Abstract: In a method for transmitting a data element from a sensor module that produces sensor data to an application unit, the data element is stored in a ring buffer in the sensor module, and a corresponding item of event information is produced in an evaluation circuit from the sensor data, the data element including the sensor data and the item of event information, the data element being transmitted from the ring buffer to the application unit upon request by the application unit.

Abstract: In a method for transmitting a data element from a sensor module that produces sensor data to an application unit, the data element is stored in a ring buffer in the sensor module, and a corresponding item of event information is produced in an evaluation circuit from the sensor data, the data element including the sensor data and the item of event information, the data element being transmitted from the ring buffer to the application unit upon request by the application unit.

Abstract: A method and a casting mold for producing an optical semiconductor module is provided, wherein a semiconductor body having at least one optically active element on its top is introduced into a leadframe. Then conductive connections are established between the semiconductor body and the leadframe, and then the leadframe and semiconductor body are encapsulated in a casting mold. Wherein provided in the part of the casting mold that faces the top of the semiconductor body are masking bodies, which extend from the top inner wall of the casting mold towards the optically active elements and cover the elements with their respective end face in a way that seals out casting material.

Abstract: A semiconductor component, lighting unit for matrix screens, and method for manufacturing a semiconductor component is provided. The semiconductor component includes an integrated circuit, which has at least one light detector provided with a silicon-containing coating, particularly a coating of silicon nitride or silicon dioxide. A layer thickness of the silicon-containing coating, particularly the coating of silicon nitride or silicon dioxide, is selected in such a way that a predefinable, narrow-band, wavelength-selective transmission of light waves, particularly of light waves in a wavelength range from 300 nm to 850 nm, can be achieved.

Abstract: An oscillator includes a resonant circuit of at least one inductance device and at least one tunable capacitance. The tunable capacitance is implemented through diffusion capacitances of at least one current-carrying transistor. The tunable capacitance has a first differential amplifier having a first transistor and a second transistor and a second differential amplifier having a third transistor and a fourth transistor Electrical properties of the first transistor and second transistor are complementary to electrical properties of the third transistor and fourth transistor, and control connections of the first transistor and the third transistor are connected to one another. Control connections of the second transistor and the fourth transistor are connected to one another. Second current connections of the first transistor and the third transistor are connected to one another, and second current connections of the second transistor and the fourth transistor are connected to one another.

Abstract: A d.c. signal controlled oscillator includes a frequency-determining network having a control input and a modulation input. A phase regulating loop includes the oscillator and components that provide a control signal to the control input. A circuit apparatus for driving the oscillator includes a modulation generator that provides a modulation signal to the modulation input, and a circuit arrangement that autonomously generates a signal depending on and representing a slope of the modulation and provides this slope signal to the modulation generator, which generates the modulation signal dependent on the slope signal.

Abstract: A method and a casting mold for producing an optical semiconductor module is provided, wherein a semiconductor body having at least one optically active element on its top is introduced into a leadframe. Then conductive connections are established between the semiconductor body and the leadframe, and then the leadframe and semiconductor body are encapsulated in a casting mold. Wherein provided in the part of the casting mold that faces the top of the semiconductor body are masking bodies, which extend from the top inner wall of the casting mold towards the optically active elements and cover the elements with their respective end face in a way that seals out casting material.

Abstract: An oscillator includes a resonant circuit of at least one inductance device and at least one tunable capacitance. The tunable capacitance is implemented through diffusion capacitances of at least one current-carrying transistor. The tunable capacitance has a first differential amplifier having a first transistor and a second transistor and a second differential amplifier having a third transistor and a fourth transistor Electrical properties of the first transistor and second transistor are complementary to electrical properties of the third transistor and fourth transistor, and control connections of the first transistor and the third transistor are connected to one another. Control connections of the second transistor and the fourth transistor are connected to one another. Second current connections of the first transistor and the third transistor are connected to one another, and second current connections of the second transistor and the fourth transistor are connected to one another.

Abstract: A d.c. signal controlled oscillator includes a frequency-determining network having a control input and a modulation input. A phase regulating loop includes the oscillator and components that provide a control signal to the control input. A circuit apparatus for driving the oscillator includes a modulation generator that provides a modulation signal to the modulation input, and a circuit arrangement that autonomously generates a signal depending on and representing a slope of the modulation and provides this slope signal to the modulation generator, which generates the modulation signal dependent on the slope signal.

Abstract: In a known bitable flip-flop, a first inverter stage (1) is driven by an input signal (D), a second inverter stage (2) by a clock signal (CLK), and a third inverter stage (3) by an output signal (INV2) of the second inverter stage (2). In order to buffer the output signal levels of the inverter stages, the first and third inverter stages (1, 3) can be switched into a disabling state by the clock signal (CLK) and the second inverter stage (2) by an output signal (INV1) of the first inverter stage (1). The new bistable flip-flop is to be set independently of the input signal. For setting the flip-flop, preferably of CMOS design, field-effect transistors (M10, M11) are provided in the third and second inverter stages (3, 2) which inhibit disabling of the third inverter stage (3) by a set signal (SET) and a signal (SETN) that is complementary to it and which allow disabling of the second inverter stage (2) independently of the output signal (INV1) of the first inverter stage (1).