Patents by Inventor Hans-Peter Felsl
Hans-Peter Felsl has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11018252Abstract: A power semiconductor transistor includes a semiconductor body having a front side and a backside with a backside surface. The semiconductor body includes a drift region of a first conductivity type and a field stop region of the first conductivity type. The field stop region is arranged between the drift region and the backside and includes, in a cross-section along a vertical direction from the backside to the front side, a concentration profile of donors of the first conductivity type that has: a first local maximum at a first distance from the backside surface, a front width at half maximum associated with the first local maximum, and a back width at half maximum associated with the first local maximum. The front width at half maximum is smaller than the back width at half maximum and amounts to at least 8% of the first distance.Type: GrantFiled: September 23, 2019Date of Patent: May 25, 2021Assignee: Infineon Technologies AGInventors: Hans Peter Felsl, Moriz Jelinek, Volodymyr Komarnitskyy, Konrad Schraml, Hans-Joachim Schulze
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Publication number: 20200098911Abstract: A power semiconductor transistor includes a semiconductor body having a front side and a backside with a backside surface. The semiconductor body includes a drift region of a first conductivity type and a field stop region of the first conductivity type. The field stop region is arranged between the drift region and the backside and includes, in a cross-section along a vertical direction from the backside to the front side, a concentration profile of donors of the first conductivity type that has: a first local maximum at a first distance from the backside surface, a front width at half maximum associated with the first local maximum, and a back width at half maximum associated with the first local maximum. The front width at half maximum is smaller than the back width at half maximum and amounts to at least 8% of the first distance.Type: ApplicationFiled: September 23, 2019Publication date: March 26, 2020Inventors: Hans Peter Felsl, Moriz Jelinek, Volodymyr Komarnitskyy, Konrad Schraml, Hans-Joachim Schulze
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Patent number: 9741795Abstract: An IGBT includes at least one first type transistor cell, including a base region, first and second emitter regions, and a body region arranged between the first emitter region and base region. The base region is arranged between the body region and second emitter region. A gate electrode adjacent the body region is dielectrically insulated from the body region by a gate dielectric. A base electrode adjacent the base region is dielectrically insulated from the base region by a base electrode dielectric. The base region has a first base region section adjoining the base electrode dielectric and a second base region section arranged between the second emitter region and the first base region section. A ratio between the doping concentration of the first base region section and the doping concentration of the second base region section is at least 10. The base electrode dielectric is thicker than the gate dielectric.Type: GrantFiled: September 15, 2015Date of Patent: August 22, 2017Assignee: Infineon Technologies AGInventors: Christian Philipp Sandow, Hans-Joachim Schulze, Johannes Georg Laven, Franz-Josef Niedernostheide, Frank Pfirsch, Hans-Peter Felsl
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Patent number: 9412854Abstract: An IGBT module is provided. The IGBT module has at least a first individual IGBT with a first softness during switching-off the IGBT module, and at least a second individual IGBT connected in parallel to the at least one first IGBT. The at least one second individual IGBT has a second softness during switching-off the IGBT module which is different than the first softness. Further a circuit and an electronic power device having two individual IGBTs, which are connected in parallel, are provided.Type: GrantFiled: October 20, 2010Date of Patent: August 9, 2016Assignee: Infineon Technologies Austria AGInventors: Hans-Peter Felsl, Hans-Joachim Schulze, Franz-Josef Niedernostheide, Thomas Raker
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Patent number: 9385181Abstract: A semiconductor diode includes a semiconductor body having opposite first and second sides. A first and a second semiconductor region are consecutively arranged along a lateral direction at the second side. The first and second semiconductor regions are of opposite first and second conductivity types and are electrically coupled to an electrode at the second side. The semiconductor diode further includes a third semiconductor region of the second conductivity type buried in the semiconductor body at a distance from the second side. The second and third semiconductor regions are separated from each other.Type: GrantFiled: January 23, 2014Date of Patent: July 5, 2016Assignee: Infineon Technologies AGInventors: Hans Peter Felsl, Elmar Falck, Manfred Pfaffenlehner, Frank Hille, Andreas Haertl, Holger Schulze, Daniel Schloegl
