Abstract: A method and processing chamber for plenum driven hydroxyl combustion oxidation. A mixture is produced in a plenum. The mixture includes a first reactive gas injected from a first inlet and a second reactive gas injected from a second inlet. The mixture is injected towards a substrate of a processing chamber at a jet gas velocity greater than a flame gas velocity. A radical is produced as a function of the first gas and the second gas while heating the chamber.

Abstract: A method for forming an oxide layer includes forming at least a portion of a gate oxide layer on inner surfaces of an opening, forming a silicon nitride capping layer on the portion of the gate oxide layer, and performing a conversion process to at least partially oxidize the silicon nitride capping layer, forming a nitrogen-doped gate oxide layer.

Abstract: The present disclosure generally relates to a processing system comprising a flow assembly for processing thin substrates using low flow rates. The flow assembly comprises at least one compression part configured to compress a volume occupied by gas radicals flowing at a rate of about 0.1 sim to 5 slm from a plasma source to a chamber in two dimensions. The at least one compression part compresses the volume occupied by the gas radicals about 50% to about 90% from an initial cross-sectional area of the port of the process chamber. In some embodiments, the at least one compression part is a two compression parts, where a first compression part coupled to the port of the process chamber is larger in volume than a second compression part coupled to the first compression part and the chamber. In such an embodiment, the first and second compression parts are removable.

Abstract: The present disclosure generally provides methods of providing at least metastable radical molecular species and/or radical atomic species to a processing volume of a process chamber during an electronic device fabrication process, and apparatus related thereto. In one embodiment, the apparatus is a gas injection assembly disposed between a remote plasma source and a process chamber. The gas injection assembly includes a body, a dielectric liner disposed in the body that defines a gas mixing volume, a first flange to couple the gas injection assembly to a process chamber, and a second flange to couple the gas injection assembly to the remote plasma source. The gas injection assembly further includes one or more gas injection ports formed through the body and the liner.

Abstract: A method and processing chamber for plenum driven hydroxyl combustion oxidation. A mixture is produced in a plenum. The mixture includes a first reactive gas injected from a first inlet and a second reactive gas injected from a second inlet. The mixture is injected towards a substrate of a processing chamber at a jet gas velocity greater than a flame gas velocity. A radical is produced as a function of the first gas and the second gas while heating the chamber.

Abstract: The present disclosure generally relates to a processing system comprising a flow assembly for processing thin substrates using low flow rates. The flow assembly comprises at least one compression part configured to compress a volume occupied by gas radicals flowing at a rate of about 0.1 slm to 5 slm from a plasma source to a chamber in two dimensions. The at least one compression part compresses the volume occupied by the gas radicals about 50% to about 90% from an initial cross-sectional area of the port of the process chamber. In some embodiments, the at least one compression part is a two compression parts, where a first compression part coupled to the port of the process chamber is larger in volume than a second compression part coupled to the first compression part and the chamber. In such an embodiment, the first and second compression parts are removable.

Abstract: The present subject matter relates to systems and methods for producing a MOSFET by applying a nitridation pre-treatment (e.g., plasma or thermal) directly on a silicon carbide surface. The nitridation pre-treatment can be followed by a deposited gate oxide. In this way, instead of using a thermal oxide and a thermal nitrogen oxide anneal, nitrogen is introduced at the interface to passivate traps without any thermal oxidation of the silicon carbide. In addition, the post-anneal step can be performed, resulting in an improvement in mobility.

Abstract: The methods and devices described herein provide for thin and high-quality oxide layers with controlled interfacial roughness. In some embodiments, the aforementioned oxide layers are formed using radical oxidation processes with slow oxidation rates and relatively low-to-moderate temperatures, followed by nitrogen (N2) annealing at relatively high temperatures to densify the oxide layer(s) while also relieving (e.g., relaxing) interfacial stresses by inducing the viscous flow of the oxide.

Abstract: A method for forming an oxide layer includes forming a protective interlayer oxide on sidewalls of a trench formed on a substrate, forming a silicon nitride layer on the protective interlayer oxide, by a plasma-enhanced atomic layer deposition (PE ALD) process utilizing nitrogen-containing process gas, the silicon nitride layer having a concentration gradient of nitrogen varying from high concentration away from the protective interlayer oxide to low concentration near the protective interlayer oxide, and performing a conversion process to oxidize the formed silicon nitride layer to at least partially convert the formed silicon nitride layer to a silicon oxide layer.

Abstract: Described herein is a method for selectively oxidizing a substrate. The method includes forming a non-conformal layer on at least one side surface of a trench or a hole of a substrate. After forming the non-conformal layer, the at least one trench or at least one hole may be selectively oxidized, wherein oxidation of the non-conformal layer and an exposed portion of the at least one side wall not covered by the non-conformal layer occurs to form an oxide layer. The oxide layer is thicker at a lower portion of the at least one side wall than the upper portion of the at least one side wall, such that it tapers.

