Abstract: A circuit carrier includes a substrate, a capacitive electrode layer, a plurality of metal pads and a plurality of bridges, and a plurality of conductive pillars. The capacitive electrode layer formed on a surface of the substrate and includes a plurality of first electrodes and a plurality of second electrodes. At least two of the first electrodes are connected to each other and be arranged across a die-bonding region of the substrate for separating at least two of the second electrodes that partially protrude from the die-bonding region to respectively form extensions. The metal pads and the bridges are formed on another surface of the substrate and are located outside of the die-bonding region. Each of the bridges connects two of the metal pads, and each of the conductive pillars is embedded in the substrate and connects one of the extensions and a corresponding one of metal pads.

Abstract: A method for multi-link operation (MLO) is provided. The method for MLO may be applied to an apparatus. The method for MLO may include the following steps. A multi-chip controller of the apparatus may assign different data to a plurality of chips of the apparatus, wherein each chip corresponds to one link of multi-links. Each chip may determine whether transmission of the assigned data has failed. A first chip of the chips may transmit the assigned data to an access point (AP) in response to the first chip determining that the transmission of the assigned data has not failed.

Abstract: A method performed by a UE connected to a first cell associated with a first satellite is provided. The method receives a measurement configuration includes a first SMTC and a second SMTC. The first and second SMTCs have at least a first parameter that is common to both first and second SMTCs and a second parameter that is different in each SMTC. The method receives a signal to perform a measurement procedure for a second cell associated with a second satellite. The method performs the measurement procedure based on the received measurement configuration, where the first parameter includes a duration of time that indicates an SMTC window within which at least one of an SSB or a CSI-RS is detectable by the UE to perform the measurement procedure, and the second parameter includes an offset value.

Abstract: An optical element driving mechanism is provided and includes a fixed assembly, a movable assembly, a driving assembly and a stopping assembly. The fixed assembly has a main axis. The movable assembly is configured to connect an optical element, and the movable assembly is movable relative to the fixed assembly. The driving assembly is configured to drive the movable assembly to move relative to the fixed assembly. The stopping assembly is configured to limit the movement of the movable assembly relative to the fixed assembly within a range of motion.

Abstract: The present disclosure, in some embodiments, relates to a method of forming a capacitor structure. The method includes forming a capacitor dielectric layer over a lower electrode layer, and forming an upper electrode layer over the capacitor dielectric layer. The upper electrode layer is etched to define an upper electrode and to expose a part of the capacitor dielectric layer. A spacer structure is formed over horizontally extending surfaces of the upper electrode layer and the capacitor dielectric layer and also along sidewalls of the upper electrode. The spacer structure is etched to remove the spacer structure from over the horizontally extending surfaces of the upper electrode layer and the capacitor dielectric layer and to define a spacer. The capacitor dielectric layer and the lower electrode layer are etched according to the spacer to define a capacitor dielectric and a lower electrode.

Abstract: The present disclosure relates to an integrated chip including a dielectric structure over a substrate. A first capacitor is disposed between sidewalls of the dielectric structure. The first capacitor includes a first electrode between the sidewalls of the dielectric structure and a second electrode between the sidewalls and over the first electrode. A second capacitor is disposed between the sidewalls. The second capacitor includes the second electrode and a third electrode between the sidewalls and over the second electrode. A third capacitor is disposed between the sidewalls. The third capacitor includes the third electrode and a fourth electrode between the sidewalls and over the third electrode. The first capacitor, the second capacitor, and the third capacitor are coupled in parallel by a first contact on a first side of the first capacitor and a second contact on a second side of the first capacitor.

Abstract: The present disclosure provides an electronic module including a circuit including a transmitting part and a receiving part physically separated from the transmitting part. The electronic module also includes an element isolated from the circuit and configured to block electrical interference between the transmitting part and the receiving part.

Abstract: Provided are a package structure and a method of forming the same. The method includes: forming an interconnect structure on a substrate; performing a laser grooving process to form a first opening in the interconnect structure and form a debris layer on a sidewall of the first opening in a same step; forming a protective layer to fill in the first opening and cover the debris layer and the interconnect structure; patterning the protective layer to form a second opening, wherein the second opening is spaced from the debris layer by the protective layer; performing a planarization process on the protective layer to expose a topmost contact pad of the interconnect structure; and performing a mechanical dicing process through the second opening to form a third opening in the substrate and cut the substrate into a plurality of semiconductor dies.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first source/drain structure and a second source/drain structure over and in a substrate. The method includes forming a first gate stack, a second gate stack, a third gate stack, and a fourth gate stack over the substrate. Each of the first gate stack or the second gate stack is wider than each of the third gate stack or the fourth gate stack. The method includes forming a first contact structure and a second contact structure over the first source/drain structure and the second source/drain structure respectively. A first average width of the first contact structure is substantially equal to a second average width of the second contact structure.

Abstract: A method for mobility enhancement in wireless communication systems is provided. The method is performed by a User Equipment (UE) configured with a first Small Data Transmission (SDT) configuration by a first cell. The method includes receiving a Radio Resource Control (RRC) release message including a suspend configuration from the first cell; transitioning to an RRC INACTIVE state in response to receiving the RRC release message; receiving, in the RRC INACTIVE state, a System Information Block Type 1 (SIB1) including a second SDT configuration from a second cell; camping on the second cell in response to receiving the SIB1 from the second cell; and while the UE is camping on the second cell, refraining from using the first SDT configuration to initiate an SDT procedure associated with the second cell in a case that the UE does not support performing the SDT procedure associated with the second cell.

