Patents by Inventor Hanwei Yi

Hanwei Yi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods for forming channel structures with reduced sidewall damage in three-dimensional memory devices
    Patent number: 11538825
    Abstract: Methods for forming channel structures in 3D memory devices are disclosed. In one example, a memory film and a sacrificial layer are subsequently formed along a sidewall and a bottom of a channel hole. A protective structure covering a portion of the sacrificial layer along the sidewall of the channel hole is formed. A portion of the sacrificial layer at the bottom of the channel hole that is not covered by the protective structure is selectively removed. A portion of the memory film at the bottom of the channel hole that is not covered by a remainder of the sacrificial layer is selectively removed.
    Type: Grant
    Filed: April 28, 2020
    Date of Patent: December 27, 2022
    Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
    Inventors: Xiaofen Zheng, Hongbin Zhu, Lixun Gu, Hanwei Yi
  • METHODS FOR FORMING CHANNEL STRUCTURES IN THREE-DIMENSIONAL MEMORY DEVICES
    Publication number: 20210335813
    Abstract: Methods for forming channel structures in 3D memory devices are disclosed. In one example, a memory film and a sacrificial layer are subsequently formed along a sidewall and a bottom of a channel hole. A protective structure covering a portion of the sacrificial layer along the sidewall of the channel hole is formed. A portion of the sacrificial layer at the bottom of the channel hole that is not covered by the protective structure is wet etched. A portion of the memory film at the bottom of the channel hole that is not covered by a remainder of the sacrificial layer is wet etched.
    Type: Application
    Filed: July 1, 2021
    Publication date: October 28, 2021
    Inventors: Xiaofen Zheng, Hongbin Zhu, Lixun Gu, Hanwei Yi
  • METHODS FOR FORMING CHANNEL STRUCTURES IN THREE-DIMENSIONAL MEMORY DEVICES
    Publication number: 20210257381
    Abstract: Methods for forming channel structures in 3D memory devices are disclosed. In one example, a memory film and a sacrificial layer are subsequently formed along a sidewall and a bottom of a channel hole. A protective structure covering a portion of the sacrificial layer along the sidewall of the channel hole is formed. A portion of the sacrificial layer at the bottom of the channel hole that is not covered by the protective structure is selectively removed. A portion of the memory film at the bottom of the channel hole that is not covered by a remainder of the sacrificial layer is selectively removed.
    Type: Application
    Filed: April 28, 2020
    Publication date: August 19, 2021
    Inventors: Xiaofen Zheng, Hongbin Zhu, Lixun Gu, Hanwei Yi