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Patent number: 9349829Abstract: A method of manufacturing a transistor device includes forming a semiconductor heterostructure including a plurality of alternating two-dimensional electron gasses (2DEGs) and two-dimensional hole gasses (2DHGs) extending in parallel at different depths in the semiconductor heterostructure, the 2DEGs forming current channels of the transistor device, forming a source extending into the semiconductor heterostructure in contact with the 2DEGs at a first end of the current channels, forming a drain extending into the semiconductor heterostructure in contact with the 2DEGs at an opposing second end of the current channels, and forming a plurality of spaced apart gate structures extending into the semiconductor heterostructure and including an electrically conductive material separated from the surrounding semiconductor heterostructure by an insulating material.Type: GrantFiled: April 17, 2015Date of Patent: May 24, 2016Assignee: Infineon Technologies Austria AGInventors: Clemens Ostermaier, Gerhard Prechtl, Oliver Haeberlen, Hans Peter Felsl
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Patent number: 9293524Abstract: A semiconductor device has a semiconductor body with bottom and top sides and a lateral surface. An active semiconductor region is formed in the semiconductor body and an edge region surrounds the active semiconductor region. A first semiconductor zone of a first conduction type is formed in the edge region. An edge termination structure having at least N field limiting structures is formed in the edge region. Each of the field limiting structures has a field ring and a separation trench formed in the semiconductor body, where N is at least 1. Each of the field rings has a second conduction type, forms a pn-junction with the first semiconductor zone and surrounds the active semiconductor region. For each of the field limiting structures, the separation trench of that field limiting structure is arranged between the field ring of that field limiting structure and the active semiconductor region.Type: GrantFiled: May 2, 2014Date of Patent: March 22, 2016Assignee: Infineon Technologies AGInventors: Elmar Falck, Wolfgang Roesener, Hans Peter Felsl, Andre Stegner
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Publication number: 20160005818Abstract: An IGBT includes at least one first type transistor cell, including a base region, first and second emitter regions, and a body region arranged between the first emitter region and base region. The base region is arranged between the body region and second emitter region. A gate electrode adjacent the body region is dielectrically insulated from the body region by a gate dielectric. A base electrode adjacent the base region is dielectrically insulated from the base region by a base electrode dielectric. The base region has a first base region section adjoining the base electrode dielectric and a second base region section arranged between the second emitter region and the first base region section. A ratio between the doping concentration of the first base region section and the doping concentration of the second base region section is at least 10. The base electrode dielectric is thicker than the gate dielectric.Type: ApplicationFiled: September 15, 2015Publication date: January 7, 2016Inventors: Christian Philipp Sandow, Hans-Joachim Schulze, Johannes Georg Laven, Franz-Josef Niedernostheide, Frank Pfirsch, Hans-Peter Felsl
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Publication number: 20150318347Abstract: A semiconductor device has a semiconductor body with bottom and top sides and a lateral surface. An active semiconductor region is formed in the semiconductor body and an edge region surrounds the active semiconductor region. A first semiconductor zone of a first conduction type is formed in the edge region. An edge termination structure having at least N field limiting structures is formed in the edge region. Each of the field limiting structures has a field ring and a separation trench formed in the semiconductor body, where N is at least 1. Each of the field rings has a second conduction type, forms a pn-junction with the first semiconductor zone and surrounds the active semiconductor region. For each of the field limiting structures, the separation trench of that field limiting structure is arranged between the field ring of that field limiting structure and the active semiconductor region.Type: ApplicationFiled: May 2, 2014Publication date: November 5, 2015Inventors: Elmar Falck, Wolfgang Roesner, Hans Peter Felsl, Andre Stegner
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Patent number: 9166027Abstract: An IGBT includes at least one first type transistor cell, including a base region, a first emitter region, a body region, and a second emitter region. The body region is arranged between the first emitter region and the base region. The base region is arranged between the body region and the second emitter region. The IGBT further includes a gate electrode adjacent the body region and dielectrically insulated from the body region by a gate dielectric, and a base electrode adjacent the base region and dielectrically insulated from the base region by a base electrode dielectric. The base region has a first base region section adjoining the base electrode dielectric and a second base region section arranged between the second emitter region and the first base region section. A doping concentration of the first base region section is higher than a doping concentration of the second base region section.Type: GrantFiled: September 30, 2013Date of Patent: October 20, 2015Assignee: Infineon Technologies AGInventors: Christian Philipp Sandow, Hans-Joachim Schulze, Johannes Georg Laven, Franz-Josef Niedernostheide, Frank Pfirsch, Hans-Peter Felsl
