Abstract: The present invention relates to a first container with an internal space for accommodating a vertical external cavity surface emitting laser device. Said first container hermetically seals said internal space from an external space, wherein said first container has at least one wall with at least one first through-opening. Said at least one first through-opening is adapted for passage of an optical pump beam from the external space into the internal space, and/or for passage of a laser emission beam from the internal space into the external space. Moreover, said at least one first through-opening is hermetically sealed by a sealing mirror, wherein said sealing mirror is adapted to form an external cavity of the vertical external cavity surface emitting laser device with a second mirror in the internal space. Furthermore, the present invention relates to laser device with such a first container and to an assembly method of the laser device.

Abstract: The present invention relates to an active gain layer stack (21) for a vertical emitting laser device, the active gain layer stack (21) comprising a semiconductor material, wherein the semiconductor material is structured such that it forms at least one mesa (24) extending in a vertical direction. A transversally neighboring region (25) that at least partly surrounds said mesa (24) has a second refractive index (n2)—At least part of said mesa (24) has a first refractive index (n1) and a part of the neighboring region (25) transversally adjacent to said part of the mesa (24) has second refractive index (n 2)—Said first refractive index (n1) is higher than said second refractive index (n2) and a diameter in transversal direction of said mesa (24) is chosen such that a transversal confinement factor in the active gain layer stack (21) is increased.

Abstract: The present invention relates to a first container with an internal space for accommodating a vertical external cavity surface emitting laser device. Said first container hermetically seals said internal space from an external space, wherein said first container has at least one wall with at least one first through-opening. Said at least one first through-opening is adapted for passage of an optical pump beam from the external space into the internal space, and/or for passage of a laser emission beam from the internal space into the external space. Moreover, said at least one first through-opening is hermetically sealed by a sealing mirror, wherein said sealing mirror is adapted to form an external cavity of the vertical external cavity surface emitting laser device with a second mirror in the internal space. Furthermore, the present invention relates to laser device with such a first container and to an assembly method of the laser device.

Abstract: The present invention relates to an active gain layer stack (21) for a vertical emitting laser device, the active gain layer stack (21) comprising a semiconductor material, wherein the semiconductor material is structured such that it forms at least one mesa (24) extending in a vertical direction. A transversally neighboring region (25) that at least partly surrounds said mesa (24) has a second refractive index (n2)—At least part of said mesa (24) has a first refractive index (n1) and a part of the neighboring region (25) transversally adjacent to said part of the mesa (24) has second refractive index (n 2)—Said first refractive index (n1) is higher than said second refractive index (n2) and a diameter in transversal direction of said mesa (24) is chosen such that a transversal confinement factor in the active gain layer stack (21) is increased.

Abstract: A VECSEL-type surface-emitting semiconductor laser device is manufactured by providing a first component part (10) comprising a layered first mirror (12), providing a second component part (20) comprising a layered active region (22), permanently joining the second component part to the first component part to form an integral unit, and arranging a second mirror (32) so as to form an optical cavity containing the active region. This method of manufacture enables production at lower cost and enables greater flexibility in the choice of materials for the mirrors and the active region well as for the substrates on which the first mirror and the active region are deposited, as compared to traditional monolithic epitaxy methods. Preferably, the laser device is a IV-VI-type VECSEL emitting in the mid-IR range of the electromagnetic spectrum.

Abstract: For fulling, the mineral fiber sheets (11) are moved in the direction of the arrow by means of two endless studded belts, only the lower one (15) of which is visible in the drawing. By means of the first fulling tool (29), pre-fulling to a depth of about 8 cm is effected. With the second fulling tool (30), fulling to a depth of about 11 cm is effected. During the fulling process, the region of the mineral fiber sheet (11) not belonging to the fulling zone is supported on the bottom and top, so that a change in the fibrous structure of the material takes place only in the peripheral region that subsequently forms a compressible zone (23). The fulling is done from the side, or in other words in the same direction as the later compression upon installation of the mineral fiber sheet between two rafters.

Abstract: On a semiconductor substrate (1), e.g. of Si, a IIa-metal-fluoride layer (2) and in that a narrow-gap semiconductor layer (3), e.g. of a lead-chalcogenide, is epitaxially grown. In the narrow-gap semiconductor layer (3) one or more infrared sensors (4) are integrated. In the semiconductor substrate (1) is integrated at least one part of an electronic circuit arrangement (5) for interpretation of the electric signals supplied by the sensors (4). The fluoride layer (2) exhibits at its interfaces lattice constants which lie between, or close to, the different lattice constants of the semiconductor substrate (1) and the narrow-gap semiconductor layer (3). For a better lattice match at the interfaces of the fluoride layer (2) to the semiconductor substrate (1) on the one hand and to the narrow-gap semiconductor layer (3) on the other, the fluoride layer consists appropriately of a mixed crystal Ca.sub.x Sr.sub.y Ba.sub.z Cd.sub.1-x-u-z F.sub.2 with 0.ltoreq.x, y, z.ltoreq.