Abstract: Methods of encapsulating perovskites, such as metal halide perovskites, that may include depositing a nitride or an oxide on a film that includes a perovskite. Composite materials that include a perovskite layer and a layer of a nitride or an oxide. Devices, such as electronic devices, that include composite materials.

Abstract: Bandgap-tunable perovskite compositions are provided having the formula CsPb(AxBy)3, wherein A and B are each a halogen. The mixed halide perovskite composition has a morphology which suppresses phase segregation to stabilize a tuned bandgap of the mixed halide perovskite composition. For example, the perovskite may be in the form of nanocrystals embedded in a non-perovskite matrix, which, for example, may have the formula Cs4Pb(AxBy)6, wherein A and B are each a halogen. Solar cells and light-emitting diodes comprising the mixed perovskite compositions are also provided.

Abstract: Bandgap-tunable perovskite compositions are provided having the formula CsPb(A)xBy)3, wherein A and B are each a halogen. The mixed halide perovskite composition has a morphology which suppresses phase segregation to stabilize a tuned bandgap of the mixed halide perovskite composition. For example, the perovskite may be in the form of nanocrystals embedded in a non-perovskite matrix, which, for example, may have the formula Cs4Pb(A)xBy)6, wherein A and B are each a halogen. Solar cells and light-emitting diodes comprising the mixed perovskite compositions are also provided.

Abstract: Provided herein are metal halide perovskite nanoplatelets, methods for making metal halide perovskite nanoplatelets, and devices and composite materials that include metal halide nanoperovskite nanoplatelets. The metal halide perovskite nanoplatelets may be stable at ambient temperature and pressure, thereby easing device fabrication.

Abstract: Bandgap-tunable perovskite compositions are provided having the formula CsPb(AxBy)3, wherein A and B are each a halogen. The mixed halide perovskite composition has a morphology which suppresses phase segregation to stabilize a tuned bandgap of the mixed halide perovskite composition. For example, the perovskite may be in the form of nanocrystals embedded in a non-perovskite matrix, which, for example, may have the formula Cs4Pb(AxBy)6, wherein A and B are each a halogen. Solar cells and light-emitting diodes comprising the mixed perovskite compositions are also provided.

Abstract: Provided herein are perovskite-polymer films, methods of forming polymer-perovskite films, and devices including polymer-perovskite films. The polymer-perovskite films may include a plurality of methylammonium lead chloride (CH3NH3PbCl3) nanopillar crystals embedded in a polymer matrix. The devices can be optoelectronic devices, such as light emitting diodes, which include polymer-perovskite films. The polymer-perovskite films of the devices can be hole transport layers in the devices. The methods of making films may include spin casting a precursor solution followed by thermal annealing.

Abstract: Provided herein are all-inorganic perovskite-based films, devices including all-inorganic perovskite-based films, and methods of forming all-inorganic perovskite-based films. The methods may include casting a precursor formulation that includes an all-inorganic perovskite, a liquid, and a polymer. The amount of polymer in the precursor formulation may be less than the amount of all-inorganic perovskite in the precursor formulation.

Abstract: Bandgap-tunable perovskite compositions are provided having the formula CsPb(A)xBy)3, wherein A and B are each a halogen. The mixed halide perovskite composition has a morphology which suppresses phase segregation to stabilize a tuned bandgap of the mixed halide perovskite composition. For example, the perovskite may be in the form of nanocrystals embedded in a non-perovskite matrix, which, for example, may have the formula Cs4Pb(A)xBy)6, wherein A and B are each a halogen. Solar cells and light-emitting diodes comprising the mixed perovskite compositions are also provided.

Abstract: Provided herein are all-inorganic perovskite-based films, devices including all-inorganic perovskite-based films, and methods of forming all-inorganic perovskite-based films. The methods may include casting a precursor formulation that includes an all-inorganic perovskite, a liquid, and a polymer. The amount of polymer in the precursor formulation may be less than the amount of all-inorganic perovskite in the precursor formulation.

Abstract: Provided herein are all-inorganic perovskite-based films, devices including all-inorganic perovskite-based films, and methods of forming all-inorganic perovskite-based films. The methods may include casting a precursor formulation that includes an all-inorganic perovskite, a liquid, and a polymer. The amount of polymer in the precursor formulation may be less than the amount of all-inorganic perovskite in the precursor formulation.

Abstract: Provided herein are perovskite-polymer films, methods of forming polymer-perovskite films, and devices including polymer-perovskite films. The polymer-perovskite films may include a plurality of methylammonium lead chloride (CH3NH3PbCl3) nanopillar crystals embedded in a polymer matrix. The devices can be optoelectronic devices, such as light emitting diodes, which include polymer-perovskite films. The polymer-perovskite films of the devices can be hole transport layers in the devices. The methods of making films may include spin casting a precursor solution followed by thermal annealing.

Abstract: Provided herein are perovskite-polymer films, methods of forming polymer-perovskite films, and devices including polymer-perovskite films. The polymer-perovskite films may include a plurality of methylammonium lead chloride (CH3NH3PbCl3) nanopillar crystals embedded in a polymer matrix. The devices can be optoelectronic devices, such as light emitting diodes, which include polymer-perovskite films. The polymer-perovskite films of the devices can be hole transport layers in the devices. The methods of making films may include spin casting a precursor solution followed by thermal annealing.

Abstract: Provided herein are all-inorganic perovskite-based films, devices including all-inorganic perovskite-based films, and methods of forming all-inorganic perovskite-based films. The methods may include casting a precursor formulation that includes an all-inorganic perovskite, a liquid, and a polymer. The amount of polymer in the precursor formulation may be less than the amount of all-inorganic perovskite in the precursor formulation.

Abstract: Provided herein are metal halide perovskite nanoplatelets, methods for making metal halide perovskite nanoplatelets, and devices and composite materials that include metal halide nanoperovskite nanoplatelets. The metal halide perovskite nanoplatelets may be stable at ambient temperature and pressure, thereby easing device fabrication.

Abstract: Provided herein are perovskite-polymer films, methods of forming polymer-perovskite films, and devices including polymer-perovskite films. The polymer-perovskite films may include a plurality of methylammonium lead chloride (CH3NH3PbCl3) nanopillar crystals embedded in a polymer matrix. The devices can be optoelectronic devices, such as light emitting diodes, which include polymer-perovskite films. The polymer-perovskite films of the devices can be hole transport layers in the devices. The methods of making films may include spin casting a precursor solution followed by thermal annealing.