Patents by Inventor Hans Millonig

Hans Millonig has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and method for forming a semiconductor device
    Patent number: 9418850
    Abstract: A method includes forming an emitter at the first side of a semiconductor substrate by doping, wherein the dopant concentration is higher in the emitter than in the edge region; growing an oxide layer on the first side by annealing, wherein the oxide layer has a first thickness in a first region covering the emitter, and a second thickness in a second region covering the edge region. The first thickness is larger than the second thickness. Heavy metal ions are implanted through the first side with a first energy, and with a second energy, wherein the first energy and the second energy are different, such that the implanted heavy metal concentration in the edge region is higher than in the emitter due to an absorption of the oxide layer covering the emitter, resulting in a lower charge carrier lifetime in the edge region than in the emitter.
    Type: Grant
    Filed: September 29, 2015
    Date of Patent: August 16, 2016
    Assignee: Infineon Technologies AG
    Inventors: Oliver Humbel, Hans Millonig
  • Adjusting the charge carrier lifetime in a bipolar semiconductor device
    Patent number: 9349799
    Abstract: Disclosed are a method and a semiconductor device. The method includes implanting recombination center atoms via a first surface into a semiconductor body, and causing the implanted recombination center atoms to diffuse in the semiconductor body in a first diffusion process.
    Type: Grant
    Filed: August 13, 2015
    Date of Patent: May 24, 2016
    Assignee: Infineon Technologies AG
    Inventors: Gerhard Schmidt, Josef Georg Bauer, Mario Barusic, Oliver Humbel, Hans Millonig, Werner Schustereder
  • Semiconductor Device and Method for Forming a Semiconductor Device
    Publication number: 20160111289
    Abstract: A method includes forming an emitter at the first side of a semiconductor substrate by doping, wherein the dopant concentration is higher in the emitter than in the edge region; growing an oxide layer on the first side by annealing, wherein the oxide layer has a first thickness in a first region covering the emitter, and a second thickness in a second region covering the edge region. The first thickness is larger than the second thickness. Heavy metal ions are implanted through the first side with a first energy, and with a second energy, wherein the first energy and the second energy are different, such that the implanted heavy metal concentration in the edge region is higher than in the emitter due to an absorption of the oxide layer covering the emitter, resulting in a lower charge carrier lifetime in the edge region than in the emitter.
    Type: Application
    Filed: September 29, 2015
    Publication date: April 21, 2016
    Inventors: Oliver Humbel, Hans Millonig
  • Adjusting the Charge Carrier Lifetime in a Bipolar Semiconductor Device
    Publication number: 20160049474
    Abstract: Disclosed are a method and a semiconductor device. The method includes implanting recombination center atoms via a first surface into a semiconductor body, and causing the implanted recombination center atoms to diffuse in the semiconductor body in a first diffusion process.
    Type: Application
    Filed: August 13, 2015
    Publication date: February 18, 2016
    Inventors: Gerhard Schmidt, Josef Georg Bauer, Mario Barusic, Oliver Humbel, Hans Millonig, Werner Schustereder