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Patent number: 9105682Abstract: Disclosed is a semiconductor component that includes a semiconductor body, a first emitter region of a first conductivity type in the semiconductor body, a second emitter region of a second conductivity type spaced apart from the first emitter region in a vertical direction of the semiconductor body, a base region of one conductivity type arranged between the first emitter region and the second emitter region, and at least two higher doped regions of the same conductivity type as the base region and arranged in the base region. The at least two higher doped regions are spaced apart from one another in a lateral direction of the semiconductor body and separated from one another only by sections of the base region.Type: GrantFiled: February 28, 2011Date of Patent: August 11, 2015Assignee: Infineon Technologies Austria AGInventors: Hans-Peter Felsl, Thomas Raker, Hans-Joachim Schulze, Franz-Josef Niedernostheide
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Publication number: 20150221748Abstract: A method of manufacturing a transistor device includes forming a semiconductor heterostructure including a plurality of alternating two-dimensional electron gasses (2DEGs) and two-dimensional hole gasses (2DHGs) extending in parallel at different depths in the semiconductor heterostructure, the 2DEGs forming current channels of the transistor device, forming a source extending into the semiconductor heterostructure in contact with the 2DEGs at a first end of the current channels, forming a drain extending into the semiconductor heterostructure in contact with the 2DEGs at an opposing second end of the current channels, and forming a plurality of spaced apart gate structures extending into the semiconductor heterostructure and including an electrically conductive material separated from the surrounding semiconductor heterostructure by an insulating material.Type: ApplicationFiled: April 17, 2015Publication date: August 6, 2015Inventors: Clemens Ostermaier, Gerhard Prechtl, Oliver Haeberlen, Hans Peter Felsl
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Publication number: 20150206983Abstract: A semiconductor diode includes a semiconductor body having opposite first and second sides. A first and a second semiconductor region are consecutively arranged along a lateral direction at the second side. The first and second semiconductor regions are of opposite first and second conductivity types and are electrically coupled to an electrode at the second side. The semiconductor diode further includes a third semiconductor region of the second conductivity type buried in the semiconductor body at a distance from the second side. The second and third semiconductor regions are separated from each other.Type: ApplicationFiled: January 23, 2014Publication date: July 23, 2015Inventors: Hans Peter Felsl, Elmar Falck, Manfred Pfaffenlehner, Frank Hille, Andreas Haertl, Holger Schulze, Daniel Schloegl
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Patent number: 9048095Abstract: A method of manufacturing a semiconductor device includes forming a semiconductor diode by forming a drift region, forming a first semiconductor region of a first conductivity type in or on the drift region and electrically coupling the first semiconductor region to a first terminal via a first surface of a semiconductor body, etching a trench into the semiconductor body, and forming a channel region of a second conductivity type in the trench and electrically coupling the channel region to the first terminal via the first surface of the semiconductor body. A first side of the channel region adjoins the first semiconductor region.Type: GrantFiled: August 28, 2014Date of Patent: June 2, 2015Assignee: Infineon Technologies AGInventors: Anton Mauder, Franz Hirler, Hans Peter Felsl, Hans-Joachim Schulze
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Patent number: 9035355Abstract: A transistor device includes a semiconductor heterostructure including a plurality of alternating two-dimensional electron gasses (2DEGs) and two-dimensional hole gasses (2DHGs) extending in parallel at different depths in the semiconductor heterostructure. The 2DEGs form current channels of the transistor device. The transistor device further includes a source extending into the semiconductor heterostructure in contact with the 2DEGs at a first end of the current channels, and a drain extending into the semiconductor heterostructure in contact with the 2DEGs at an opposing second end of the current channels. The transistor device also includes a plurality of spaced apart gate structures extending into the semiconductor heterostructure and including an electrically conductive material separated from the surrounding semiconductor heterostructure by an insulating material.Type: GrantFiled: June 18, 2012Date of Patent: May 19, 2015Assignee: Infineon Technologies Austria AGInventors: Clemens Ostermaier, Gerhard Prechtl, Oliver Haeberlen, Hans Peter Felsl
