Abstract: A microlithographic projection exposure mirror has a mirror substrate (12, 32), a reflection layer system (21, 41) for reflecting electromagnetic radiation that is incident on the mirror's optical effective surface, and at least one piezoelectric layer (16, 36), which is arranged between the mirror substrate and the reflection layer system and to which an electric field for producing a locally variable deformation is applied by a first electrode arrangement situated on the side of the piezoelectric layer facing the reflection layer system, and by a second electrode arrangement situated on the side of the piezoelectric layer facing the mirror substrate. One of the electrode arrangements is assigned a mediator layer (17, 37, 51, 52, 53, 71) for setting an at least regionally continuous profile of the electrical potential along the respective electrode arrangement. The mediator layer has at least two mutually electrically insulated regions (17a, 17b, 17c, . . . ; 37a, 37b, 37c, . . . ).

Abstract: Semiconductor structures can be investigated, e.g., in an in-line quality check. An x-ray scattering measurement, e.g., CD-SAXS, can be used for wafer metrology. The x-ray scattering measurement can be configured based on a slice-and-imaging tomographic measurement using a dual-beam device, e.g., including a focused ion beam device and a scanning electron microscope.

Abstract: A method for measuring a surface shape of an optical element, wherein the optical element has a main body with a substrate and a reflective surface, and wherein at least one cooling channel for receiving a coolant is formed in the substrate, comprising: a) recording a cooling channel pressure, b) recording a measurement environment pressure, c) determining a pressure difference based on the cooling channel pressure and the measurement environment pressure, d) comparing the pressure difference with a predetermined target pressure difference, e) monitoring for a deviation between the pressure difference and the target pressure difference, wherein, if a deviation greater than a predetermined limit value is detected, the cooling channel pressure is adapted in such a way that the deviation becomes less than or equal to the predetermined limit value, and f) measuring the surface shape if the deviation is less than or equal to the predetermined limit value.

Abstract: Disclosed are an optical system, in particular for microlithography, and a method for operating an optical system. According to one disclosed aspect, the optical system includes at least one mirror (100, 500, 600) having an optical effective surface (101, 501, 601) and a mirror substrate (110, 510, 610), wherein at least one cooling channel (115, 515, 615) in which a cooling fluid is configured to flow is arranged in the mirror substrate, for dissipating heat that is generated in the mirror substrate due to absorption of electromagnetic radiation incident from a light source on the optical effective surface, and a unit (135, 535, 635) to adjust the temperature and/or the flow rate of the cooling fluid either dependent on a measured quantity that characterizes the thermal load in the mirror substrate or dependent on an estimated/expected thermal load in the mirror substrate for a given power of the light source.

Abstract: A projection exposure apparatus comprises a projection objective, and the projection objective comprises an optical device, wherein the optical device comprises an optical element having an optically effective surface and an electrostrictive actuator. The electrostrictive actuator is deformable by a control voltage being applied. The electrostrictive actuator is functionally connected to the optical element to influence the surface shape of the optically effective surface. A control device supplies the electrostrictive actuator with the control voltage. A measuring device is configured, at least at times while the electrostrictive actuator influences the optically effective surface of the optical element, to measure directly and/or to determine indirectly the temperature and/or a temperature change of the electrostrictive actuator and/or the surroundings thereof to take account of a temperature-dependent influence during driving of the electrostrictive actuator by the control device.

Abstract: A mirror, e.g. for a microlithographic projection exposure apparatus, includes an optical effective surface, a mirror substrate, a reflection layer stack for reflecting electromagnetic radiation incident on the optical effective surface, at least one first electrode arrangement, at least one second electrode arrangement, and an actuator layer system situated between the first and the second electrode arrangements. The actuator layer system is arranged between the mirror substrate and the reflection layer stack, has a piezoelectric layer, and reacts to an electrical voltage applied between the first and the second electrode arrangements with a deformation response in a direction perpendicular to the optical effective surface. The deformation response varies locally by at least 20% in PV value for a predefined electrical voltage that is spatially constant across the piezoelectric layer.

