Abstract: A semiconductor laser diode comprises a semiconductor body having an n-region and a p-region laterally spaced apart within the semiconductor body. The laser diode is provided with an active region between the n-region and the p-region having a front end and a back end section, an n-metallization layer located adjacent the n-region and having a first injector for injecting current into the active region, and a p-metallization layer opposite to the n-metallization layer and adjacent the p-region and having a second injector for injecting current into the active region. The thickness and/or width of at least one metallization layer is chosen so as to control the current injection in a part of the active region near at least one end of the active region compared to the current injection in another part of the active region. The width of the at least one metallization layer is larger than a width of the active region.

Abstract: A laser device having a semiconductor gain element optically coupled to an optical fiber by using an angled anamorphic fiber lens and including a wavelength-selective front reflector. The laser device possesses improved output characteristics such as a highly linear laser emission output, even when the amplification section produces a high amount of gain. Such a laser source can also be used in various applications such as pump lasers for fiber amplifiers or frequency doubling systems.

Abstract: A semiconductor laser diode comprises a semiconductor body having an n-region and a p-region laterally spaced apart within the semiconductor body. The laser diode is provided with an active region between the n-region and the p-region having a front end and a back end section, an n-metallisation layer located adjacent the n-region and having a first injector for injecting current into the active region, and a p-metallisation layer opposite to the n-metallisation layer and adjacent the p-region and having a second injector for injecting current into the active region. The thickness and/or width of at least one metallisation layer is chosen so as to control the current injection in a part of the active region near at least one end of the active region compared to the current injection in another part of the active region. The width of the at least one metallisation layer is larger than a width of the active region.

Abstract: A laser device having a semiconductor gain element optically coupled to an optical fiber by using an angled anamorphic fiber lens and including a wavelength-selective front reflector. The laser device possesses improved output characteristics such as a highly linear laser emission output, even when the amplification section produces a high amount of gain. Such a laser source can also be used in various applications such as pump lasers for fiber amplifiers or frequency doubling systems.