Abstract: For producing a directional layer for instance with constant nominal directionality, such as a low-retentivity layer with a preferred direction of magnetization or a support layer for such a layer by cathode sputtering on a substrate surface (4), the coating process takes place in a manner whereby particles emanating from a target surface (6) impinge predominantly from directions whose projections onto the substrate surface (4) lies within a preferred angular range surrounding the nominal direction. This is achieved for instance by positioning a collimator (8), encompassing plates (9) that extend at a normal angle to the substrate surface (4) parallel to the nominal direction in front of the substrate surface (4), but in lieu of or in addition to such positioning the location or movement of the substrate surface (4) relative to the target surface (6) can also be suitably adjusted or controlled.

Abstract: To provide, in a magnetron sputtering apparatus for coating a substrate with a material of high magnetic permeability, for a sufficient trapping field of at least 24 kA/m (300 Oe) field strength above a target surface a target assembly consists of target plates (34, 33, 32) separated by through-going slits (35, 36) which the magnetic field must cross and to a support plate (31) consisting of copper to which the backside of the target is fixed. In order to avoid any release of material from the support plate and deposition of the same on the substrate each of the slits (35, 36) is shaped in such a way that there is no line-of-sight connection between the gap at the target surface and the support plate (31) at the backside of the target through the slit, the latter having, e.g., two sections which are perpendicular to the target surface, one ending at the target surface and the other at the support plate, and which are laterally offset and connected by a third section which is parallel to the target surface.

Abstract: For producing a directional layer for instance with constant nominal directionality, such as a low-retentivity layer with a preferred direction of magnetization or a support layer for such a layer by cathode sputtering on a substrate surface (4), the coating process takes place in a manner whereby particles emanating from a target surface (6) impinge predominantly from directions at which their projection onto the substrate surface (4) lies within a preferred angular range surrounding the nominal direction. This is achieved for instance by positioning a collimator (8), encompassing plates (9) that extend at a normal angle to the substrate surface (4) parallel to the nominal direction in front of the substrate surface (4), but in lieu of or in addition to such positioning the location or movement of the substrate surface (4) relative to the target surface (6) can also be suitably adjusted or controlled.