistor provides an output signal indicative of the presence of a target gas within the air gap to an amplifier, which provides an amplified output signal that is electrically coupled to the capacitance well.
    Type: Grant
    Filed: March 30, 2006
    Date of Patent: August 10, 2010
    Assignee: Micronas GmbH
    Inventors: Maximilian Fleischer, Hans Meixner, Uwe Lampe, Roland Pohle, Ralf Schneider, Elfriede Simon
  • Patent number: 7707869
    Abstract: An operating method is disclosed for the selective detection of a target gas in a gas mixture to be measured by a field effect transistor with a gas-sensitive layer disposed on a carrier substrate, wherein the gas mixture to be measured is prepared by an electrochemical element such that the measured gas mixture includes minimal amounts of interfering gases that interfere with the measurement of the target gas, and/or at least one target gas is activated such that it is detected by the gas-sensitive layer.
    Type: Grant
    Filed: April 21, 2005
    Date of Patent: May 4, 2010
    Assignee: Micronas GmbH
    Inventors: Maximilian Fleischer, Hans Meixner, Elfriede Simon, Uwe Lampe, Roland Pohle
  • Patent number: 7704214
    Abstract: A volumetric flow of an analyte, including exhaled air, is fed to a gas sensor unit by used of gas flow device, which can include various sensors for the determination of nitrogen oxides. An oxidation catalyst is used when using an NO2 sensor, which converts nitrogen monoxide to nitrogen dioxide and the gas sensor unit measures the content of nitrogen dioxide. The nitrogen monoxide content is calculated from the nitrogen dioxide content. In order to eliminate cross-sensitivity moisture and ethanol are also measured. The device can be applied to the determination of nitrogen monoxide content of exhaled air.
    Type: Grant
    Filed: April 30, 2002
    Date of Patent: April 27, 2010
    Assignee: Siemens Aktiengesellschaft
    Inventors: Klaus Abraham-Fuchs, Maximilian Fleischer, Hans Meixner, Eva Rumpel, Elfriede Simon
  • Patent number: 7669783
    Abstract: The invention relates to an injection valve which has a piezo actuator that is functionally connected to a nozzle needle by a hydraulic transmission device. The hydraulic transmission device is connected to a pressure reservoir by a sealing gap so that the pressure differences between the pressure reservoir and a hydraulic chamber of the hydraulic transmission device are compensated in the long term.
    Type: Grant
    Filed: February 11, 2003
    Date of Patent: March 2, 2010
    Assignee: Siemens Aktiengesellschaft
    Inventors: Bernhard Fischer, Bernhard Gottlieb, Andreas Kappel, Hans Meixner, Randolf Mock
  • Publication number: 20090211437
    Abstract: A FET gas sensor having a relatively low operating temperature, for example, room temperature, is free from cross sensitivities from interfering gases by a preceding in-line filter. The sensor's service life is substantially stabilizable by using fabric-like activated charcoal filters which can be regenerated by a moderate temperature increase, and by limiting the diffusion of the analyte gas, which is made possible by the relatively small amount of gas detectable on the sensitive layer of the sensor. This substantially increases the service life of the filters. The gas sensor eliminates cross sensitivities to thereby increase the detection reliability thereof. Also, the gas sensor has relative long term stability and is economical to build. The gas sensor can read relatively weak signals generated by gas-sensitive layers, for example, without other stronger gas signals interfering with the weak signals.
    Type: Application
    Filed: April 21, 2005
    Publication date: August 27, 2009
    Inventors: Maximilian Fleischer, Uwe Lampe, Hans Meixner, Roland Pohle, Ralf Schneider, Elfriede Simon
  • Patent number: 7553458
    Abstract: An alcohol sensor having gas-sensitive layers made of polymers or inorganic oxides wherein a signal is read out by means of work function change which is produced in the form of a field-effect transistor.
