Abstract: In an embodiment a conversion element includes a grid having a plurality of openings, a plurality of conversion segments configured to convert a part of a primary radiation into a secondary radiation, wherein the conversion segments are arranged in the openings, wherein the conversion segments include a matrix material into which fluorescent particles are incorporated, wherein the fluorescent particles are sedimented in a sedimented layer and a semiconductor material, a plastic or a metal, wherein the grid terminates flush with the conversion segments.

Abstract: A silicone composition includes a multiphase mixture of a low-refractive silicone having a refractive index n25D589 less than 1.45 and a high-refractive silicone having a refractive index n25D589 greater than 1.50, wherein a proportion of high-refractive silicone is 0.1 to 5.0 mass percent in relation to a total mass of high-refractive and low-refractive silicone, and the high-refractive silicone forms inclusions within the low-refractive silicone.

Abstract: In an embodiment a conversion element includes a grid having a plurality of openings, a plurality of conversion segments configured to convert a part of a primary radiation into a secondary radiation, wherein the conversion segments are arranged in the openings, wherein the conversion segments include a matrix material into which fluorescent particles are incorporated, wherein the fluorescent particles are sedimented in a sedimented layer and a semiconductor material, a plastic or a metal, wherein the grid terminates flush with the conversion segments.

Abstract: A silicone composition includes a multiphase mixture of a low-refractive silicone having a refractive index n25D589 less than 1.45 and a high-refractive silicone having a refractive index n25D589 greater than 1.50, wherein a proportion of high-refractive silicone is 0.1 to 5.0 mass percent in relation to a total mass of high-refractive and low-refractive silicone, and the high-refractive silicone forms inclusions within the low-refractive silicone.

Abstract: A method of producing a lens for an optoelectronic lighting device, wherein the optoelectronic lighting device includes an optoelectronic semiconductor component having a light-emitting surface, including applying a curable lens material to the light-emitting surface, and curing the lens material to form a lens from a cured lens material, wherein after the application and before or during the curing, the light-emitting surface is arranged into a position in which a normal vector of the light-emitting surface oriented in the direction of the applied lens material and a normal force of a weight acting on the light-emitting surface are parallel to one another so that the lens material at least partially cures in the position.

Abstract: An optoelectronic component comprising an optoelectronic semiconductor chip (104) having a contact side (106) and a radiation coupling-out side (108) situated opposite; a chip carrier (102), on which the semiconductor chip (104) is applied via its contact side (106); a radiation conversion element (110) applied on the radiation coupling-out side (108); and a reflective potting compound (112), which is applied on the chip carrier (102) and laterally encloses the semiconductor chip (104) and the radiation conversion element (110); wherein the potting compound (112) adjoins an upper edge of the radiation conversion element (110) in a substantially flush fashion, such that a top side of the radiation conversion element (110) is free of the potting compound (112).

Abstract: An LED multichip module may include a plurality of LED chips, which have electrical terminals and are connected in series via electrical connections, and have a designated operating voltage, wherein at least one short-circuiting connection is provided, which connects two of the terminals or connections electrically conductively to one another, and the short-circuiting connection bypasses at least one of the LED chips or a resistor, with the result that the operating voltage is in the range of between 150 V and 350 V.

Abstract: An optoelectronic component comprising an optoelectronic semiconductor chip (104) having a contact side (106) and a radiation coupling-out side (108) situated opposite; a chip carrier (102), on which the semiconductor chip (104) is applied via its contact side (106); a radiation conversion element (110) applied on the radiation coupling-out side (108); and a reflective potting compound (112), which is applied on the chip carrier (102) and laterally encloses the semiconductor chip (104) and the radiation conversion element (110); wherein the potting compound (112) adjoins an upper edge of the radiation conversion element (110) in a substantially flush fashion, such that a top side of the radiation conversion element (110) is free of the potting compound (112).

Abstract: A generator for producing a low-noise, high-frequency signal has a monomode first laser connected via an optical isolator to a second laser so as to permit light generated by the fist laser to be injected into the second laser. The difference in the frequencies of the lasers and the intensity of the injected light is selected so as to prevent the second laser from locking onto the free-running frequency of the first laser.