Abstract: A silicon membrane pressure sensor which has a carrier chip and a membrane chip 3 for which overload protection is desired to protect against the pressure on the front side of the membrane. An overload member 7 is mounted between the carrier chip 2 and the membrane chip 3 such that the overload member is connected to the membrane chip at a middle island portion 5 of the membrane chip 3 and with a first distance D1 from the carrier chip 2 in the non-loaded condition such that when pressure occurs the overload member will remove the load on the membrane chip.

Abstract: A method for producing a recessed oxide allows the fabrication of large bonding pads with small capacitance. These bonding pads on simultaneously thick oxide on the semiconductor surface enable contact exposure with good image formation of fine structures on the surface of a transistor. With a protective layer (2), a region (S1) of a semiconductor surface (1) is covered. The area of the semiconductor surface (1) uncovered with the protective layer (2) is etched. Subsequently, an oxide (3) of desired thickness (b) is deposited. With a second phototechnological step the deposited oxide (3) is etched with a structure (S2). Thermal oxidation follows with growth of a hermetic oxide layer (4) the thickness (c) of which is small relative to the thickness (b) of the deposited oxide layer (3). The thermic oxide layer (4) is structured to form the desired geometry.

Abstract: In a process for the stabilization of a PN junction an oxide layer (12) is produced on a semiconductor substrate (11), and above this layer a nitride layer (13) is also produced. The oxide layer (12) is wet-chemically etched following the formation and etching of the nitride layer (13). Following the wet chemical etching of the oxide layer (12), the overlapping nitride (13) is re-etched. Dopant implantation takes place in the wet-chemically-etched region. This then is followed by a diffusion. A process of this type achieves high electrical stability for an electronic component. Thereupon, the photoresist (14) or any other type of layer covering the nitride (13) is removed.