Abstract: A semiconductor device includes a plurality of channel layers vertically separated from one another. The semiconductor device also includes an active gate structure comprising a lower portion and an upper portion. The lower portion wraps around each of the plurality of channel layers. The semiconductor device further includes a gate spacer extending along a sidewall of the upper portion of the active gate structure. The gate spacer has a bottom surface. Moreover, a dummy gate dielectric layer is disposed between the gate spacer and a topmost channel layer of plurality of channel layers. The dummy gate dielectric layer is in contact with a top surface of the topmost channel layer, the bottom surface of the gate spacer, and the sidewall of the gate structure.

Abstract: A method includes, in a first etching step, etching a semiconductor substrate to form first recesses in a first device region and second recesses in a second device regions simultaneously. A first semiconductor strip is formed between the first recesses. A second semiconductor strip is formed between the second recesses. In a second etching step, the semiconductor substrate in the second device region is etched to extend the second recesses. The first recesses and the second recesses are filled with a dielectric material to form first and second isolation regions in the first and second recesses, respectively. The first isolation regions and the second isolation regions are recessed. Portions of the semiconductor substrate in the first and the second device regions protrude higher than top surfaces of the respective first and second isolation regions to form a first and a second semiconductor fin, respectively.

Abstract: Described herein is an electronic component that may include a substrate, wherein the substrate may include at least two electrodes, wherein the at least two electrodes are each spaced apart from each other on and/or within the substrate. When the electronic component is in a first operating state, an electrolytic material may be disposed at least in a spatial region between the at least two electrodes, wherein the electrolytic material comprises at least one polymerizable material. When the electronic device is in a second operating state, at least one electrical connection may be made between the at least two electrodes, wherein the at least one electrical connection comprises an electrically conductive polymer. The electrically conductive polymer may comprise one or more fiber structures, wherein the one or more fiber structures are in physical contact with the at least two electrodes.

Abstract: A rotation device includes a base seat, an axle unit and a lock unit. The axle unit extends into the base seat. The lock unit includes a lock plate that is sleeved on the axle unit, and a lock member that is disposed on the base seat. The lock plate is formed with a first lock groove. The lock member has a lock portion that is operable to move into the first lock groove. The lock plate is locked by the lock portion of the lock member when the lock portion moves into the first lock groove, so that the axle unit and the lock plate are not rotatable relative to the base seat.

Abstract: A rotation device includes a base seat, an axle unit, a lower rotating module and an upper rotating module. The axle unit includes an upper axle and a lower axle. The lower rotating module includes a lock unit, and an outer barrel that is disposed in the base seat and that is penetrated by the lower axle. The lock unit includes a lock plate that is sleeved on the lower axle, and a lock member that is mounted to the base seat. The lock plate is formed with a first lock groove. The lock member has a lock portion that is operable to move into the first lock groove. The upper rotating module is disposed in the base seat and is co-rotatably sleeved on the upper axle. The upper rotating module is able to be driven by the upper axle to rotate relative to the lower rotating module.

Abstract: A rotation device includes a base seat, an axle unit and a restoring unit. The axle unit includes an upper axle that extends into the base seat. The restoring unit permits the upper axle to extend therein. The restoring unit is for restoring the upper axle to its original position after the upper axle is rotated.

Abstract: The present disclosure relates to an integrated chip including a dielectric structure over a substrate. A first capacitor is disposed between sidewalls of the dielectric structure. The first capacitor includes a first electrode between the sidewalls of the dielectric structure and a second electrode between the sidewalls and over the first electrode. A second capacitor is disposed between the sidewalls. The second capacitor includes the second electrode and a third electrode between the sidewalls and over the second electrode. A third capacitor is disposed between the sidewalls. The third capacitor includes the third electrode and a fourth electrode between the sidewalls and over the third electrode. The first capacitor, the second capacitor, and the third capacitor are coupled in parallel by a first contact on a first side of the first capacitor and a second contact on a second side of the first capacitor.

Abstract: A color correction method is applied to an image correction apparatus having an image sensor, and includes searching a color deviation area within a detection image, analyzing the detection image to estimate a correction color value of the color deviation area, and calibrating the color deviation area by the correction color value to generate a calibrated detection image without color deviation.

Abstract: The present disclosure, in some embodiments, relates to a method of forming a capacitor structure. The method includes forming a capacitor dielectric layer over a lower electrode layer, and forming an upper electrode layer over the capacitor dielectric layer. The upper electrode layer is etched to define an upper electrode and to expose a part of the capacitor dielectric layer. A spacer structure is formed over horizontally extending surfaces of the upper electrode layer and the capacitor dielectric layer and also along sidewalls of the upper electrode. The spacer structure is etched to remove the spacer structure from over the horizontally extending surfaces of the upper electrode layer and the capacitor dielectric layer and to define a spacer. The capacitor dielectric layer and the lower electrode layer are etched according to the spacer to define a capacitor dielectric and a lower electrode.

Abstract: A display apparatus and an image displaying method are provided. The display apparatus includes a display module and a driving circuit. The driving circuit is coupled to the display module and receives an input image. The driving circuit determines a watermark area and a non-watermark area of the display module according to watermark information, and at least one of the watermark area and the non-watermark area is alternately driven by a first gamma curve and a second gamma curve. A brightness difference percentage between the first gamma curve and the second gamma curve at a same grayscale value between 10% and 90% of a grayscale percentage is between 0.2 and 0.6.