Abstract: A method for the simulation of a photolithographic process for generating a wafer structure includes providing an aerial image of a region of a mask that includes the mask structure, prescribing a range of intensities, determining auxiliary or potential wafer structures for different threshold values within the range of intensities, determining the number of structure elements for each of the auxiliary or potential wafer structures, determining a stability range consisting of successive threshold values from the threshold values that were used for the determination of auxiliary or potential wafer structures, within the stability range the number of structure elements of the auxiliary or potential wafer structures remaining constant or lying within a prescribed range, and determining the wafer structure on the basis of the aerial image and a threshold value within the stability range. A microscope for carrying out the method is also provided.

Abstract: The invention relates to a method for detecting the position of a mask holder for photolithographic masks, said method including the following steps: positioning the mask holder with the mask on a measuring table of a measurement apparatus, measuring the mask holder by use of an algorithm, storing the absolute position of the mask holder on the measuring table, and recording and storing at least one reference image.

Abstract: The invention relates to a method for detecting the position of a mask holder for photolithographic masks, said method including the following steps: positioning the mask holder with the mask on a measuring table of a measurement apparatus, measuring the mask holder by use of an algorithm, storing the absolute position of the mask holder on the measuring table, and recording and storing at least one reference image.

Abstract: A method for the simulation of a photolithographic process for generating a wafer structure includes providing an aerial image of a region of a mask that includes the mask structure, prescribing a range of intensities, determining auxiliary or potential wafer structures for different threshold values within the range of intensities, determining the number of structure elements for each of the auxiliary or potential wafer structures, determining a stability range consisting of successive threshold values from the threshold values that were used for the determination of auxiliary or potential wafer structures, within the stability range the number of structure elements of the auxiliary or potential wafer structures remaining constant or lying within a prescribed range, and determining the wafer structure on the basis of the aerial image and a threshold value within the stability range. A microscope for carrying out the method is also provided.