Patents by Inventor Hansel LO
Hansel LO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11959169Abstract: A gas injector for processing a substrate includes a body having an inlet connectable to a gas source that is configured to provide a gas flow in a first direction into the inlet when processing a substrate on a substrate support disposed within a processing volume of a processing chamber, and an a gas injection channel formed in the body. The gas injection channel is in fluid communication with the inlet and configured to deliver the gas flow to an inlet of the processing chamber. The gas injection channel has a first interior surface and a second interior surface that are parallel to a second direction and a third direction. The second and third directions are misaligned with a center of the substrate, and are at an angle to the first direction towards a first edge of the substrate support.Type: GrantFiled: September 30, 2022Date of Patent: April 16, 2024Assignee: APPLIED MATERIALS, INC.Inventors: Eric Kihara Shono, Vishwas Kumar Pandey, Christopher S. Olsen, Kartik Shah, Hansel Lo, Tobin Kaufman-Osborn, Rene George, Lara Hawrylchak, Erika Hansen
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Publication number: 20240112903Abstract: Described herein is a method for selectively oxidizing a substrate. The method includes forming a non-conformal layer on at least one side surface of a trench or a hole of a substrate. After forming the non-conformal layer, the at least one trench or at least one hole may be selectively oxidized, wherein oxidation of the non-conformal layer and an exposed portion of the at least one side wall not covered by the non-conformal layer occurs to form an oxide layer. The oxide layer is thicker at a lower portion of the at least one side wall than the upper portion of the at least one side wall, such that it tapers.Type: ApplicationFiled: September 29, 2022Publication date: April 4, 2024Inventors: Hansel Lo, Chris Olsen
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Publication number: 20230407471Abstract: The present disclosure generally provides methods of providing at least metastable radical molecular species and/or radical atomic species to a processing volume of a process chamber during an electronic device fabrication process, and apparatus related thereto. In one embodiment, the apparatus is a gas injection assembly disposed between a remote plasma source and a process chamber. The gas injection assembly includes a body, a dielectric liner disposed in the body that defines a gas mixing volume, a first flange to couple the gas injection assembly to a process chamber, and a second flange to couple the gas injection assembly to the remote plasma source. The gas injection assembly further includes one or more gas injection ports formed through the body and the liner.Type: ApplicationFiled: June 2, 2023Publication date: December 21, 2023Inventors: Vishwas Kumar PANDEY, Eric Kihara SHONO, Kartik SHAH, Christopher S. OLSEN, Agus Sofian TJANDRA, Tobin KAUFMAN-OSBORN, Taewan KIM, Hansel LO
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Patent number: 11732355Abstract: The present disclosure generally provides methods of providing at least metastable radical molecular species and/or radical atomic species to a processing volume of a process chamber during an electronic device fabrication process, and apparatus related thereto. In one embodiment, the apparatus is a gas injection assembly disposed between a remote plasma source and a process chamber. The gas injection assembly includes a body, a dielectric liner disposed in the body that defines a gas mixing volume, a first flange to couple the gas injection assembly to a process chamber, and a second flange to couple the gas injection assembly to the remote plasma source. The gas injection assembly further includes one or more gas injection ports formed through the body and the liner.Type: GrantFiled: October 24, 2019Date of Patent: August 22, 2023Assignee: Applied Materials, Inc.Inventors: Vishwas Kumar Pandey, Eric Kihara Shono, Kartik Shah, Christopher S. Olsen, Agus Sofian Tjandra, Tobin Kaufman-Osborn, Taewan Kim, Hansel Lo
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Patent number: 11697875Abstract: The present disclosure generally provides methods of providing at least metastable radical molecular species and/or radical atomic species to a processing volume of a process chamber during an electronic device fabrication process, and apparatus related thereto. In one embodiment, the apparatus is a gas injection assembly disposed between a remote plasma source and a process chamber. The gas injection assembly includes a body, a dielectric liner disposed in the body that defines a gas mixing volume, a first flange to couple the gas injection assembly to a process chamber, and a second flange to couple the gas injection assembly to the remote plasma source. The gas injection assembly further includes one or more gas injection ports formed through the body and the liner.Type: GrantFiled: October 24, 2019Date of Patent: July 11, 2023Assignee: Applied Materials, Inc.Inventors: Vishwas Kumar Pandey, Eric Kihara Shono, Kartik Shah, Christopher S. Olsen, Agus Sofian Tjandra, Tobin Kaufman-Osborn, Taewan Kim, Hansel Lo
