Abstract: A method of scribing a substrate along a scribeline includes causing a laser beam to impinge on the major surface, the point of impingement of the beam constituting a light spot, the substrate being positioned with respect to the laser beam such that the light spot is disposed proximal to the scribeline. The substrate and laser beam are moved relative to one another, such that the light spot is caused to translate substantially along the scribeline, whereby localized energy is transferred from the laser beam to the substrate along the course of the scribeline. The positioning of the light spot with respect to the scribeline is monitored by imaging a flash of light produced during the relative motion. Image recognition software is used to analyze the image and determine momentary position information. The momentary position information is used to regulate a laser beam position setpoint.

Abstract: A method and arrangement for treating a substrate processed using a laser beam, wherein said substrate comprises at least a body of semiconductor material. The method comprises a step of etching said substrate for removing from said body of semiconductor material recast material deposited on said body during said laser processing. The step of etching is controlled for removing in addition to said recast layer, at least a part of said semiconductor material of said body for improving mechanical strength of said substrate.

Abstract: A method of separating semiconductor elements formed in a wafer of semiconductor material using a laser producing a primary laser beam, and an arrangement and diffraction grating used in the method. The at least one primary laser beam is split into a plurality of secondary laser beams using a first diffraction grating having at least a first grating structure relative to the wafer, by impinging the at least one primary laser beam on the first grating structure. At least one first score is formed by moving the laser relative to the wafer in a first direction. The method further forms at least one second score by moving the laser relative to the wafer in a second direction. Before moving the laser relative to the wafer in the second direction, the method alters the first grating structure to a second grating structure relative to the wafer.