Abstract: Methods of making a sharp pointed structure (19), such as a sharp pointed structure in a semiconductor, includes providing a substrate (14) and then depositing an oxide layer (16), such as silicon oxide or silicon nitride, on the substrate (14) and depositing a low contrast photoresist (17) on the oxide layer (16). The low contrast photoresist (17) is then exposed to optical energy through a reticle (21), with the reticle (21) having a partially triangular shape (22), such as an equilateral triangle with a tip. The low contrast photoresist (17) is developed and the oxide layer (16) is etched to form the sharp pointed structure (19). Additionally, a film is deposited (15), such as a magnetoresistive layer, between the substrate (14) and the oxide layer (16). The low contrast photoresist (17) is removed and the film (15) is etched to create a sharp pointed film structure (23) in the film (15).

Abstract: A method processes a thick TiW metal layer (12) on a dielectric layer (15), where the dielectric layer (15) has been deposited on a substrate (14), such as a silicon substrate. The method deposits the TiW metal layer (12) onto the dielectric layer (15), such as silicon dioxide or silicon nitride, and then deposits a photoresist (10) over the TiW metal layer (12). The method removes substantially all of the TiW metal layer (12) not in contact with the photoresist (10) with a uniform etch, such as not more than 80% to 90% of the deposited TiW metal layer. Then, the TiW metal layer (12) is selectively etched to the dielectric layer (15), to remove the TiW metal layer (12) faster than the dielectric layer (15), such as 2.7 times faster.

Abstract: Methods of making a sharp pointed structure (19), such as a sharp pointed structure in a semiconductor, includes providing a substrate (14) and then depositing an oxide layer (16), such as silicon oxide or silicon nitride, on the substrate (14) and depositing a low contrast photoresist (17) on the oxide layer (16). The low contrast photoresist (17) is then exposed to optical energy through a reticle (21), with the reticle (21) having a partially triangular shape (22), such as an equilateral triangle with a tip. The low contrast photoresist (17) is developed and the oxide layer (16) is etched to form the sharp pointed structure (19). Additionally, a film is deposited (15), such as a magnetoresistive layer, between the substrate (14) and the oxide layer (16). The low contrast photoresist (17) is removed and the film (15) is etched to create a sharp pointed film structure (23) in the film (15).

Abstract: A method processes a thick TiW metal layer (12) on a dielectric layer (15), where the dielectric layer (15) has been deposited on a substrate (14), such as a silicon substrate. The method deposits the TiW metal layer (12) onto the dielectric layer (15), such as silicon dioxide or silicon nitride, and then deposits a photoresist (10) over the TiW metal layer (12). The method removes substantially all of the TiW metal layer (12) not in contact with the photoresist (10) with a uniform etch, such as not more than 80% to 90% of the deposited TiW metal layer. Then, the TiW metal layer (12) is selectively etched to the dielectric layer (15), to remove the TiW metal layer (12) faster than the dielectric layer (15), such as 2.7 times faster.

Abstract: A process forms electrical interconnects between memory bits in a magnetoresistive memory device. An initial dielectric layer is formed to overlie a semiconductor substrate. A magnetoresistive storage layer is formed over the initial dielectric layer. An electrically conductive stop layer that is selective to etch processes and is mechanically hard is deposited over the magnetoresistive storage layer. A hardmask layer is formed to overlie the stop layer. The hardmask layer is etched to expose the stop layer. The stop layer and the magnetoresistive storage layer are etched using ion milling until the initial dielectric layer is exposed, defining individual magnetoresistive memory bits. An isolation layer is formed over the hardmask layer and in the etch regions between magnetoresistive bits. The isolation layer is planarized using chemical mechanical polish (CMP) until the stop layer is exposed.

Abstract: A process of forming electrical interconnects between memory bits in a magnetoresistive memory device. A dielectric layer is formed to overlie a semiconductor substrate. A magnetoresistive storage layer is formed over the dielectric layer. An electrically conductive stop layer that is selective to etch processes and is mechanically hard is deposited over the magnetoresistive layer. A hardmask layer is formed to overlie the stop layer. The hardmask layer is etched to expose the stop layer. The stop layer and the magnetoresistive layer are etched using ion milling until the initial dielectric layer is exposed, defining individual magnetoresistive memory bits. A dielectric layer is formed over the hardmask layer and in the etch regions between magnetoresistive bits. The dielectric layer is planarized using chemical mechanical polish (CMP) until the stop layer is exposed.