Abstract: A bulk acoustic wave resonator comprising a substrate, a Bragg reflector, a top and a bottom electrode and a piezoelectric layer with means for suppression of the pass-band ripples in a bulk acoustic wave filter. The means for absorbing or scattering the spurious modes are a roughened rear side of the substrate, an absorbing layer disposed on the rear side of the substrate and/or an absorbing layer disposed on the front side of the substrate.

Abstract: The invention refers to a method for the fabrication of a thin film acoustic reflector stack with alternating layers of a first and a second material having different acoustic characteristic impedances, wherein the layers are deposited alternately by a reactive pulsed dc magnetron sputtering process. The invention further comprises an acoustic reflector stack fabricated thereby and an arrangement for performing the method.

Abstract: An organic electroluminescent device for emitting light, comprising a substrate (1), a first electrode (2) and a second electrode (4) and having at least one light-emitting layer (3) arranged between the electrodes (2, 4), wherein the first electrode (2), which is intended to transmit the light (5) generated in the organic light-emitting layer (3), comprises a current distributing layer (21, 22), to stimulate uniform light emission, having a structure of conductor tracks of titanium nitride (21) intended to conduct an operating current, and a plurality of regions of titanium oxide (22) adjoining the structure of conductor tracks and intended to transmit the light (5) generated.

Abstract: An electro-acoustic resonator (1, 8, 17) of the membrane or FBAR type (1) or the solidly-mounted or SBAR type (8), with electrodes comprising a single conducting layer or multiple conducting layers, i.e. sandwich construction (17) with an optimum coupling factor kr and thus an improved filter bandwidth. The optimum coupling factor kr is achieved by the arrangement that the top electrode (6, 15, 25) is thinner than the bottom electrode (4, 13, 23). The coupling factor is independent of the resonator's layout defined by the mask.

Abstract: A ladder filter comprising a plurality of bulk acoustic wave resonators, the resonators comprising a plurality of series resonators series resonators in series between an input terminal and an output terminal of the filter, and one or more shunt resonators each connected between a junction between two series resonators and a common terminal, the series resonators comprising an input series resonator connected to the input terminal and an output series resonator connected to the output terminal, and wherein the shunt resonators are designed to satisfy: a unity aspect ratio and wherein the series resonators are designed to satisfy an aspect ratio different from unity. The aspect ratio is defined as the ratio of length to width of the resonator.

Abstract: In order to provide a resonator structure (100) in particular a bulk-acoustic-wave (BAW) resonator, such as a film BAW resonator (FBAR) or a solidly-mounted BAW resonator (SBAR), comprising at least one substrate (10); at least one reflector layer (20) applied or deposited on the substrate (10); at least one bottom electrode layer (30), in particular bottom electrode, applied or deposited on the reflector layer (20); at least one piezoelectric layer (40), in particular C-axis normal piezoelectric layer, applied or deposited on the bottom electrode layer (30); at least one top electrode layer (50), in particular top electrode, applied or deposited on the bottom electrode layer (30) and/or on the piezoelectric layer (40) such that the piezoelectric layer (40) is in between the bottom electrode layer (30) and the top electrode layer (50), it is proposed that at least one dielectric layer (63, 65) applied or deposited in and/or on at least one space in at least one region of non-overlap between the bottom electro

Abstract: In order to provide a resonator structure (100) in particular a bulk-acoustic-wave (BAW) resonator, such as a film BAW resonator (FBAR) or a solidly-mounted BAW resonator (SBAR), comprising at least one substrate (10); at least one reflector layer (20) applied or deposited on the substrate (10); at least one bottom electrode layer (30), in particular bottom electrode, applied or deposited on the reflector layer (20); at least one piezoelectric layer (40), in particular C-axis normal piezoelectric layer, applied or deposited on the bottom electrode layer (30); at least one top electrode layer (50), in particular top electrode, applied or deposited on the bottom electrode layer (30) and/or on the piezoelectric layer (40) such that the piezoelectric layer (40) is in between the bottom electrode layer (30) and the top electrode layer (50), it is proposed that at least one dielectric layer (63, 65) applied or deposited in and/or on at least one space in at least one region of non-overlap between the bottom electro

Abstract: A filter structure, comprising a first signal line, a second signal line, a third signal line and a fourth signal line, said first and third signal lines defining an input port and said second and fourth signal lines defining an output port of a section of said filter structure, said section being defined by a first bulk acoustic wave resonator (A) which is connected between said first signal line and said second signal line, a second bulk acoustic wave resonator (G) which is connected between said third signal line and said fourth signal line, a third bulk acoustic wave resonator (C) which is connected between said first signal line and said fourth signal line, and a fourth bulk acoustic wave resonator (E) which is connected between said second signal line and said third signal line; is characterized in that a frequency pulling factor defined d of at least one of said acoustic wave resonators is non-zero, said frequency pulling factor d being defined by for first and second bulk acoustic wave resonators havi

Abstract: An electro-acoustic resonator (1, 8, 17) of the membrane or FBAR type (1) or the solidly-mounted or SBAR type (8), with electrodes comprising a single conducting layer or multiple conducting layers, i.e. sandwich construction (17) with an optimum coupling factor kr and thus an improved filter bandwidth. The optimum coupling factor kr is achieved by the arrangement that the top electrode (6, 15, 25) is thinner than the bottom electrode (4, 13, 23). The coupling factor is independent of the resonator's layout defined by the mask.