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Publication number: 20150091053Abstract: An IGBT includes at least one first type transistor cell, including a base region, a first emitter region, a body region, and a second emitter region. The body region is arranged between the first emitter region and the base region. The base region is arranged between the body region and the second emitter region. The IGBT further includes a gate electrode adjacent the body region and dielectrically insulated from the body region by a gate dielectric, and a base electrode adjacent the base region and dielectrically insulated from the base region by a base electrode dielectric. The base region has a first base region section adjoining the base electrode dielectric and a second base region section arranged between the second emitter region and the first base region section. A doping concentration of the first base region section is higher than a doping concentration of the second base region section.Type: ApplicationFiled: September 30, 2013Publication date: April 2, 2015Inventors: Christian Philipp Sandow, Hans-Joachim Schulze, Johannes Georg Laven, Franz-Josef Niedernostheide, Frank Pfirsch, Hans-Peter Felsl
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Publication number: 20140370693Abstract: A method of manufacturing a semiconductor device includes forming a semiconductor diode by forming a drift region, forming a first semiconductor region of a first conductivity type in or on the drift region and electrically coupling the first semiconductor region to a first terminal via a first surface of a semiconductor body, etching a trench into the semiconductor body, and forming a channel region of a second conductivity type in the trench and electrically coupling the channel region to the first terminal via the first surface of the semiconductor body. A first side of the channel region adjoins the first semiconductor region.Type: ApplicationFiled: August 28, 2014Publication date: December 18, 2014Inventors: Anton Mauder, Franz Hirler, Hans Peter Felsl, Hans-Joachim Schulze
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Patent number: 8872264Abstract: A semiconductor device includes a first trench and a second trench extending into a semiconductor body from a surface. A body region of a first conductivity type adjoins a first sidewall of the first trench and a first sidewall of the second trench, the body region including a channel portion adjoining to a source structure and being configured to be controlled in its conductivity by a gate structure. The channel portion is formed at the first sidewall of the second trench and is not formed at the first sidewall of the first trench. An electrically floating semiconductor zone of the first conductivity type adjoins the first trench and has a bottom side located deeper within the semiconductor body than the bottom side of the body region.Type: GrantFiled: June 13, 2013Date of Patent: October 28, 2014Assignee: Infineon Technologies Austria AGInventors: Frank Pfirsch, Maria Cotorogea, Franz Hirler, Franz-Josef Niedernostheide, Thomas Raker, Hans-Joachim Schulze, Hans Peter Felsl
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Patent number: 8860025Abstract: A semiconductor device includes a semiconductor diode. The semiconductor diode includes a drift region and a first semiconductor region of a first conductivity type formed in or on the drift region. The first semiconductor region is electrically coupled to a first terminal via a first surface of a semiconductor body. The semiconductor diode includes a channel region of a second conductivity type electrically coupled to the first terminal, wherein a bottom of the channel region adjoins the first semiconductor region. A first side of the channel region adjoins the first semiconductor region.Type: GrantFiled: September 7, 2011Date of Patent: October 14, 2014Assignee: Infineon Technologies AGInventors: Anton Mauder, Franz Hirler, Hans-Peter Felsl, Hans-Joachim Schulze
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Patent number: 8853774Abstract: A semiconductor device includes a first transistor cell including a first gate electrode in a first trench. The semiconductor device further includes a second transistor cell including a second gate electrode in a second trench, wherein the first and second gate electrodes are electrically connected. The semiconductor device further includes a third trench between the first and second trenches, wherein the third trench extends deeper into a semiconductor body from a first side of the semiconductor body than the first and second trenches. The semiconductor device further includes a dielectric in the third trench covering a bottom side and walls of the third trench.Type: GrantFiled: November 30, 2012Date of Patent: October 7, 2014Assignee: Infineon Technologies AGInventors: Maria Cotorogea, Hans Peter Felsl, Yvonne Gawlina, Francisco Javier Santos Rodriguez, Hans-Joachim Schulze, Georg Seibert, Andre Rainer Stegner, Wolfgang Wagner