Abstract: A dehydrogenation reaction system for a liquid hydrogen source material includes a storage device used for storing a liquid hydrogen source material and a liquid hydrogen storage carrier, a reaction still for dehydrogenation of the liquid hydrogen source material, a gas-liquid separator for separating the products, hydrogen and liquid hydrogen storage carrier which are generated after dehydrogenation of the liquid hydrogen source material, a buffer tank used for storing hydrogen, and a heating device used for heating the reaction still. The liquid hydrogen source material is input into the reaction still by means of a pump through an input pipe, dehydrogenation reaction of the liquid hydrogen source material is conducted in the reaction still, generated hydrogen is conveyed to the buffer tank, and the liquid hydrogen storage carrier generated after dehydrogenation is conveyed back to the storage device.

Abstract: An electrode material for a direct fuel cell or an electrochemical hydrogenation electrolytic tank, includes component A, or component B, or the mixture of component A and component B. The component A is any one of or a mixture of two or more than two of HnNb2O5, HnV2O5, HnMoO3, HnTa2O5 or HnWO3 at any ratio, where 0<n?4. The component B is any one of or a mixture of two or more than two of Nb2O5, V2O5, MoO3, Ta2O5, WO3 at any ratio.

Abstract: The present invention discloses a dehydrogenation reaction system for a liquid hydrogen source material, comprising a storage device used for storing a liquid hydrogen source material and a liquid hydrogen storage carrier, a reaction still used for dehydrogenation of the liquid hydrogen source material, a gas-liquid separator used for separating the products, hydrogen and liquid hydrogen storage carrier which are generated after dehydrogenation of the liquid hydrogen source material, a buffer tank used for storing hydrogen, and a heating device used for heating the reaction still. The liquid hydrogen source material is input into the reaction still by means of a pump through an input pipe, dehydrogenation reaction of the liquid hydrogen source material is conducted in the reaction still, generated hydrogen is conveyed to the buffer tank, and the liquid hydrogen storage carrier generated after dehydrogenation is conveyed back to the storage device.

Abstract: A hydrogen storage material in liquid form is provided. The liquid hydrogen storage comprises at least two different hydrogen storage components, each one of the components is selected from an unsaturated aromatic hydrocarbon or a heterocyclic unsaturated compound, and at least one of the hydrogen storage components is a low-melting-point compound whose melting point is lower than 80 DEG C.

Abstract: An electrode material for a direct fuel cell or an electrochemical hydrogenation electrolytic tank, includes component A, or component B, or the mixture of component A and component B. The component A is any one of or a mixture of two or more than two of HnNb2O5, HnV2O5, HnMoO3, HnTa2O5 or HnWO3 at any ratio, where 0<n?4. The component B is any one of or a mixture of two or more than two of Nb2O5, V2O5, MoO3, Ta2O5, WO3 at any ratio.

Abstract: The present invention is related to a family of Group 4 metal precursors represented by the formula: M(OR1)2(R2C(O)C(R3)C(O)OR1)2 wherein M is a Group 4 metals of Ti, Zr, or Hf; wherein R1 is selected from the group consisting of a linear or branched C1-10 alkyl and a C6-12 aryl, preferably methyl, ethyl or n-propyl; R2 is selected from the group consisting of branched C3-10 alkyls, preferably iso-propyl, tert-butyl, sec-butyl, iso-butyl, or tert-amyl and a C6-12 aryl; R3 is selected from the group consisting of hydrogen, C1-10 alkyls, and a C6-12 aryl, preferably hydrogen. In a preferred embodiment of this invention, the precursor is a liquid or a solid with a melting point below 60° C.

Abstract: Described herein are precursors and methods of forming dielectric films. In one aspect, there is provided a silicon precursor having the following formula I: wherein R1 is independently selected from hydrogen, a linear or branched C1 to C6 alkyl, a linear or branched C2 to C6 alkenyl, a linear or branched C2 to C6 alkynyl, a C1 to C6 alkoxy, a C1 to C6 dialkylamino and an electron withdrawing group and n is a number selected from 0, 1, 2, 3, 4, and 5; and R2 is independently selected from hydrogen, a linear or branched C1 to C6 alkyl, a linear or branched C2 to C6 alkenyl, a linear or branched C2 to C6 alkynyl, a C1 to C6 alkoxy, a C1 to C6 dialkylamino, a C6 to C10 aryl, a linear or branched C1 to C6 fluorinated alkyl, and a C4 to C10 cyclic alkyl group.

