Patents by Inventor Hans Peter Sendlinger

Hans Peter Sendlinger has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and device for producing high purity polycrystalline silicon with a reduced dopant content
    Patent number: 7927571
    Abstract: In the batch production of high purity polycrystalline silicon, in which a U-shaped silicon carrier body is fastened in an open deposition reactor, the deposition reactor is hermetically sealed, the U-shaped carrier body is heated electrical current, a silicon-containing reaction gas and hydrogen are introduced into the reactor through a supply line so that silicon from the reaction gas is deposited on the carrier body, the diameter of the carrier body increases and a waste gas formed is removed from the deposition reactor through a discharge line, and, after a desired diameter of the polysilicon rod is reached, deposition is terminated, the carrier body is cooled to room temperature, the reactor is opened, the carrier body is removed from the reactor and a second U-shaped silicon carrier body made of silicon is fastened in the deposition reactor, an inert gas is fed through the supply and discharge lines into the open reactor from at least the time when the reactor is opened to extract the first carrier body
    Type: Grant
    Filed: August 6, 2007
    Date of Patent: April 19, 2011
    Assignee: Wacker Chemie AG
    Inventors: Thomas Altmann, Hans Peter Sendlinger, Ivo Croessmann
  • Method And Device For Producing High Purity Polycrystalline Silicon With A Reduced Dopant Content
    Publication number: 20080038178
    Abstract: In the batch production of high purity polycrystalline silicon, in which a U-shaped silicon carrier body is fastened in an open deposition reactor, the deposition reactor is hermetically sealed, the U-shaped carrier body is heated electrical current, a silicon-containing reaction gas and hydrogen are introduced into the reactor through a supply line so that silicon from the reaction gas is deposited on the carrier body, the diameter of the carrier body increases and a waste gas formed is removed from the deposition reactor through a discharge line, and, after a desired diameter of the polysilicon rod is reached, deposition is terminated, the carrier body is cooled to room temperature, the reactor is opened, the carrier body is removed from the reactor and a second U-shaped silicon carrier body made of silicon is fastened in the deposition reactor, an inert gas is fed through the supply and discharge lines into the open reactor from at least the time when the reactor is opened to extract the first carrier body
    Type: Application
    Filed: August 6, 2007
    Publication date: February 14, 2008
    Applicant: WACKER CHEMIE AG
    Inventors: Thomas Altmann, Hans-Peter Sendlinger, Ivo Crossmann