Abstract: A method for producing a plurality of semiconductor wafers includes processing a single crystal. The single crystal is provided in a grown state and has a central longitudinal axis with an orientation that deviates from a sought orientation of a crystal lattice of the semiconductor wafers. A block is sliced from the single crystal along cutting planes perpendicular to a crystallographic axis corresponding to the sought orientation of the crystal lattice of the semiconductor wafers. A lateral surface of the block is ground around the crystallographic axis. A plurality of semiconductor wafers are then sliced from the ground block along cutting planes perpendicular to the crystallographic axis.

Abstract: A method for simultaneously cutting a compound rod of semiconductor material into a multiplicity of wafers. The method includes selecting a first workpiece and a second workpiece, each having two end surfaces; grinding at least one of the two end surfaces of each workpiece so as to create a ground end surface on each workpiece; cementing the ground end surface of the first workpiece to the ground end surface of second workpiece using a fastener so as to produce a compound rod piece having a longitudinal axis, wherein the fastener is disposed between the workpieces so as create a distance between the workpieces; fixing the compound rod piece in a longitudinal direction on a mounting plate; clamping the mounting plate with the compound rod piece in a wire saw; and cutting the compound rod piece perpendicularly to the longitudinal axis using the wire saw.

Abstract: An epitaxially coated silicon wafer comprises a plane surface misoriented relative to a {110} crystal plane, wherein the <110> direction of the single silicon crystal is tilted away by the angle ? from the normal to the wafer surface and the projection of the tilted <110> direction forms an angle ? with the direction <?110> in the wafer, and ? is given by 0???3° and 45°???90°, as well as for all symmetrically equivalent directions.

Abstract: A method for producing a plurality of semiconductor wafers includes processing a single crystal. The single crystal is provided in a grown state and has a central longitudinal axis with an orientation that deviates from a sought orientation of a crystal lattice of the semiconductor wafers. A block is sliced from the single crystal along cutting planes perpendicular to a crystallographic axis corresponding to the sought orientation of the crystal lattice of the semiconductor wafers. A lateral surface of the block is ground around the crystallographic axis. A plurality of semiconductor wafers are then sliced from the ground block along cutting planes perpendicular to the crystallographic axis.

Abstract: A method for simultaneously cutting a compound rod of semiconductor material into a multiplicity of wafers. The method includes selecting a first workpiece and a second workpiece, each having two end surfaces; grinding at least one of the two end surfaces of each workpiece so as to create a ground end surface on each workpiece; cementing the ground end surface of the first workpiece to the ground end surface of second workpiece using a fastener so as to produce a compound rod piece having a longitudinal axis, wherein the fastener is disposed between the workpieces so as create a distance between the workpieces; fixing the compound rod piece in a longitudinal direction on a mounting plate; clamping the mounting plate with the compound rod piece in a wire saw; and cutting the compound rod piece perpendicularly to the longitudinal axis using the wire saw.

Abstract: An epitaxially coated silicon wafer comprises a plane surface misoriented relative to a {110} crystal plane, wherein the <110> direction of the single silicon crystal is tilted away by the angle ? from the normal to the wafer surface and the projection of the tilted <110> direction forms an angle ? with the direction <?110> in the wafer, and ? is given by 0???3° and 45°???90°, as well as for all symmetrically equivalent directions.

Abstract: The disclosure relates to an apparatus and a method for producing a single crystal of semiconductor material. The apparatus comprises a chamber and a crucible which is arranged in the chamber and is enclosed by a crucible heater, a radiation shield for shielding a growing single crystal and thermal insulation between the crucible heater and an inner wall of the chamber. The apparatus may include a resilient seal which seals a gap between the inner wall and the thermal insulation and forms an obstacle for the transport of gaseous iron carbonyls to the single crystal. The disclosure also relates to a method for producing a single crystal of semiconductor material by using the apparatus, the single crystal which is produced and a semiconductor wafer cut therefrom.

Abstract: The disclosure relates to an apparatus and a method for producing a single crystal of semiconductor material. The apparatus comprises a chamber and a crucible which is arranged in the chamber and is enclosed by a crucible heater, a radiation shield for shielding a growing single crystal and thermal insulation between the crucible heater and an inner wall of the chamber. The apparatus may include a resilient seal which seals a gap between the inner wall and the thermal insulation and forms an obstacle for the transport of gaseous iron carbonyls to the single crystal. The disclosure also relates to a method for producing a single crystal of semiconductor material by using the apparatus, the single crystal which is produced and a semiconductor wafer cut therefrom.

Abstract: A method for pulling a silicon single crystal has the single crystal being pulled at a speed defined as maximum pulling speed in the vertical direction with respect to a silicon melt held in a crucible. The value of the maximum pulling speed is approximately proportional to the axial temperature gradient in the growing single crystal.

Abstract: A process and an apparatus reduces the oxygen incorporation into a single crystal of silicon which is drawn by the Czochralski method. If a molding is immersed at least temporarily in the melt between the single crystal and the crucible wall during drawing of the single crystal, the oxygen content of the single crystal is reduced compared with the oxygen content of a single crystal which has been drawn without the use of the molding.