Abstract: This invention discloses the method of forming silicon nitride, silicon oxynitride, silicon oxide, carbon-doped silicon nitride, carbon-doped silicon oxide and carbon-doped oxynitride films at low deposition temperatures. The silicon containing precursors used for the deposition are monochlorosilane (MCS) and monochloroalkylsilanes. The method is preferably carried out by using plasma enhanced atomic layer deposition, plasma enhanced chemical vapor deposition, and plasma enhanced cyclic chemical vapor deposition.

Abstract: A direct Fuel Cell is based on organic liquid hydrogen storage materials, and includes a fuel cell unit connected to load through AC/DC convert circuit. The outlet and inlet of hydrogen storage materials on the fuel cell unit is connected to hydrogen storage tank through hydrogen storage output pipe and hydrogen storage input pipe, respectively. There is a pump for hydrogenated hydrogen storage materials on the hydrogenated hydrogen storage materials input pipe; the second outlet for water and gas on the fuel cell unit is connected to water tank through the second water output pipe. The water and gas inlet on the fuel cell unit is connected with oxygen input pipe; there is a gas outlet on the top of the water tank; the hydrogen storage materials tank contains hydrogen storage materials. The mentioned hydrogen storage materials are a multi-component mixture of liquid unsaturated heterocyclic aromatics.

Abstract: The present invention discloses a method of preparing a transparent conducting oxide (TCO) film comprising the steps of: applying surface modified TCO nanoparticles onto a surface of a substrate; and cross-linking the surface modified TCO nanoparticles. The present invention also provides a transparent conducting oxide film prepared according to the method.

Abstract: This invention discloses the method of forming silicon nitride, silicon oxynitride, silicon oxide, carbon-doped silicon nitride, carbon-doped silicon oxide and carbon-doped oxynitride films at low deposition temperatures. The silicon containing precursors used for the deposition are monochlorosilane (MCS) and monochloroalkylsilanes. The method is preferably carried out by using plasma enhanced atomic layer deposition, plasma enhanced chemical vapor deposition, and plasma enhanced cyclic chemical vapor deposition.

Abstract: This invention discloses the method of forming silicon nitride, silicon oxynitride, silicon oxide, carbon-doped silicon nitride, carbon-doped silicon oxide and carbon-doped oxynitride films at low deposition temperatures. The silicon containing precursors used for the deposition are monochlorosilane (MCS) and monochloroalkylsilanes. The method is preferably carried out by using plasma enhanced atomic layer deposition, plasma enhanced chemical vapor deposition, and plasma enhanced cyclic chemical vapor deposition.

Abstract: Described herein are precursors and methods of forming dielectric films. In one aspect, there is provided a silicon precursor having the following formula I: wherein R1 is independently selected from hydrogen, a linear or branched C1 to C6 alkyl, a linear or branched C2 to C6 alkenyl, a linear or branched C2 to C6 alkynyl, a C1 to C6 alkoxy, a C1 to C6 dialkylamino and an electron withdrawing group and n is a number selected from 0, 1, 2, 3, 4, and 5; and R2 is independently selected from hydrogen, a linear or branched C1 to C6 alkyl, a linear or branched C2 to C6 alkenyl, a linear or branched C2 to C6 alkynyl, a C1 to C6 alkoxy, a C1 to C6 dialkylamino, a C6 to C10 aryl, a linear or branched C1 to C6 fluorinated alkyl, and a C4 to C10 cyclic alkyl group.

Abstract: Aminosilane precursors for depositing silicon-containing films, and methods for depositing silicon-containing films from these aminosilane precursors, are described herein. In one embodiment, there is provided an aminosilane precursor for depositing silicon-containing film comprising the following formula (I): (R1R2N)nSiR34-n??(I) wherein substituents R1 and R2 are each independently chosen from an alkyl group comprising from 1 to 20 carbon atoms and an aryl group comprising from 6 to 30 carbon atoms, at least one of substituents R1 and R2 comprises at least one electron withdrawing substituent chosen from F, Cl, Br, I, CN, NO2, PO(OR)2, OR, SO, SO2, SO2R and wherein R in the at least one electron withdrawing substituent is chosen from an alkyl group or an aryl group, R3 is chosen from H, an alkyl group, or an aryl group, and n is a number ranging from 1 to 4.