Abstract: The invention describes a filter arrangement comprising a bandpass filter and a notch filter. The coupling of a notch filter, which consists of a capacitor and an inductance, to a bandpass filter comprising resonators achieves a better suppression outside the passband. The two filters can be manufactured on one substrate (1) in a small space through the use of thin-film techniques. Moreover, a transmitter, a receiver, a mobile telephone appliance, and a wireless data transfer system with such a filter arrangement are disclosed, as is a method of manufacturing such a filter arrangement.

Abstract: The invention describes a tunable filter arrangement with at least two resonators which are coupled to one another and of which at least one is connected to a capacitor with tunable capacitance. The electrical properties of the resonator, and thus the overall filter characteristic, can be changed through a change in the capacitance of the capacitor. Furthermore, a transmitter, a receiver, a mobile telephone device, and a wireless data transmission system comprising such a filter arrangement are disclosed, as is a tunable bulk acoustic wave resonator.

Abstract: A thin-film coupler with a carrier substrate (1) and two strip lines disposed thereon, of which one represents the main coupler loop (2) and one the auxiliary coupler loop (3). The use of inexpensive carrier substrate materials and a compact construction are made possible through an integration of a strip line, a coil, or an LC combination into the auxiliary coupler loop (3). The integration of these components (4) achieves a phase shift in the frequency of the signal coupled out so that a broadband coupler is obtained which exhibits an identical coupling at at least two frequencies.

Abstract: The invention describes a tunable filter arrangement with a plurality of resonators which are coupled to one another and of which there is at least one which comprises a piezoelectric component made of a ferroelectric material and to which a DC voltage source is connected. The application of a DC voltage to the resonator renders it possible to change its electrical properties and thus the overall filter characteristic. Furthermore, a transmitter, a receiver device, and a mobile telephone device with such a filter arrangement are disclosed, aswell as a tunable bulk acoustic wave resonator.

Abstract: A zero-IF-converter, particularly for digital satellite receivers, comprising a thin-film component including at least two RC filters each including a resistor and a capacitor which each comprise a lower electrode, an upper electrode and a dielectric material, said RC filters being arranged on a common substrate, is characterized by a constant amplitude and phase relationship between the base band signals I and Q.

Abstract: The invention relates to a passive ceramic component with a carrier substrate, at least one first electrode, at least one first barrier layer, at least one dielectric, and at least one second electrode. A metal, an alloy, or a conductive oxide is used for the barrier layer.

Abstract: The invention describes a filter arrangement as well as an electronic component, each with a bulk acoustic wave resonator unit which is present on a carrier substrate (1). A reflection element (2) is provided between the carrier substrate (1) and the bulk acoustic wave resonator unit for the purpose of acoustic insulation of the generated oscillations. This reflection element (2) may consist either of several layers of alternately high and low impedance or, if the acoustically reflecting substance has a sufficiently low impedance, of a single layer. In addition, a mobile telephone device, a transmitter, a receiver, and a wireless data transmission system as well as a method of manufacturing an electronic component are described.

Abstract: The invention relates to a passive ceramic component with a carrier substrate (1), a first and a second electrode (2, 6), and a ferroelectric dielectric (5). The electrodes (2, 6) and the dielectric (5) preferably comprise a multilayer structure with at least a first and a second layer. The capacitance value C of the capacitor can be varied through the application of a voltage to the electrodes (2, 6), owing to the field dependence of the dielectric constant ≮r of the dielectric (5).

Abstract: The invention describes a method of manufacturing an electronic thin-film component comprising at least one stripline. In this method, first a metallic base layer is deposited on a substrate layer, a photoresist layer is applied to this metallic base layer, and structured in accordance with the stripline(s) to be formed. An electroconductive layer is deposited on the exposed regions of the metallic base layer. Subsequently, the photoresist is removed and the metallic base layer is etched. This method has the advantage that less metal is required as compared to other thin-film methods. Overlapping areas of the striplines can be formed readily, economically, and with small current capacitances by means of bridges. By means of the method described herein, passive components, such as thin-film couplers for high-frequency applications or thin-film coils can be readily obtained.

Abstract: The invention describes a filter arrangement comprising a bandpass filter and a notch filter. The coupling of a notch filter, which consists of a capacitor and an inductance, to a bandpass filter comprising resonators achieves a better suppression outside the passband.

Abstract: The invention describes a tunable filter arrangement with at least two resonators which are coupled to one another and of which at least one is connected to a capacitor with tunable capacitance. The electrical properties of the resonator, and thus the overall filter characteristic, can be changed through a change in the capacitance of the capacitor.