Abstract: Monolithic pixel detectors, systems and methods for the detection and imaging of electromagnetic radiation with high spectral and spatial resolution comprise a Si wafer with a CMOS processed pixel readout bonded to an absorber wafer in wafer bonds comprising conducting bonds between doped, highly conducting charge collectors in the readout and highly conducting regions in the absorber wafer and poorly conducting bonds between regions of high resistivity.

Abstract: Production system for wafer bonding comprising modules for wet chemical wafer cleaning and surface passivation and vacuum modules with base pressure in the ultrahigh vacuum regime for the removal of surface passivation, wafer flipping and alignment, low temperature annealing and wafer bonding, with all modules integrated in the same tool and individually serviceable. Methods for oxide-free covalent semiconductor wafer bonding include wet chemistry and vacuum processing at low temperatures compatible with CMOS processed wafers.

Abstract: Monolithic CMOS integrated pixel detector (10, 20, 30, 260, 470, 570), and systems and methods are provided for the detection and imaging of electromagnetic radiation with high spectral and spatial resolution. Such detectors comprise a Si wafer with a CMOS processed readout bonded to an absorber wafer in an electrically conducting covalent wafer bond. The pixel detectors, systems and methods are used in various medical and non-medical types of applications.

Abstract: Oxide-free, low temperature wafer bonding permits electric current to cross the covalently bonded interface unimpeded by traps, recombination centers and unintentional, defect-induced blocking barriers when interfacial defects are passivated by hydrogen diffused from shallow implants towards the interface. Systems and methods comprising oxide-free, low temperature covalent wafer bonding with passivated interface states are used in various applications requiring reduced interfacial scattering and carrier trapping and efficient charge collection across bonded interfaces.

Abstract: CBCT including monolithic photon counting FPD for medical applications requiring real-time 3D imaging, like mammography, interventional guided procedures or external beam radiotherapy, includes CMOS processed readout electronics monolithically integrated with a single crystalline X-ray absorber by covalent wafer bonding near room temperature and adapted for single photon counting providing high energy, temporal and spatial resolution.

Abstract: CBCT including monolithic photon counting FPD for medical applications requiring real-time 3D imaging, like mammography, interventional guided procedures or external beam radiotherapy, includes CMOS processed readout electronics monolithically integrated with a single crystalline X-ray absorber by covalent wafer bonding near room temperature and adapted for single photon counting providing high energy, temporal and spatial resolution.

Abstract: Monolithic silicon pixel detectors, systems and methods for the detection and imaging of radiation in the form of charged particles or X-ray photons comprise a Si wafer with a CMOS processed readout communicating via implants for charge collection with an absorber forming a monolithic unit with the Si wafer to collect and process the electrical signals generated by radiation incident on the absorber. In particular, a monolithic CMOS integrated pixel detector includes several components. Such components include a p-doped silicon wafer with a resistivity of at least 1 k?cm (220, 310, 310?) having a front-side (224, 314, 314) comprising a CMOS processed readout electronics (250, 350) comprising pixel electronics (258, 358) and a backside (228, 318) opposite the front side. In addition, the pixel detector includes charge collectors (252, 352) communicating with the pixel electronics (258, 358) and defining the pixel size. Still further, high voltage contacts (282, 382) are provided.

Abstract: Monolithic pixel detectors, systems and methods for the detection and imaging of electromagnetic radiation with high spectral and spatial resolution comprise a Si wafer with a CMOS processed pixel readout bonded to an absorber wafer in wafer bonds comprising conducting bonds between doped, highly conducting charge collectors in the readout and highly conducting regions in the absorber wafer and poorly conducting bonds between regions of high resistivity.

Abstract: Monolithic pixel detectors, systems and methods for the detection and imaging of electromagnetic radiation with high spectral and spatial resolution comprise a Si wafer with a CMOS processed pixel readout bonded to an absorber wafer in wafer bonds comprising conducting bonds between doped, highly conducting charge collectors in the readout and highly conducting regions in the absorber wafer and poorly conducting bonds between regions of high resistivity.

Abstract: Monolithic silicon pixel detectors, systems and methods for the detection and imaging of radiation in the form of charged particles or X-ray photons comprise a Si wafer with a CMOS processed readout communicating via implants for charge collection with an absorber forming a monolithic unit with the Si wafer to collect and process the electrical signals generated by radiation incident on the absorber. In particular, a monolithic CMOS integrated pixel detector includes several components. Such components include a p-doped silicon wafer with a resistivity of at least 1 k?cm (220, 310, 310?) having a front-side (224, 314, 314) comprising a CMOS processed readout electronics (250, 350) comprising pixel electronics (258, 358) and a backside (228, 318) opposite the front side. In addition, the pixel detector includes charge collectors (252, 352) communicating with the pixel electronics (258, 358) and defining the pixel size. Still further, high voltage contacts (282, 382) are provided.