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Publication number: 20230028054Abstract: A gas injector for processing a substrate includes a body having an inlet connectable to a gas source that is configured to provide a gas flow in a first direction into the inlet when processing a substrate on a substrate support disposed within a processing volume of a processing chamber, and an a gas injection channel formed in the body. The gas injection channel is in fluid communication with the inlet and configured to deliver the gas flow to an inlet of the processing chamber. The gas injection channel has a first interior surface and a second interior surface that are parallel to a second direction and a third direction. The second and third directions are misaligned with a center of the substrate, and are at an angle to the first direction towards a first edge of the substrate support.Type: ApplicationFiled: September 30, 2022Publication date: January 26, 2023Inventors: Eric Kihara SHONO, Vishwas Kumar PANDEY, Christopher S. OLSEN, Kartik SHAH, Hansel LO, Tobin KAUFMAN-OSBORN, Rene GEORGE, Lara HAWRYLCHAK, Erika HANSEN
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Publication number: 20220411927Abstract: Embodiments described herein generally relate to a processing system and a method of delivering a reactant gas. The processing system includes a substrate support system, an injection cone, and an intake. The injection cone includes a linear rudder. The linear rudder is disposed such that the flow of reactant gas through the injection cone results in film growth on a specific portion of a substrate. The method includes flowing the gas through the injection cone and delivering the gas onto the substrate below. The localization of the reactant gas, allows for film growth on a specific portion of the substrate.Type: ApplicationFiled: September 9, 2020Publication date: December 29, 2022Inventors: Vishwas Kumar PANDEY, Christopher OLSEN, Rene GEORGE, Eric SHONO, Lara HAWRYLCHAK, Erika HANSEN, Tobin KAUFMAN-OSBORN, Hansel LO, Kartik SHAH
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Patent number: 11501945Abstract: In one example, a chamber inlet assembly includes a chamber inlet, an outer coupling for a delivery line, and an inner coupling for a processing region of a processing chamber. The inner coupling and the outer coupling are on inner and outer ends, respectively, of the chamber inlet, wherein a cross-sectional area of the inner coupling is larger than a cross-sectional area of the outer coupling. The chamber inlet assembly also includes a longitudinal profile including the inner and outer ends and a first side and a second side, the first and second sides being on opposite sides of the chamber inlet, wherein a shape of the longitudinal profile comprises at least one of triangular, modified triangular, trapezoidal, modified trapezoidal, rectangular, modified rectangular, rhomboidal, and modified rhomboidal. The chamber inlet assembly also includes cassette including the chamber inlet and configured to set into a side wall of the processing chamber.Type: GrantFiled: November 23, 2020Date of Patent: November 15, 2022Assignee: Applied Materials, Inc.Inventors: Eric Kihara Shono, Vishwas Kumar Pandey, Christopher S. Olsen, Hansel Lo, Agus Sofian Tjandra, Taewan Kim, Tobin Kaufman-Osborn
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Patent number: 11501954Abstract: Embodiments of the present disclosure generally relate to a processing chamber for conformal oxidation of high aspect ratio structures. The processing chamber includes a chamber body with a first side and a second side opposite the first side, and a flow assembly disposed in the first side. The flow assembly includes a flow divider to direct fluid flow away from a center of a substrate disposed in a processing region of the processing chamber. The flow divider includes a crescent shaped first side, a top, and a bottom. The processing chamber also includes a distributed pumping structure located adjacent to the second side. The flow assembly is designed to reduce flow constriction of the radicals, leading to increased radical concentration and flux.Type: GrantFiled: May 19, 2021Date of Patent: November 15, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Vishwas Kumar Pandey, Kartik Shah, Christopher S. Olsen, Agus Sofian Tjandra, Hansel Lo, Eric Kihara Shono, Hemantha Raju
