Abstract: An improved radial type high voltage solid-state switch is essentially a gated diode switch (GDS) having two anode regions, two gate regions, a common cathode region, and a common shield region. The anodes, gates, cathode, and shield all have sides which are portions of concentric circles. The arc lengths and radii of the anode regions are less than the corresponding arc sides of the shield and cathode. This structure, which is a dual radial gated diode swtich (DRGDS), has lower on resistance than a conventional radial gated diode switch which has the same operating voltage range.

Abstract: A radial type of high voltage solid-state switch is essentially a gated diode switch (GDS) with portions of the anode, cathode, shield, and gate regions being arc portions of concentric circles which have different radii. The arc length and radius of the arc portions of the anode are less than the corresponding parameters of the shield and cathode. This structure, which is denoted as a radial gated diode switch, RGDS, has lower on resistance than a standard GDS of the same area and distance between anode and shield regions.

Abstract: A gate controlled semiconductor device comprises a cathode region having a current defocusing region associated therewith. The defocusing region is unmetallized but substantially completely surrounded by cathode metallization. The defocusing region comprises only a relatively small percentage of the total cathode region and conducts current during the on-state of the device. However, during turn-off of the device substantially all of the conducting plasma is forced to flow in the defocusing region.

Abstract: A vertical MOSFET device having source, body and drain regions, includes an anode region in series with the drain region. The source, body and drain regions have a first forward current gain and the anode, drain and body regions have a second forward current gain, such that the sum of the current gains is less than unity. The anode region provides minority carrier injection into the drain region, enhancing device performance in power applications.

Abstract: A gate controlled semiconductor controlled rectifier comprises an integral combination of a regenerative thyristor section and an adjacent non-regenerative section. The non-regenerative section includes rectifying contact means to reduce the lateral current needed to turn on the regenerative section.