Patents by Inventor Hans Wenzel

Hans Wenzel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor laser
    Patent number: 6961358
    Abstract: A semiconductor laser has an antiresonant waveguide (10), which is formed by a layer sequence applied to a substrate (1). The layer sequence has outer waveguide regions (2, 8), reflection layers (3, 7), and a waveguide core (11) with an active layer (5). With this structure, semiconductor lasers with only slight vertical beam divergence and with a large beam cross section can be produced.
    Type: Grant
    Filed: September 20, 2001
    Date of Patent: November 1, 2005
    Assignee: Osram Opto Semiconductors GmbH
    Inventors: Götz Erbert, Günther Tränkle, Hans Wenzel
  • Fabrication method for surface emitting semiconductor device and surface emitting semiconductor device
    Publication number: 20040144984
    Abstract: A method or fabricating a surface emitting semiconductor device like a GaAs-based vertical cavity surface emitting laser diode comprising basically a substrate, two stacks of Bragg mirrors surrounding a laser cavity containing the active region and a contact layer on top of the DBR facing the light extraction window 13 featuring a layer (2) made form gallium-indium-phosphide (GaInP) epitaxially deposited during the growth of the layer sequence.
    Type: Application
    Filed: January 29, 2003
    Publication date: July 29, 2004
    Applicant: Forschungsverbund Berling e.V.
    Inventors: Andrea Knigge, Martin Zorn, Markus Weyers, Hans Wenzel
  • Semiconductor laser
    Publication number: 20040047378
    Abstract: A semiconductor laser has an antiresonant waveguide (10), which is formed by a layer sequence applied to a substrate (1). The layer sequence has outer waveguide regions (2, 8), reflection layers (3, 7), and a waveguide core (11) with an active layer (5). With this structure, semiconductor lasers with only slight vertical beam divergence and with a large beam cross section can be produced.
    Type: Application
    Filed: March 20, 2003
    Publication date: March 11, 2004
    Inventors: G?ouml;tz Erbert, G?uuml;nther Trnkle, Hans Wenzel