Abstract: A method for forming metal-containing films by atomic layer deposition using precursors of the formula: M(OR1)(OR2)(R3C(O)C(R4)C(O)XR5y)2 wherein M is Group 4 metals; wherein R1 and R2 can be same or different selected from the group consisting of a linear or branched C1-10 alkyl and a C6-12 aryl; R3 can be selected from the group consisting of linear or branched C1-10 alkyls, preferably C1-3 alkyls and a C6-12 aryl; R4 is selected from the group consisting of hydrogen, C1-10 alkyls, and a C6-12 aryl, preferably hydrogen; R5 is selected from the group consisting of C1-10 linear or branched alkyls, and a C6-12 aryl, preferably a methyl or ethyl group; X?O or N wherein when X?O, y=1 and R1, 2 and 5 are the same, when X?N, y=2 and each R5 can be the same or different.

Abstract: The present invention is related to a family of Group 4 metal precursors represented by the formula: M(OR1)2(R2C(O)C(R3)C(O)OR1)2 wherein M is a Group 4 metals of Ti, Zr, or Hf; wherein R1 is selected from the group consisting of a linear or branched C1-10 alkyl and a C6-12 aryl, preferably methyl, ethyl or n-propyl; R2 is selected from the group consisting of branched C3-10 alkyls, preferably iso-propyl, tert-butyl, sec-butyl, iso-butyl, or tert-amyl and a C6-12 aryl; R3 is selected from the group consisting of hydrogen, C1-10 alkyls, and a C6-12 aryl, preferably hydrogen. In a preferred embodiment of this invention, the precursor is a liquid or a solid with a melting point below 60° C.

Abstract: The present invention is a process for spin-on deposition of a silicon dioxide-containing film under oxidative conditions for gap-filling in high aspect ratio features for shallow trench isolation used in memory and logic circuit-containing semiconductor substrates, such as silicon wafers having one or more integrated circuit structures contained thereon, comprising the steps of: providing a semiconductor substrate having high aspect ratio features; contacting the semiconductor substrate with a liquid formulation comprising a low molecular weight aminosilane; forming a film by spreading the liquid formulation over the semiconductor substrate; heating the film at elevated temperatures under oxidative conditions. Compositions for this process are also set forth.

Abstract: A process is described for depositing a metal film on a substrate surface having a diffusion barrier layer deposited thereupon. In one embodiment of the present invention, the process includes: providing a surface of the diffusion barrier layer that is substantially free of an elemental metal and forming the metal film on at least a portion of the surface via deposition by using a organometallic precursor. In certain embodiments, the diffusion barrier layer may be exposed to an adhesion promoting agent prior to or during at least a portion of the forming step. Suitable adhesion promoting agents include nitrogen, nitrogen-containing compounds, carbon-containing compounds, carbon and nitrogen containing compounds, silicon-containing compounds, silicon and carbon containing compounds, silicon, carbon, and nitrogen containing compounds, or mixtures thereof. The process of the present invention provides substrates having enhanced adhesion between the diffusion barrier layer and the metal film.

Abstract: A plurality of metal-containing complexes of a polydentate beta-ketoiminate, one embodiment of which is represented by the structure are shown: wherein M is a metal such as calcium, strontium, barium, scandium, yttrium, lanthanum, titanium, zirconium, vanadium, tungsten, manganese, cobalt, iron, nickel, ruthenium, zinc, copper, palladium, platinum, iridium, rhenium, osmium; wherein R1 is selected from the group consisting of alkyl, fluoroalkyl, cycloaliphatic, and aryl, having from 1 to 10 carbon atoms; R2 can be from the group consisting of hydrogen, alkyl, alkoxy, cycloaliphatic, and aryl; R3 is linear or branched selected from the group consisting of alkylene, fluoroalkyl, cycloaliphatic, and aryl; R4 is an alkylene bridge; R5-6 are individually linear or branched selected from the group consisting of alkyl, fluoroalkyl, cycloaliphatic, aryl, and they can be connected to form a ring containing carbon, oxygen, or nitrogen atoms; n is an integer equal to the valence of the metal M.

Abstract: We have used the state-of-the-art computational chemistry techniques to identify adhesion promoting layer materials that provide good adhesion of copper seed layer to the adhesion promoting layer and the adhesion promoting layer to the barrier layer. We have identified factors responsible for providing good adhesion of copper layer on various metallic surfaces and circumstances under which agglomeration of copper film occur. Several promising adhesion promoting layer materials based on chromium alloys have been predicted to be able to significantly enhance the adhesion of copper films. Chromium containing complexes of a polydentate ?-ketoiminate have been identified as chromium containing precursors to make the alloys with chromium.