Abstract: Monolithic CMOS integrated pixel detector (10, 20, 30, 260, 470, 570), and systems and methods are provided for the detection and imaging of electromagnetic radiation with high spectral and spatial resolution. Such detectors comprise a Si wafer with a CMOS processed readout bonded to an absorber wafer in an electrically conducting covalent wafer bond. The pixel detectors, systems and methods are used in various medical and non-medical types of applications.

Abstract: Oxide-free, low temperature wafer bonding permits electric current to cross the covalently bonded interface unimpeded by traps, recombination centers and unintentional, defect-induced blocking barriers when interfacial defects are passivated by hydrogen diffused from shallow implants towards the interface.

Abstract: Monolithic pixel detectors, systems and methods for the detection and imaging of radiation in the form of energetic particles which may have a mass or be massless (such as X-ray photons) comprise a Si wafer with a CMOS processed readout communicating via implants for charge collection with an absorber forming a monolithic unit with the Si wafer to collect and process the electrical signals generated by radiation incident on the absorber. The pixel detectors, systems and methods are used in various medical, industrial and scientific types of applications.

Abstract: CBCT including monolithic photon counting FPD for medical applications requiring real-time 3D imaging, like mammography, interventional guided procedures or external beam radiotherapy, includes CMOS processed readout electronics monolithically integrated with a single crystalline X-ray absorber by covalent wafer bonding near room temperature and adapted for single photon counting providing high energy, temporal and spatial resolution.

Abstract: Monolithic pixel detectors, systems and methods for the detection and imaging of radiation in the form of energetic particles which may have a mass or be massless (such as X-ray photons) comprise a Si wafer with a CMOS processed readout communicating via implants for charge collection with an absorber forming a monolithic unit with the Si wafer to collect and process the electrical signals generated by radiation incident on the absorber. The pixel detectors, systems and methods are used in various medical, industrial and scientific types of applications.

Abstract: CBCT including monolithic photon counting FPD for medical applications requiring real-time 3D imaging, like mammography, interventional guided procedures or external beam radiotherapy, includes CMOS processed readout electronics monolithically integrated with a single crystalline X-ray absorber by covalent wafer bonding near room temperature and adapted for single photon counting providing high energy, temporal and spatial resolution.

Abstract: A process for epitaxial deposition of compound semiconductor layers includes several steps. In a first step, a substrate is removably attached to a substrate holder that may be heated. In a second step, the substrate is heated to a temperature suitable for epitaxial deposition. In a third step, substances are vaporized into vapor particles, such substances including at least one of a list of substances, comprising elemental metals, metal alloys and dopants. In a fourth step, the vapor particles are discharged to the deposition chamber. In a fifth step, a pressure is maintained in the range of 10^?3 to 1 mbar in the deposition chamber by supplying a mixture of gases comprising at least one gas, wherein vapor particles and gas particles propagate diffusively. In a sixth optional step, a magnetic field may be applied to the deposition chamber. In a seventh step, the vapor particles and gas particles are activated by a plasma in direct contact with the sample holder.

Abstract: Relaxed germanium buffer layers can be grown economically on misoriented silicon wafers by low-energy plasma-enhanced chemical vapor deposition. In conjunction with thermal annealing and/or patterning, the buffer layers can serve as high-quality virtual substrates for the growth of crack-free GaAs layers suitable for high-efficiency solar cells, lasers and field effect transistors.

Abstract: An apparatus and process for fast epitaxial deposition of compound semiconductor layers includes a low-energy, high-density plasma generating apparatus for plasma enhanced vapor phase epitaxy. The process provides in one step, combining one or more metal vapors with gases of non-metallic elements in a deposition chamber. Then highly activating the gases in the presence of a dense, low-energy plasma. Concurrently reacting the metal vapor with the highly activated gases and depositing the reaction product on a heated substrate in communication with a support immersed in the plasma, to form a semiconductor layer on the substrate. The process is carbon-free and especially suited for epitaxial growth of nitride semiconductors at growth rates up to 10 nm/s and substrate temperatures below 1000° C. on large-area silicon substrates. The process requires neither carbon-containing gases nor gases releasing hydrogen, and in the absence of toxic carrier or reagent gases, is environment friendly.

Abstract: A process for epitaxial deposition of compound semiconductor layers includes several steps. In a first step, a substrate is removably attached to a substrate holder that may be heated. In a second step, the substrate is heated to a temperature suitable for epitaxial deposition. In a third step, substances are vaporized into vapor particles, such substances including at least one of a list of substances, comprising elemental metals, metal alloys and dopants. In a fourth step, the vapor particles are discharged to the deposition chamber. In a fifth step, a pressure is maintained in the range of 10?-3 to 1 mbar in the deposition chamber by supplying a mixture of gases comprising at least one gas, wherein vapor particles and gas particles propagate diffusively. In a sixth optional step, a magnetic field may be applied to the deposition chamber. In a seventh step, the vapor particles and gas particles are activated by a plasma in direct contact with the sample holder.