Abstract: Individual solar cells are disposed in a stacked-cell solar module alternately as p-i-n, n-i-p, p-i-n and so on, the solar-cell stack is patterned in strip-like fashion and the interconnection is carried out by means of comb-like electrode structures which connect the p-type sides of the solar cells of a stack to the n-type sides of the solar cells of the adjacent stack. The solar module, which can be produced in integrated form is connected in parallel within a stack and in series between the stacks. By simply repeating the manufacturing steps, stacks can be built in this way from two or more solar cells, which have a reduced light aging compared with known solar modules.

Abstract: A semiconductor device is disclosed in which an intrinsic or weakly doped semiconductor layer is arranged on a substrate. The semiconductor layer contains a first P doped zone and a first N doped zone which are separated by a portion of the said intrinsic layer serving as base zone. The semiconductor layer further contains a second P doped zone and a second N doped zone which are also separated from one another by the base zone. The four doped zones are arranged such that a connecting line between the second P doped zone and second N doped zone intersects a connecting line between the first P doped zone and the first N doped zone preferably at right angles. A sub-diode formed of the first doped zones affects the operation of a sub-diode formed by the second doped zones.

Abstract: A magnetic field sensitive diode including a silicon body, an n-injecting contact electrode and a p-injecting contact electrode located at spaced portions of the body, the body having opposed parallel surfaces having different recombination rates with respect to pairs of free charge carriers, the surface having the lower recombination rate consisting of silicon dioxide, the n-injecting contact electrode consisting of diffused in lithium, with substantially all of the acceptors in the silicon body being compensated by incorporated lithium ions, the silicon dioxide surfaces being essentially free of lithium. The invention also relates to a method of producing the improved structure.