Abstract: An optical system includes at least one optical element which has an optically effective surface and which is designed for an operating wavelength of less than 30 nm. The optical system also includes a heating arrangement for heating this optical element and comprising a plurality of IR emitters for irradiating the optically effective surface with IR radiation. The IR emitters are activatable and deactivatable independently of each other to variably set different heating profiles in the optical element. The optical system further includes at least one beam shaping unit for shaping the beam of the IR radiation steered onto the optically effective surface by the IR emitters. The optical system also includes a multi-fiber head comprising a multi-fiber connector for connecting optical fibers. IR radiation from a respective one of the IR emitters is suppliable by way of each of these optical fibers.

Abstract: A diffractive optical element (10) for a test interferometer (100) measures a shape of an optical surface (102). Diffractive shape measuring structures (16) are arranged on a used surface (14) of the element and generate a test wave (122) irradiating the surface when the element is arranged in the interferometer. At least one test field (18) several profile properties of test structures contained in the test field. The profile properties characterize a profile line of the test structures extending transversely with respect to the used surface and include a flank angle of the profile line, a profile depth and a depth of a microtrench in a bottom region of a trench-shaped profile of the test structures. The test field is arranged at one location of the used surface instead of the diffractive shape measuring structures such that the test field is surrounded by several diffractive shape measuring structures.

Abstract: A microlithographic projection exposure mirror has a mirror substrate (12, 32), a reflection layer system (21, 41) for reflecting electromagnetic radiation that is incident on the mirror's optical effective surface, and at least one piezoelectric layer (16, 36), which is arranged between the mirror substrate and the reflection layer system and to which an electric field for producing a locally variable deformation is applied by a first electrode arrangement situated on the side of the piezoelectric layer facing the reflection layer system, and by a second electrode arrangement situated on the side of the piezoelectric layer facing the mirror substrate. One of the electrode arrangements is assigned a mediator layer (17, 37, 51, 52, 53, 71) for setting an at least regionally continuous profile of the electrical potential along the respective electrode arrangement. The mediator layer has at least two mutually electrically insulated regions (17a, 17b, 17c, . . . ; 37a, 37b, 37c, . . . ).

Abstract: Measurement method for interferometrically determining a shape of a test object (14) surface (12) includes arranging a first diffractive optical element (30, 130, 230) in an input wave (18) beam path, to generate a first test wave (34) with a wavefront that is adapted to a desired shape of the optical surface, detecting a first interferogram generated by the first test wave after interaction with the test object surface, arranging a different diffractive optical element (32, 232) in the input wave beam path for generating a further test wave with a wavefront which is adapted to the desired shape of the optical surface, the first and the further diffractive optical elements differing in their respective diffraction structure configurations, capturing a further interferogram generated by the further test wave after interaction with the test object surface, and determining the surface shape of the test object by calculating the two interferograms.

Abstract: A metrology target having a periodic or quasi-periodic structure, which is characterized by a plurality of parameters. At least one of these parameters varies locally monotonically, wherein the maximum size of this variation over a distance of 5 ?m is less than 10% of the size of the at least one parameter. In addition, the metrology target has at least one used structure and at least one auxiliary structure, wherein the auxiliary structure transitions progressively into the used structure with regard to the locally monotonically varying parameter. Also disclosed are an associated method and associated device for characterizing structured elements configured as wafers, masks or CGHs.

Abstract: In an aspect, a plurality of parameters characteristic of the patterned wafer are determined based on measurements of the intensity of electromagnetic radiation after the diffraction thereof at the patterned wafer. The intensity measurements are carried out for at least one used structure and at least one auxiliary structure. The parameters are determined based on intensity values measured during the intensity measurements for respectively different combinations of wavelength, polarization and/or order of diffraction, and also on the basis of correspondingly calculated intensity values, with a mathematical optimization method being applied.

Abstract: A measurement arrangement and a method for measuring a wavefront aberration of an imaging optical system (10) of a microlithographic projection exposure apparatus. The method includes separate measurement of respective wavefront aberrations of different partial arrangements (M1; M2; M3; M1, M3) of the optical elements.

