Patents by Inventor Hans-Michael STIEPAN

Hans-Michael STIEPAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200011650
    Abstract: A metrology target having a periodic or quasi-periodic structure, which is characterized by a plurality of parameters. At least one of these parameters varies locally monotonically, wherein the maximum size of this variation over a distance of 5 ?m is less than 10% of the size of the at least one parameter. In addition, the metrology target has at least one used structure and at least one auxiliary structure, wherein the auxiliary structure transitions progressively into the used structure with regard to the locally monotonically varying parameter. Also disclosed are an associated method and associated device for characterizing structured elements configured as wafers, masks or CGHs.
    Type: Application
    Filed: September 20, 2019
    Publication date: January 9, 2020
    Inventor: Hans-Michael STIEPAN
  • Patent number: 10509330
    Abstract: In an aspect, a plurality of parameters characteristic of the patterned wafer are determined based on measurements of the intensity of electromagnetic radiation after the diffraction thereof at the patterned wafer. The intensity measurements are carried out for at least one used structure and at least one auxiliary structure. The parameters are determined based on intensity values measured during the intensity measurements for respectively different combinations of wavelength, polarization and/or order of diffraction, and also on the basis of correspondingly calculated intensity values, with a mathematical optimization method being applied.
    Type: Grant
    Filed: March 12, 2018
    Date of Patent: December 17, 2019
    Assignee: Carl Zeiss SMT GmbH
    Inventors: Hans-Michael Stiepan, Andy Zott, Ulrich Mantz
  • Patent number: 10502545
    Abstract: A measurement arrangement and a method for measuring a wavefront aberration of an imaging optical system (10) of a microlithographic projection exposure apparatus. The method includes separate measurement of respective wavefront aberrations of different partial arrangements (M1; M2; M3; M1, M3) of the optical elements.
    Type: Grant
    Filed: November 20, 2017
    Date of Patent: December 10, 2019
    Assignee: CARL ZEISS SMT GMBH
    Inventors: Ulrich Wegmann, Hans-Michael Stiepan, Jochen Hetzler
  • Patent number: 10422718
    Abstract: A test appliance and a method for testing a mirror, e.g., a mirror of a microlithographic projection exposure apparatus. The test appliance has a computer-generated hologram (CGH), and a test can be carried out on at least a portion of the mirror by way of an interferometric superposition of a test wave that is directed onto the mirror by this computer-generated hologram and a reference wave. Here, the computer-generated hologram (CGH) (120, 320) is designed in such a way that, during operation of the appliance, it provides a first test wave for testing a first portion of the mirror (101, 301) by interferometric superposition with a reference wave in a first position of the mirror (101, 301) and at least a second test wave for testing a second portion of the mirror (101, 301) by interferometric superposition with a reference wave in a second position of the mirror (101, 301).
    Type: Grant
    Filed: August 14, 2017
    Date of Patent: September 24, 2019
    Assignee: CARL ZEISS SMT GMBH
    Inventors: Hans-Michael Stiepan, Jochen Hetzler, Sebastian Fuchs
  • Patent number: 10337850
    Abstract: A measurement arrangement (10) and an associated method for interferometrically determining the surface shape (12) of a test object (14) includes a light source (16) providing an input wave (18) and a diffractive optical element (24). The diffractive optical element is configured to produce in each case by way of diffraction from the input wave a test wave (26), which is directed at the test object (14) and has a wavefront that is adapted at least partially to a desired shape of the optical surface, and a reference wave (28). The measurement arrangement furthermore includes a reflective optical element (30) that back-reflects the reference wave (28) and a capture device (36) that captures an interferogram produced by superposing the test wave after interaction with the test object and the back-reflected reference wave (28), in each case after a further diffraction at the diffractive optical element in a capture plane (48).