    Type: Grant
    Filed: March 4, 2002
    Date of Patent: June 30, 2009
    Assignee: Micronas GmbH
    Inventors: Maximillian Fleischer, Hans Meixner, Tim Schwebel, Elfriede Simon
  • Publication number: 20090127100
    Abstract: An FET-based gas sensor includes at least one field-effect transistor and at least one gas-sensitive layer and a reference layer. Any changes in work function occurring when materials of the layers are exposed to a gas are used to trigger the field-effect structures. The gas-sensitive layer includes a metal oxide having an oxidation catalyst on its surface and accessible to the measured gas.
    Type: Application
    Filed: December 9, 2008
    Publication date: May 21, 2009
    Inventors: Maximilian Fleischer, Gabor Kiss, Hans Meixner, Uwe Lampe
  • Patent number: 7459732
    Abstract: A gas-sensitive field-effect transistor may be formed from a substrate with a gas-sensitive layer and a transistor processed separately and then assembled. The substrate may be patterned to form spacers by which the height of an air gap between the transistor and the sensitive layer may be adjustable to a relatively precise degree. Formation of the spacers can be achieved by patterning the substrate using material-removal techniques. The height of the spacers may be adjusted in the layer thickness of the gas-sensitive layer and for the transistor fabricated using a CMOS process. Suitable techniques for producing recesses between the spacers include, for example, polishing, cutting, sandblasting, lithographic dry etching, or wet-chemical etching. Suitable materials for the substrate may include, for example, glass, ceramic, aluminum oxide, silicon, or a dimensionally stable polymer.
    Type: Grant
    Filed: March 31, 2006
    Date of Patent: December 2, 2008
    Assignee: Micronas GmbH
    Inventors: Maximilian Fleischer, Uwe Lampe, Hans Meixner, Roland Pohle, Ralf Schneider, Elfriede Simon
  • Patent number: 7456969
    Abstract: The invention relates to a device for monitoring the oxygen concentration in an aircraft tank. The device includes an absorption measuring section equipped with a laser or laser diode (6), a photodiode (7), a temperature sensor (8) and a reflector (5) for carrying out laser spectroscopy on a gas volume to be measured inside the tank. The conducting components of the device are positioned outside the tank and its reflector (5) is positioned in the tank in the gas volume to be measured, the components and reflector being optically coupled by a window (3) that is situated in the tank wall (2). The absorption measuring section is mainly located in the chamber containing the gas to be measured.
    Type: Grant
    Filed: June 8, 2004
    Date of Patent: November 25, 2008
    Assignee: Siemens Schweiz AG
    Inventors: Gilles Chabanis, Maximilian Fleischer, Philippe Mangon, Hans Meixner, Rainer Strzoda
  • Publication number: 20080274559
    Abstract: The invention relates to a gas sensor which is used to detect ammonia by detecting and evaluating conductivity variations on semi-conductive metal oxides, comprising: a substrate, a gas sensitive layer made of a semi-conductive metal oxide, a catalytic filter which is disposed in front of the metal oxide, said filter being used to convert ammonia, contained in the measuring gas, into a NO/NO2 mixture or to only NO2, measuring electrodes which are arranged on the surface of the substrate in order to detect conductivity variations in the semi-conductive metal oxide which is at least sensitive to NO/NO2, a controllable electric heating device which is used to adjust predetermined temperatures at least for the semi-conductive metal oxide, whereby the formed NO/NO2 can be guided to the metal oxide and the content of ammonia in the measuring gas can be determined from the NO/NO2-measurement by means of the semi-conductive metal oxide.
    Type: Application
    Filed: June 13, 2005
    Publication date: November 6, 2008
    Inventors: Maximilian Fleischer, Hans Meixner, Roland Pohle, Kerstin Wiesner
  • Publication number: 20080038749
    Abstract: A biosensor for detecting an antigen using an antigen/antibody coupling includes: a silicon substrate, at least one interdigital electrode pair structure that is located on the silicon substrate, the electrode pair being interspaced at a maximum distance of 1.0 ?m; a counter-electrode on the silicon substrate; a reference electrode; a first layer of protein, covering at least the interdigital electrode structure; a selective second protein layer applied to the first layer and containing a capture antibody selected specifically with respect to the antigen of interest and to which the antigen can be coupled. A sensor signal can be read on the interdigital electrode structure, if the antigen is coupled to the capture antibody by way of a sample to be analysed that comes into contact with the biosensor and a redox reactive molecule is enzymatically released on the sensor surface by an enzyme-marked detection antibody likewise coupled to the antigen.
