Abstract: A bulk acoustic wave resonator comprising a substrate, a Bragg reflector, a top and a bottom electrode and a piezoelectric layer with means for suppression of the pass-band ripples in a bulk acoustic wave filter. The means for absorbing or scattering the spurious modes are a roughened rear side of the substrate, an absorbing layer disposed on the rear side of the substrate and/or an absorbing layer disposed on the front side of the substrate.

Abstract: The integrated capacitor structure comprises a first branch with a first capacitor (60) and a second branch with a second capacitor (70). The second capacitor (70) has a higher capacitance density and a lower breakdown voltage than the first capacitor (60). The first branch has a shorter RC time constant than the second branch, such that a voltage peak will substantially follow the first branch. This first capacitor (60) has a sufficient capacity to store the charge of the voltage peak. In one embodiment, the second capacitor (70) is a stacked capacitor. The structure is suitable for ESD-protection and may, to this end, additionally comprise diodes (21) and resistors (22).

Abstract: The integrated capacitor structure comprises a first branch with a first capacitor (60) and a second branch with a second capacitor (70). The second capacitor (70) has a higher capacitance density and a lower breakdown voltage than the first capacitor (60). The first branch has a shorter RC time constant than the second branch, such that a voltage peak will substantially follow the first branch. This first capacitor (60) has a sufficient capacity to store the charge of the voltage peak. In one embodiment, the second capacitor (70) is a stacked capacitor. The structure is suitable for ESD-protection and may, to this end, additionally comprise diodes (21) and resistors (22).

Abstract: A bulk acoustic wave resonator comprising a substrate (5), a Bragg reflector (4), a top (1) and a bottom (3) electrode and a piezoelectric layer (2) with means for suppression of the pass-band ripples in a bulk acoustic wave filter. The means for absorbing or scattering the spurious modes are a roughened rear side of the substrate (6), an absorbing layer (5) disposed on the rear side of the substrate (6) and/or an absorbing layer (5) disposed on the front side of the substrate.

Abstract: The invention relates to an electronic device provided with an electronic component which comprises an integrated circuit arrangement which has a semiconducting substrate, active components, and passive components such as capacitors with high and with low capacitance values and/or resistors. The invention further relates to a transmitter, a receiver, an electronic component, a peripheral circuit, a power supply circuit, a filter module, and an integrated circuit arrangement.

Abstract: The invention relates to an array of ultrasound transducers which each comprise a membrane that is comprised of diamond or diamond-like carbon, a barrier structure, a piezoelectric layer, a first electrode and a second electrode. The barrier structure ensures strong adhesion of the piezoelectric layer to the barrier structure and thus to the device and that the piezoelectric layer only comprises a single phase. In addition, the barrier structure protects the membrane against oxidation/decomposition during the manufacturing process of piezoelectric layer. The invention further relates to an ultrasound transducer.

Abstract: A perovskite-containing composite material comprising a substrate, an intermediate layer of a first titanium-containing perovskite and a covering layer of a second perovskite, both the first and the second perovskites being quaternary or higher-substituted perovskites. This composite material exhibits a single-phase perovskite covering layer and, consequently, can very suitably be used for the manufacture of electronic components and modules comprising integrated passive components. A description is given of a method of manufacturing said composite material.

Abstract: The invention relates to a multiple-component unit in which at least two passive components have been realized one above the other. A multiple-component unit thus comprises at least one resistor and at least one capacitor, or at least two capacitors. This space-saving construction allows for a miniaturization of circuits. A further miniaturization can be achieved in that the multiple-component units are not manufactured as discrete components, but are integrated into ICs.

Abstract: The invention relates to an electronic device provided with an electronic component which comprises an integrated circuit arrangement which has a semiconducting substrate, active components, and passive components such as capacitors with high and with low capacitance values and/or resistors. The invention further relates to a transmitter, a receiver, an electronic component, a peripheral circuit, a power supply circuit, a filter module, and an integrated circuit arrangement.

