Abstract: Ohmic contacts to semiconductor surfaces are fabricated by a process which includes the formation of an adherent, uniform insulating film at the interface between the semiconductor surface and the metallization layer. The insulating film contains stationary charges of sign opposite to the sign of the conductivity of the semiconductor whereby image charges are introduced in the semiconductor. These image charges are located near the semiconductor surface and are of sufficient density to induce the formation of an accumulation layer. The minimum charge density required in the insulating layer is determined by the density of the surface states, Q.sub.ss, in the semiconductor. Minimum Q.sub.ss for silicon is about 5 .times. 10.sup.10 charges/cm.sup.2. The structure thus formed will present an electrical resistance resulting almost solely from the tunneling resistance of the insulating layer.