Abstract: The disclosure provides a system and methods of performing a cyclic growth oxidation process. The method includes forming a plasma of a plasma gas using a remote plasma source fluidly coupled to a conduit coupled to a first nozzle of a processing chamber. An oxidation radical is produced. A first oxidation process is performed by introducing the oxidation radical for a first period of time to the processing chamber using the first nozzle. A bake process is performed for a second period of time. A second oxidation process is performed by introducing the oxidation radical for a third period of time.

Abstract: A method for forming an oxide layer includes forming a protective interlayer oxide on sidewalls of a trench formed on a substrate, forming a silicon nitride layer on the protective interlayer oxide, by a plasma-enhanced atomic layer deposition (PE ALD) process utilizing nitrogen-containing process gas, the silicon nitride layer having a concentration gradient of nitrogen varying from high concentration away from the protective interlayer oxide to low concentration near the protective interlayer oxide, and performing a conversion process to oxidize the formed silicon nitride layer to at least partially convert the formed silicon nitride layer to a silicon oxide layer.

Abstract: Exemplary semiconductor processing methods may include performing a pre-treatment on a substrate housed within a processing region of a semiconductor processing chamber. The substrate may include a layer of silicon-and-carbon-containing material. The pre-treatment may remove native oxide or residue from a surface of the layer of silicon-and-carbon-containing material. The methods may include providing a silicon-containing precursor to the processing region of the semiconductor processing chamber. The methods may include contacting the substrate with the silicon-containing precursor. The contacting may deposit a layer of silicon-containing material on the layer of silicon-and-carbon-containing material. The methods may include providing an oxygen-containing precursor to the processing region of the semiconductor processing chamber. The methods may include contacting the substrate with the oxygen-containing precursor.

Abstract: Embodiments described herein generally relate to a processing system and a method of delivering a reactant gas. The processing system includes a substrate support system, an injection cone, and an intake. The injection cone includes a linear rudder. The linear rudder is disposed such that the flow of reactant gas through the injection cone results in film growth on a specific portion of a substrate. The method includes flowing the gas through the injection cone and delivering the gas onto the substrate below. The localization of the reactant gas, allows for film growth on a specific portion of the substrate.

Abstract: Systems and methods for hydroxyl driven combustion include introducing a first gas via at least a first orifice into a processing chamber having a substrate disposed on a substrate support. A second gas is introduced into the processing chamber via a plurality of second orifices. The plurality of first orifices and the plurality of second orifices are oriented in an alternating pattern such that each second orifice of the plurality of second orifices is at least partially surrounded by at least a first orifice of the plurality of first orifices. A radical is produced as a function of the first gas and the second gas while heating the chamber.

Abstract: A method and processing chamber for plenum driven hydroxyl combustion oxidation. A mixture is produced in a plenum. The mixture includes a first reactive gas injected from a first inlet and a second reactive gas injected from a second inlet. The mixture is injected towards a substrate of a processing chamber at a jet gas velocity greater than a flame gas velocity. A radical is produced as a function of the first gas and the second gas while heating the chamber.

Abstract: Systems and methods of orifice driven hydroxyl combustion oxidation include introducing a first gas via at least a first orifice into a processing chamber having a substrate disposed on a substrate support. A second gas is introduced into the processing chamber via a plurality of second orifices. The plurality of second orifices are oriented substantially perpendicular to the at least a first orifice. A radical is produced as a function of the first gas and the second gas while heating the chamber.

Abstract: The disclosure provides system, computer readable medium, and method for producing a hydroxyl radical. A plasma of a plasma gas is formed, via a controller, using a remote plasma source fluidly coupled to a gas inlet conduit coupled to a first nozzle of a processing chamber. A first gas radical is produced by flowing a first gas from a first gas source through the remote plasma source. The first gas radical is introduced into the processing chamber using the gas inlet conduit coupled to the first nozzle. A second gas from a second gas source is introduced using a plurality of second nozzles fluidly of the processing chamber. An oxidation radical is produced by mixing the first gas radical and the second gas in the processing chamber.

Abstract: The present disclosure generally relate to semiconductor device fabrication, and more particularly, to methods of forming a bottom thick oxide layer in a high aspect ratio semiconductor structures. In certain embodiments, the method includes depositing a non-conformal oxide layer on in a feature on a substrate, performing an oxidation process to thermally grow an oxide layer beneath the deposited non-conformal oxide layer in the feature, and selectively stripping the non-conformal oxide layer to expose the thermally grown oxide layer.

Abstract: Methods of treating a substrate are provided. In some embodiments, the method includes exposing a substrate to a vacuum, wherein the substrate has one or more memory holes or trenches. The method further includes treating the substrate with a pre-treatment gas or plasma. The method includes oxidizing the substrate while the substrate is still under the vacuum. In some embodiments, the one or more memory holes have impurity buildup.