Abstract: A test appliance and a method for testing a mirror, e.g., a mirror of a microlithographic projection exposure apparatus. The test appliance has a computer-generated hologram (CGH), and a test can be carried out on at least a portion of the mirror by way of an interferometric superposition of a test wave that is directed onto the mirror by this computer-generated hologram and a reference wave. Here, the computer-generated hologram (CGH) (120, 320) is designed in such a way that, during operation of the appliance, it provides a first test wave for testing a first portion of the mirror (101, 301) by interferometric superposition with a reference wave in a first position of the mirror (101, 301) and at least a second test wave for testing a second portion of the mirror (101, 301) by interferometric superposition with a reference wave in a second position of the mirror (101, 301).

Abstract: A measurement arrangement (10) and an associated method for interferometrically determining the surface shape (12) of a test object (14) includes a light source (16) providing an input wave (18) and a diffractive optical element (24). The diffractive optical element is configured to produce in each case by way of diffraction from the input wave a test wave (26), which is directed at the test object (14) and has a wavefront that is adapted at least partially to a desired shape of the optical surface, and a reference wave (28). The measurement arrangement furthermore includes a reflective optical element (30) that back-reflects the reference wave (28) and a capture device (36) that captures an interferogram produced by superposing the test wave after interaction with the test object and the back-reflected reference wave (28), in each case after a further diffraction at the diffractive optical element in a capture plane (48).

Abstract: A method includes determining at least one characteristic variable which is characteristic of a patterned wafer based on a plurality of measurements of the intensity of electromagnetic radiation after the diffraction thereof at the patterned wafer. The intensity measurements are carried out for at least two different orders of diffraction. For at least two regions on the wafer, in each case a value of the characteristic variable that is assigned to the respective region is determined on the basis of a comparison of the measurement values obtained in the intensity measurements for the at least two orders of diffraction. The intensity measurements for determining the characteristic variable for the at least two regions on the wafer are carried out simultaneously.

Abstract: In an aspect, a plurality of parameters characteristic of the patterned wafer are determined based on measurements of the intensity of electromagnetic radiation after the diffraction thereof at the patterned wafer. The intensity measurements are carried out for at least one used structure and at least one auxiliary structure. The parameters are determined based on intensity values measured during the intensity measurements for respectively different combinations of wavelength, polarization and/or order of diffraction, and also on the basis of correspondingly calculated intensity values, with a mathematical optimization method being applied.

Abstract: A measurement arrangement (10) and an associated method for interferometrically determining the surface shape (12) of a test object (14) includes a light source (16) providing an input wave (18) and a diffractive optical element (24). The diffractive optical element is configured to produce in each case by way of diffraction from the input wave a test wave (26), which is directed at the test object (14) and has a wavefront that is adapted at least partially to a desired shape of the optical surface, and a reference wave (28). The measurement arrangement furthermore includes a reflective optical element (30) that back-reflects the reference wave (28) and a capture device (36) that captures an interferogram produced by superposing the test wave after interaction with the test object and the back-reflected reference wave (28), in each case after a further diffraction at the diffractive optical element in a capture plane (48).

Abstract: A measurement arrangement and a method for measuring a wavefront aberration of an imaging optical system (10) of a microlithographic projection exposure apparatus. The method includes separate measurement of respective wavefront aberrations of different partial arrangements (M1; M2; M3; M1, M3) of the optical elements.

Abstract: A test appliance and a method for testing a mirror, e.g., a mirror of a microlithographic projection exposure apparatus. The test appliance has a computer-generated hologram (CGH), and a test can be carried out on at least a portion of the mirror by way of an interferometric superposition of a test wave that is directed onto the mirror by this computer-generated hologram and a reference wave. Here, the computer-generated hologram (CGH) (120, 320) is designed in such a way that, during operation of the appliance, it provides a first test wave for testing a first portion of the mirror (101, 301) by interferometric superposition with a reference wave in a first position of the mirror (101, 301) and at least a second test wave for testing a second portion of the mirror (101, 301) by interferometric superposition with a reference wave in a second position of the mirror (101, 301).