    Type: Application
    Filed: January 27, 2005
    Publication date: February 14, 2008
    Inventors: Maximilian Fleischer, Corinna Haindl, Hans Meixner, Elfriede Simon
  • Publication number: 20080016949
    Abstract: A gas sensor based on a field effect transistor (“FET”) evaluates both a change in work function of a gas-sensitive layer of the FET and a change in the capacitance of the layer. Thus, two physically independent signals are read from the gas-sensitive layer, each signal representing a sensitivity to a different gas. This reduces the effect of cross-sensitivities; that is, of one gas on the target gas. The underlying physical mechanisms, the first causing a change in the work function in a reaction with gases and the second causing a change in the capacitance of the sensitive layer, are widely different. Because of this, the two parameters demonstrate different gas sensitivities. If the reactions to both gases are known, the effect of the interfering gas on the sensor signal can be compensated for, and with this the concentration of the target gas can be determined.
    Type: Application
    Filed: April 22, 2005
    Publication date: January 24, 2008
    Inventors: Maximillian Fleischer, Uwe Lampe, Hans Meixner, Roland Pohle, Elfriede Simon
  • Publication number: 20070235773
    Abstract: A gas-sensitive field-effect transistor (GasFET) for the detection or measurement of an amount of hydrogen sulfide present in ambient air includes a raised gate electrode and a transistor structure. The raised gate electrode may be formed from or coated with a gas-sensitive material such as tin oxide, or silver, silver oxide or mixtures thereof. An insulator layer may be disposed on top of the transistor structure. An air gap is formed between the gas-sensitive layer of the raised gate electrode and the insulator layer on top of the transistor structure.
    Type: Application
    Filed: March 31, 2006
    Publication date: October 11, 2007
    Inventors: Ignaz Eisele, Maximilian Fleischer, Gunter Freitag, Thorsten Knittel, Uwe Lampe, Hans Meixner, Roland Pohle, Elfriede Simon
  • Publication number: 20070220954
    Abstract: The invention relates to an FET-based gas sensor comprising a gas channel for diffusing a measuring gas to a gas-sensitive layer which is actively connected to a FET for signal readout. According to the invention, an electrochemical element is at least partially inserted into the gas channel for the electrochemical conversion of interfering gases. The arrangement is permeable to the target gas.
    Type: Application
    Filed: April 21, 2005
    Publication date: September 27, 2007
    Applicant: MICRONAS GMBH
    Inventors: Maximilian Fleischer, Hans Meixner, Elfriede Simon, Uwe Lampe, Roland Pohle
  • Publication number: 20070181426
    Abstract: An FET-based gas sensor includes at least one field-effect transistor and at least one gas-sensitive layer and a reference layer. Any changes in work function occurring when materials of the layers are exposed to a gas are used to trigger the field-effect structures. The gas-sensitive layer includes a metal oxide having an oxidation catalyst on its surface and accessible to the measured gas.
    Type: Application
    Filed: April 21, 2005
    Publication date: August 9, 2007
    Inventors: Maximilian Fleischer, Gabor Kiss, Hans Meixner, Uwe Lampe
  • Publication number: 20060278528
    Abstract: Method of effecting a readout of a gas-sensitive field-effect transistor having an air gap between a gate electrode with a gas-sensitive layer and the readout transistor, in which a potential occurring on the gas-sensitive layer in the presence of a target gas is passed through a noncontacting floating gate electrode to the transistor, wherein the potential of a reference electrode, which together with the floating gate electrode generates a capacitance Cw, is tracked to the potential of the floating gate electrode in order to eliminate the capacitance Cw during the measurement.
    Type: Application
    Filed: March 30, 2006
    Publication date: December 14, 2006
    Inventors: Maximilian Fleischer, Hans Meixner, Uwe Lampe, Roland Pohle, Ralf Schneider, Elfriede Simon