    Type: Grant
    Filed: November 22, 2017
    Date of Patent: July 2, 2019
    Assignee: CARL ZEISS SMT GMBH
    Inventors: Jochen Hetzler, Sebastian Fuchs, Hans-Michael Stiepan, Karl-Heinz Schuster
  • Publication number: 20180217509
    Abstract: A method includes determining at least one characteristic variable which is characteristic of a patterned wafer based on a plurality of measurements of the intensity of electromagnetic radiation after the diffraction thereof at the patterned wafer. The intensity measurements are carried out for at least two different orders of diffraction. For at least two regions on the wafer, in each case a value of the characteristic variable that is assigned to the respective region is determined on the basis of a comparison of the measurement values obtained in the intensity measurements for the at least two orders of diffraction. The intensity measurements for determining the characteristic variable for the at least two regions on the wafer are carried out simultaneously.
    Type: Application
    Filed: March 27, 2018
    Publication date: August 2, 2018
    Inventor: Hans-Michael Stiepan
  • Publication number: 20180203369
    Abstract: In an aspect, a plurality of parameters characteristic of the patterned wafer are determined based on measurements of the intensity of electromagnetic radiation after the diffraction thereof at the patterned wafer. The intensity measurements are carried out for at least one used structure and at least one auxiliary structure. The parameters are determined based on intensity values measured during the intensity measurements for respectively different combinations of wavelength, polarization and/or order of diffraction, and also on the basis of correspondingly calculated intensity values, with a mathematical optimization method being applied.
    Type: Application
    Filed: March 12, 2018
    Publication date: July 19, 2018
    Inventors: Hans-Michael Stiepan, Andy Zott, Ulrich Mantz
  • Publication number: 20180106591
    Abstract: A measurement arrangement (10) and an associated method for interferometrically determining the surface shape (12) of a test object (14) includes a light source (16) providing an input wave (18) and a diffractive optical element (24). The diffractive optical element is configured to produce in each case by way of diffraction from the input wave a test wave (26), which is directed at the test object (14) and has a wavefront that is adapted at least partially to a desired shape of the optical surface, and a reference wave (28). The measurement arrangement furthermore includes a reflective optical element (30) that back-reflects the reference wave (28) and a capture device (36) that captures an interferogram produced by superposing the test wave after interaction with the test object and the back-reflected reference wave (28), in each case after a further diffraction at the diffractive optical element in a capture plane (48).
    Type: Application
    Filed: November 22, 2017
    Publication date: April 19, 2018
    Inventors: Jochen HETZLER, Sebastian FUCHS, Hans-Michael STIEPAN, Karl-Heinz SCHUSTER
  • Publication number: 20180087891
    Abstract: A measurement arrangement and a method for measuring a wavefront aberration of an imaging optical system (10) of a microlithographic projection exposure apparatus. The method includes separate measurement of respective wavefront aberrations of different partial arrangements (M1; M2; M3; M1, M3) of the optical elements.
    Type: Application
    Filed: November 20, 2017
    Publication date: March 29, 2018
    Inventors: Ulrich WEGMANN, Hans-Michael STIEPAN, Jochen HETZLER
  • Publication number: 20170343449
    Abstract: A test appliance and a method for testing a mirror, e.g., a mirror of a microlithographic projection exposure apparatus. The test appliance has a computer-generated hologram (CGH), and a test can be carried out on at least a portion of the mirror by way of an interferometric superposition of a test wave that is directed onto the mirror by this computer-generated hologram and a reference wave. Here, the computer-generated hologram (CGH) (120, 320) is designed in such a way that, during operation of the appliance, it provides a first test wave for testing a first portion of the mirror (101, 301) by interferometric superposition with a reference wave in a first position of the mirror (101, 301) and at least a second test wave for testing a second portion of the mirror (101, 301) by interferometric superposition with a reference wave in a second position of the mirror (101, 301).
    Type: Application
    Filed: August 14, 2017
    Publication date: November 30, 2017
    Inventors: Hans-Michael STIEPAN, Jochen HETZLER, Sebastian FUCHS