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Patent number: 11486038Abstract: A gas injector for processing a substrate includes a body having an inlet connectable to a gas source that is configured to provide a gas flow in a first direction into the inlet when processing a substrate on a substrate support disposed within a processing volume of a processing chamber, and an a gas injection channel formed in the body. The gas injection channel is in fluid communication with the inlet and configured to deliver the gas flow to an inlet of the processing chamber. The gas injection channel has a first interior surface and a second interior surface that are parallel to a second direction and a third direction. The second and third directions do not intersect a center of the substrate, and are at an angle to the first direction towards a first edge of the substrate support.Type: GrantFiled: January 29, 2020Date of Patent: November 1, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Eric Kihara Shono, Vishwas Kumar Pandey, Christopher S. Olsen, Kartik Shah, Hansel Lo, Tobin Kaufman-Osborn, Rene George, Lara Hawrylchak, Erika Hansen
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Publication number: 20220223383Abstract: Embodiments of the present disclosure generally relate to a process chamber for conformal oxidation of high aspect ratio structures. The process chamber includes a liner assembly that in one embodiment includes a body including a first opening and a second opening opposing the first opening, wherein the opening comprises a first end and a second end opposing the first end, and a flow valve disposed between the first opening and the second opening, the flow valve coupled to the body by a rotatable shaft that provides movement of the flow valve in angles between about 0 degrees and about 90 degrees relative to a central axis of the processing chamber.Type: ApplicationFiled: March 13, 2020Publication date: July 14, 2022Inventors: Eric Kihara SHONO, Vishwas Kumar PANDEY, Hansel LO, Christopher S. OLSEN, Tobin KAUFMAN-OSBORN, Tobin MAN-OSBORN, Rene GEORGE, Lara HAWRYLCHAK
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Publication number: 20220165547Abstract: Provided herein is a gas source comprising a flow conduit having an interior volume and an open end, a remote plasma source fluidly coupled to the flow conduit, a secondary gas source extending inwardly of the interior volume of the flow conduit, the secondary gas source including at least one gas port therein positioned to flow a secondary gas inwardly of the interior volume of the flow conduit.Type: ApplicationFiled: November 24, 2020Publication date: May 26, 2022Inventors: Vishwas Kumar PANDEY, Eric Kihara SHONO, Christopher S. OLSEN, Tobin KAUFMAN-OSBORN, Erika HANSEN, Rene GEORGE, Lara HAWRYLCHAK, Hansel LO, Kartik Bhupendra SHAH
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Publication number: 20210272776Abstract: Embodiments of the present disclosure generally relate to a processing chamber for conformal oxidation of high aspect ratio structures. The processing chamber includes a chamber body with a first side and a second side opposite the first side, and a flow assembly disposed in the first side. The flow assembly includes a flow divider to direct fluid flow away from a center of a substrate disposed in a processing region of the processing chamber. The flow divider includes a crescent shaped first side, a top, and a bottom. The processing chamber also includes a distributed pumping structure located adjacent to the second side. The flow assembly is designed to reduce flow constriction of the radicals, leading to increased radical concentration and flux.Type: ApplicationFiled: May 19, 2021Publication date: September 2, 2021Inventors: Vishwas Kumar PANDEY, Kartik Bhupendra SHAH, Christopher S. OLSEN, Agus Sofian TJANDRA, Hansel LO, Eric Kihara SHONO, Hemantha RAJU
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Patent number: 11081340Abstract: Methods for conformal radical oxidation of structures are provided. The method comprises positioning a substrate in a processing region of a processing chamber. The method further comprises flowing hydrogen gas into a precursor activator at a first flow rate, wherein the precursor activator is fluidly coupled with the processing region. The method further comprises flowing oxygen gas into the precursor activator at a second flow rate. The method further comprises flowing argon gas into the precursor activator at a third flow rate. The method further comprises generating a plasma in the precursor activator from the hydrogen gas, oxygen gas, and argon gas. The method further comprises flowing the plasma into the processing region. The method further comprises exposing the substrate to the plasma to form an oxide film on the substrate, wherein a growth rate of the oxide film is controlled by adjusting the third flow rate.Type: GrantFiled: April 15, 2020Date of Patent: August 3, 2021Assignee: Applied Materials, Inc.Inventors: Hansel Lo, Christopher S. Olsen, Eric Kihara Shono, Johanes S. Swenberg, Erika Hansen, Taewan Kim, Lara Hawrylchak
