Abstract: A semiconductor device includes storage cells which have a non-volatile storage transistor and an access transistor connected in series therewith, whereby parts of a word (bytes) can be selected for writing and erasing. By means of a second access transistor, which is added to each storage cell, and by means of switches which are controlled by lines used for driving these second access transistors, the current dissipation is reduced and in non-selected storage cells the potential of the insulated control electrodes of the storage transistors is fixed, as a result of which the risk of undesired change of the information content is reduced.

Abstract: A non-volatile memory cell of the MNOS type, in which the sidewalk effect is avoided or at least considerably reduced by limiting the extension of the boundary layer, in which charge is stored, to a region which is smaller than the thin gate dielectric covered by the gate electrode. The gate electrode extends from the active region over a thin insulator, in which no charge storage takes place, to above the thicker field insulation.