Abstract: The invention relates to a thin film circuit with component. The thin film circuit comprises a network of capacitors, or a network of capacitors and resistors, or a network of capacitors, resistors and inductances, or a network of capacitors and inductances. Current supply contacts such as, for example, SMD end contacts or bump end contacts render it possible for the thin film circuit to be connected to further components of a circuit or, for example, to be combined with active components through the use of contact surfaces.

Abstract: An electronic component has a substrate, electrode layers for the bottom electrode, top electrode and, optionally, one or more intermediate electrodes, and has intermediate functional layers, these electrode layers include an electroconductive oxidic compound, at least one electrode layer is composed of EuO.sub.x, wherein 1.ltoreq.x.ltoreq.2, LiTi.sub.2 O.sub.4, LiV.sub.2 O.sub.4, SrVO.sub.3, Eu.sub.x NbO.sub.3, Na.sub.x WO.sub.3, A.sub.2 P.sub.8 W.sub.32 O.sub.112, wherein A=K, Rb,RTl, Na.sub.x Ta.sub.y W.sub.1-y O.sub.3, Na.sub.1-x Sr.sub.x NbO.sub.3, LaTiO.sub.3 CeTiO.sub.3, CaVO.sub.3, La.sub.1-x Sr.sub.x VO.sub.3, SrCoO.sub.3, CaRuO.sub.3, SrRuO.sub.3, BaRuO.sub.3, BaPbO.sub.3, SrMoO.sub.3, Sr.sub.0.5 La.sub.0.5 O.sub.3, La.sub.4 BaCu.sub.5 O.sub.13-x, La.sub.2-x Sr.sub.x CuO.sub.4-.delta., YBa.sub.2 Cu.sub.3 O.sub.7-.delta., Bi.sub.2 Sr.sub.2 CaCu.sub.2 O.sub.8.sub.+d, Bi.sub.2 Sr.sub.2 CuO.sub.6+d, Bi.sub.2 Sr.sub.2 Ca.sub.2 Cu.sub.3 O.sub.10+d, Tl.sub.2 Ba.sub.2 CaCu.sub.2 O.sub.8, TlBa.sub.2 CuO.sub.

Abstract: A method of manufacturing monolayer capacitors having a ferroelectric layer on the basis of titanium as a dielectric on a substrate, the ferroelectric layer being located between a first and a second noble metal electrode, in which the ferroelectric layer is formed as a barium titanate layer having a layer thickness in the range of from 0.2 to 0.6 .mu.m in that a stable solution of salts of carbonic acids, alkoxides and/or acetyl acetonates is applied and is thermally decomposed at temperatures in the range of from 500.degree. to 700.degree. C., the solution constituting the ferroelectric layer being adjusted so that after the thermal decomposition process an excess quantity of titanium oxide of about 1 mol. % is obtained, and this coating process being repeated until the desired layer thickness is attained, after which the second noble metal electrode is provided on the ferroelectric layer.

Abstract: A method of manufacturing titanium dioxide powder by hydrolysis of a titanium alcoholate, in which the titanium alcoholate is made to react with a 10M acetic acid aqueous solution and an aqueous ethanol solution under an N.sub.2 atmosphere, the precipitate consisting of titanium dioxide is separated from the liquid phase after a reaction time of 24 hours, the precipitate is rinsed with deionized water and subsequently with an aqueous ammoniacal solution having a pH value of 9, and the phases are separated.

Abstract: A method of manufacturing ceramic powders having the perovskite structure by means of a reaction in an aqueous solution, in which a homogeneous aqueous solution comprising a strong organic base and comprising at least one alkaline-earth metal salt and at least one zirconium salt and/or at least one titanium salt is converted at a reaction temperature in the range from 70.degree. to 150.degree. C., and water adhering to the reaction product is removed, or in which an alkaline-earth metal-titanium-acetate gel having a strong organic base is converted at a reaction temperature in the range from 110.degree.-180.degree. C., and water adhering to the reaction product is removed.

Abstract: A method of manufacturing powdered barium titanate, in which titanium dioxide is made to react with barium hydroxide, excluding CO.sub.2 at a temperature in the range from 60.degree. to 95.degree. C., amorphous titanium dioxide having a water content of .apprxeq.0.5 mol. being made to react with excess barium hydroxide in water, and being dried after removing the excess barium ions.