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Patent number: 11049696Abstract: Embodiments of the present disclosure generally relate to a processing chamber for conformal oxidation of high aspect ratio structures. The processing chamber includes a chamber body with a first side and a second side opposite the first side, and a flow assembly disposed in the first side. The flow assembly includes a flow divider to direct fluid flow away from a center of a substrate disposed in a processing region of the processing chamber. The flow divider includes a crescent shaped first side, a top, and a bottom. The processing chamber also includes a distributed pumping structure located adjacent to the second side. The flow assembly is designed to reduce flow constriction of the radicals, leading to increased radical concentration and flux.Type: GrantFiled: March 19, 2020Date of Patent: June 29, 2021Assignee: Applied Materials, Inc.Inventors: Vishwas Kumar Pandey, Kartik Shah, Christopher S. Olsen, Agus Sofian Tjandra, Hansel Lo, Eric Kihara Shono, Hemantha Raju
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Publication number: 20210074505Abstract: In one example, a chamber inlet assembly includes a chamber inlet, an outer coupling for a delivery line, and an inner coupling for a processing region of a processing chamber. The inner coupling and the outer coupling are on inner and outer ends, respectively, of the chamber inlet, wherein a cross-sectional area of the inner coupling is larger than a cross-sectional area of the outer coupling. The chamber inlet assembly also includes a longitudinal profile including the inner and outer ends and a first side and a second side, the first and second sides being on opposite sides of the chamber inlet, wherein a shape of the longitudinal profile comprises at least one of triangular, modified triangular, trapezoidal, modified trapezoidal, rectangular, modified rectangular, rhomboidal, and modified rhomboidal. The chamber inlet assembly also includes cassette including the chamber inlet and configured to set into a side wall of the processing chamber.Type: ApplicationFiled: November 23, 2020Publication date: March 11, 2021Inventors: Eric Kihara SHONO, Vishwas Kumar PANDEY, Christopher S. OLSEN, Hansel LO, Agus Sofian TJANDRA, Taewan KIM, Tobin KAUFMAN-OSBORN
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Patent number: 10847337Abstract: In one example, a chamber inlet assembly includes a chamber inlet, an outer coupling for a delivery line, and an inner coupling for a processing region of a processing chamber. The inner coupling and the outer coupling are on inner and outer ends, respectively, of the chamber inlet, wherein a cross-sectional area of the inner coupling is larger than a cross-sectional area of the outer coupling. The chamber inlet assembly also includes a longitudinal profile including the inner and outer ends and a first side and a second side, the first and second sides being on opposite sides of the chamber inlet, wherein a shape of the longitudinal profile comprises at least one of triangular, modified triangular, trapezoidal, modified trapezoidal, rectangular, modified rectangular, rhomboidal, and modified rhomboidal. The chamber inlet assembly also includes cassette including the chamber inlet and configured to set into a side wall of the processing chamber.Type: GrantFiled: January 15, 2019Date of Patent: November 24, 2020Assignee: APPLIED MATERIALS, INC.Inventors: Eric Kihara Shono, Vishwas Kumar Pandey, Christopher S. Olsen, Hansel Lo, Agus Sofian Tjandra, Taewan Kim, Tobin Kaufman-Osborn
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Publication number: 20200251331Abstract: Methods for conformal radical oxidation of structures are provided. The method comprises positioning a substrate in a processing region of a processing chamber. The method further comprises flowing hydrogen gas into a precursor activator at a first flow rate, wherein the precursor activator is fluidly coupled with the processing region. The method further comprises flowing oxygen gas into the precursor activator at a second flow rate. The method further comprises flowing argon gas into the precursor activator at a third flow rate. The method further comprises generating a plasma in the precursor activator from the hydrogen gas, oxygen gas, and argon gas. The method further comprises flowing the plasma into the processing region. The method further comprises exposing the substrate to the plasma to form an oxide film on the substrate, wherein a growth rate of the oxide film is controlled by adjusting the third flow rate.Type: ApplicationFiled: April 15, 2020Publication date: August 6, 2020Inventors: Hansel LO, Christopher S. OLSEN, Eric Kihara SHONO, Johanes S. SWENBERG, Erika HANSEN, Taewan KIM, Lara HAWRYLCHAK
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Patent number: D924825Type: GrantFiled: January 24, 2018Date of Patent: July 13, 2021Assignee: Applied Materials, Inc.Inventors: Eric Kihara Shono, Vishwas Kumar Pandey, Christopher S. Olsen, Hansel Lo, Agus Sofian Tjandra, Taewan Kim, Tobin Kaufman-Osborn
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Patent number: D1023987Type: GrantFiled: June 7, 2021Date of Patent: April 23, 2024Assignee: Applied Materials, Inc.Inventors: Eric Kihara Shono, Vishwas Kumar Pandey, Christopher S. Olsen, Hansel Lo, Agus Sofian Tjandra, Taewan Kim, Tobin Kaufman-Osborn